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Datasheet: L011 (IXYS Corporation)

Fast Recovery Epitaxial Diode (fred) Module

 

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IXYS Corporation
2000 IXYS All rights reserved
1 - 2
500
150
200
100
9
200
15
0.52
1.06
75
822
75
582
2880
3000
3600
-40...+150
-40...+125
110
115200
117100
93300
94800
4800
5280
4320
4750
150
12.7
9.6
50
2.25-2.75/20-25
4.50-5.50/40-48
300
0.84
1.10
520
1.08
1.25
0.114
0.071
5
4
160
Dimensions in mm (1 mm = 0.0394")
Features
q
International standard package
with DCB ceramic base plate
q
Planar passivated chips
q
Short recovery time
q
Low switching losses
q
Soft recovery behaviour
q
Isolation voltage 3600 V~
q
UL registered E 72873
Applications
q
Antiparallel diode for high frequency
switching devices
q
Free wheeling diode in converters
and motor control circuits
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
1750
911
3 1
V
RSM
V
RRM
Type
V
V
200
200
MEO 550-02DA
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
C
=
C
A
I
FAVM
x
T
C
=
C; rectangular, d = 0.5
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
A
t = 8.3 ms (60 Hz), sine
A
I
2
t
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
A
2
s
t = 8.3 ms (60 Hz), sine
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
A
2
s
t = 8.3 ms (60 Hz), sine
A
2
s
T
VJ
C
T
stg
C
T
Smax
C
P
tot
T
C
= 25
C
W
V
ISOL
50/60 Hz, RMS t = 1 min
V~
I
ISOL
1 mA
t = 1 s
V~
M
d
Mounting torque (M6)
Nm/lb.in.
Terminal connection torque (M6)
Nm/lb.in.
d
S
Creep distance on surface
mm
d
A
Strike distance through air
mm
a
Maximum allowable acceleration
m/s
2
Weight
g
Symbol
Test Conditions
Characteristic Values (per diode)
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
mA
T
VJ
= 25
C
V
R
= 0.8 V
RRM
mA
T
VJ
= 125
C
V
R
= 0.8 V
RRM
mA
V
F
I
F
= A;
T
VJ
= 125
C
V
T
VJ
= 25
C
V
I
F
= A;
T
VJ
= 125
C
V
T
VJ
= 25
C
V
V
T0
For power-loss calculations only
V
r
T
m
W
R
thJH
DC current
K/W
R
thJC
DC current
K/W
t
rr
I
F
= A
T
VJ
= 100
C
ns
I
RM
V
R
= V
T
VJ
= 25
C
A
-di/dt = A/
m
s
T
VJ
= 100
C
A
Fast Recovery
Epitaxial Diode
(FRED) Module
MEO 550-02 DA
V
RRM
= 200 V
I
FAVM
= 582 A
t
rr
= 150 ns
3
1
2000 IXYS All rights reserved
2 - 2
200
600
1000
0
400
800
100
120
140
160
180
200
220
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
20
40
60
0
1
2
3
4
5
6
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
60
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
0
100
200
300
400
500
600
700
800
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
m
C
A/
m
s
A/
m
s
t
rr
ns
t
fr
A/
m
s
s
MEO 550-02
Z
Fig. 7 Transient thermal impedance junction to heatsink
T
VJ
= 100C
V
R
= 100V
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery
charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus
max. voltage drop V
F
per leg
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
V
R
= 100V
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus junction temperature T
VJ
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and t
fr
versus di
F
/dt
T
VJ
=125C
T
VJ
= 25C
I
F
=1100A
I
F
= 550A
I
F
= 275A
I
F
=1100A
I
F
= 550A
I
F
= 275A
I
F
=1100A
I
F
= 550A
I
F
= 275A
Constants for Z
thJS
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.001
0.08
2
0.004
0.024
3
0.027
0.112
4
0.082
0.464
MEO 550-02 DA
T
VJ
= 100C
I
F
= 550A
V
FR
t
fr
thJS
Z
thJH
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