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Datasheet: TLP624 (Isocom Incorporated)

4 Pin, Single

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB92188m-AAS/A1
0.26
20.32
19.32
4.0
3.0
0.5
7.62
13
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13
Max
2.54
10.16
0.26
7.62
3.0
10.16
9.16
4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13
Max
0.5
0.26
2.54
Dimensions in mm
LOW INPUT CURRENT
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
-STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The TLP624, TLP624-2, TLP624-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Current Transfer Ratio ( 50% min)
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
High BV
CEO
( 55Vmin )
l
All electrical parameters 100% tested
l
Low Input Current 0.5mA I
F
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
3.35
5.08
4.08
1
8
TLP624X
TLP624
TLP624-2X
TLP624-2
TLP624-4X
TLP624-4
TLP624X, TLP624-2X, TLP624-4X
TLP624, TLP624-2, TLP624-4
1
2
3
7
8
16
15
10
9
6
11
5
12
14
4
13
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
DB92188m-AAS/A1
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.0
1.15
1.3
V
I
F
= 10mA
Reverse Voltage (V
R
)
5
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 5V
Output
Collector-emitter Breakdown (BV
CEO
)
55
V
I
C
= 0.5mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 24V
Coupled
Current Transfer Ratio (CTR) (Note 2)
TLP624,TLP624-2,TLP624-4
100
1200 %
1mA I
F
, 0.5V V
CE
50
%
0.5mA I
F
, 1.5V V
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
0.4
V
1mA I
F
, 0.5mA I
C
0.2
V
1mA I
F
, 1mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Rise Time
tr
8
s
V
CC
= 10V ,
Fall Time
tf
8
s
I
C
= 2mA, R
L
= 100
Turn-on Time
ton
10
s
Turn-off Time
toff
8
s
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
5V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
55V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
DB92188m-AAS/A1
7/12/00
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Collector-emitter voltage V
CE
( V )
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
0
0.8
1.2
1.6
2.0
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
Forward current I
F
(mA)
Collector Current vs. Low
Collector-emitter Voltage
0 0.2 0.4 0.6 0.8 1.0
Collector current I
C
(mA)
Relative current transfer ratio
Current Transfer Ratio vs. Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
0
40
60
80
100
0
0.5
1.0
I
F
= 0.5mA
I
F
= 1mA
0.4
0.1 0.2 0.5 1 2 5
120
V
CE
= 0.4V
T
A
= 25C
20
I
F
= 1mA
I
C
= 0.5mA
1.5
I
F
= 1mA
V
CE
= 0.4V
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Ambient temperature T
A
( C )
T
A
= 25C
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