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Datasheet: MCT210 (Isocom Incorporated)

6 Pin w/ Base Lead

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91089-AAS/A2
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Power Dissipation
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Collector-base Voltage BV
CBO
30V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
APPROVALS
l
UL recognised, File No. E91231
DESCRIPTION
The MCT210 optically coupled isolator
consists of an infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
DC motor controllers
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
MCT210
1
3
4
6
2
5
Dimensions in mm
3.3
2.54
6.4
6.2
1.54
8.8
8.4
4.3
4.1
0.5
0.5
0.3
7.8
7.4
9.6
8.4
10.16
0.26
OPTION G
5.08
max.
SURFACE MOUNT
OPTION SM
1.2
0.6
1.4
0.9
10.2
9.5
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91089-AAS/A2
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 40mA
Reverse Voltage (V
R
)
6
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( note 2 )
Collector-base Breakdown (BV
CBO
)
30
V
I
C
= 10
A
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
=
100
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR)
50
%
3.2mA I
F
to 32mAI
F
,
0.4V V
CE
150
%
10mA I
F
, 5V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
0.4
V
32mA I
F
, 16mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Rise Time
t
r
4
s
V
CC
= 5V , fig 1
Fall Time
t
f
5
s
I
C
= 2mA, R
L
= 100
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Output
Output
R
L
= 100
Input
10%
90%
90%
10%
t
on
t
r
FIG 1
V
CC
t
off
t
f
DB91089-AAS/A2
7/12/00
50
Ambient temperature T
A
( C )
150
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current I
F
(mA)
70
80
-30 0 25 50 75 100 125
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 5V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Ambient temperature T
A
( C )
-30 0 25 50 75 100
1 2 5 10 20 50
0
1.2
1.6
2.0
2.4
2.8
V
CE
= 0.4V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
0.8
0.4
-30 0 25 50 75 100
Collector-emitter saturation voltage V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.08
0.16
0.24
0.32
0.40
0.48
0.56
I
F
= 32mA
I
C
= 16mA
Ambient temperature T
A
( C )
0
80
120
160
200
240
40
280
320
Forward current I
F
(mA)
Current Transfer Ratio vs. Forward Current
Current transfer ratio CTR (%)
V
CE
= 5V
T
A
= 25C
1 2 5 10 20 50
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