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Datasheet: ISTS832SD (Isocom Incorporated)

Dual Channel, Slotted Interrupter Without Tabs

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
24/9/97
DB92003-AAS/A1
TRANSMISSIVE OPTO-ELECTRONIC DUAL
CHANNEL SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 85C
Operating Temperature
-25C to + 85C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
5V
Power Dissipation
75mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Emitter-collector Voltage BV
ECO
5V
Collector Current I
C
20mA
Power Dissipation
75mW
ISTS150, ISTS832S, ISTS832SD
ISTS250, ISTS822S, ISTS822SD
3.2
DIA 2
PLCS
ISTS250
ISTS822S
ISTS822SD
2.8
OPTICAL
CENTRE
LINE
2.54
0.45
0.40
7.62
E
DESCRIPTION
This series of photointerrupters are dual
channel switches consisting of two Gallium
Arsenide infrared emitting diodes and two NPN
silicon photo transistors mounted in a "side by
side" configuration on opposite sides of a 2.5mm
wide slot. Dual channels enable direction of
travel sensing. The transmissive housing reduces
possible interference from ambient light and
provides dust and dirt protection. In addition the
ISTS822S, ISTS832S have 0.25mm apertures in
front of the phototransistors, While the
ISTS822SD, ISTS832SD have the same sized
apertures in front of both emitters and
phototransistors
FEATURES
l
Single or Double apertures for High Resolution
l
2.5mm Gap between LED and Detector
l
Dual channels "side by side"
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
Players, Cassette Decks, VCR's
ISTS150
ISTS832S
ISTS832SD
OPTICAL
CENTRE
LINE
1
Dimensions in mm
10.4
10.0
11.4
2.54
7.9
7.4
7.62
2.54
2.8
2.8
11.5
E
2.8
0.45
0.40
11.4
7.9
7.4
17.8
11.5
5.4
10.4
10.0
2.54
24.2
1
2
3
4
8
7
6
5
DB92003-AAS/A1
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.6
V
I
F
= 20mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 3V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( Note 1 )
Emitter-collector Breakdown (BV
ECO
)
5
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 10V
Coupled
On-State Collector Current I
C
(
ON
)
( Note 1 )
ISTS150, ISTS250
250
A
20mA I
F
, 10V V
CE
( no apertures )
ISTS822S, ISTS832S
250
A
20mA I
F
, 10V V
CE
(0.25mm apertures phototransistors only)
ISTS822SD, ISTS832SD
100
A
20mA I
F
, 10V V
CE
( 0.25mm apertures in front of both -
- emitters and phototransistors )
Collector-emitter Saturation VoltageV
CE(SAT)
ISTS150, ISTS250
0.4
V
20mA I
F
, 125
A I
C
ISTS822S, ISTS832S
0.4
V
20mA I
F
, 125
A I
C
ISTS822SD, ISTS832SD
0.4
V
20mA I
F
, 50
A I
C
Rise Time
tr
6
s
V
CC
= 5V,
Fall Time
tf
6
s
I
F
= 20mA, R
L
= 100
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
DB92003AAS/A1
24/9/97
25
-25 0 25 50 75 100 125
Ambient temperature T
A
( C )
75
0
100
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-25 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
50
Forward current I
F
(mA)
0
0.5
1.0
1.5
I
F
= 20mA
V
CE
= 10V
Ambient temperature T
A
( C )
-25 0 25 50 75 100
-25 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SA
T
)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
I
F
= 20mA
I
C
= 50
A
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Normalized output current
Normalized Output Current vs.
Forward Current
Forward current I
F
(mA)
0.1 1 10 100
1
10
Normalized output current
Normalized Output Current vs.
Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
0.1
0.01
T
A
= 25C
0.02
0.04
0.2
0.4
2
4
1.6
1.8
2.0
Normalized to
I
F
= 20mA
V
CE
= 10V
Pulsed
PW = 100
s
PRR = 100pps
I
F
= 50mA
30mA
20mA
5mA
10mA
Normalized Output Current
vs. Ambient Temperature
Normalized output current
Normalized to
I
F
= 20mA
V
CE
= 0.4V
Pulsed
PW = 100
s
PRR = 100pps
T
A
= 25C
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