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Datasheet: ISP847X-3 (Isocom Incorporated)

16 Pin, Quad

 

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26/7/99
DB92275A-AAS/A2
0.26
20.32
19.32
4.0
3.0
0.5
7.62
13
Max
7.0
6.0
2.54
1.2
0.5
3.0
1.2
3.0
4.0
3.0
3.35
7.0
6.0
0.5
0.5
7.62
1
2
4
3
0.26
13
Max
2.54
10.16
0.26
7.62
10.2
9.5
ISP817X
ISP817
ISP827X
ISP827
3.0
10.16
9.16
4.0
3.0
3.35
0.5
7.0
6.0
7.62
2
3
4
7
6
5
1.2
13
Max
0.5
0.26
2.54
ISP847X
ISP847
Dimensions in mm
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP817, ISP827, ISP847 series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Current Transfer Ratio (50% min)
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
High BV
CEO
( 35Vmin )
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
3.35
5.08
4.08
1
8
1.2
0.6
1.4
0.9
ISP817X, ISP827X, ISP847X
ISP817, ISP827, ISP847
1
2
3
7
8
16
15
10
9
6
11
5
12
14
4
13
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
DB92275A-AAS/A2
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Reverse Voltage (V
R
)
6
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
35
V
I
C
= 1mA
( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847
50
600
%
5mA I
F
, 5V V
CE
ISP817A,ISP827A,ISP847A
80
160
%
5mA I
F
, 5V V
CE
ISP817B,ISP827B,ISP847B
130
260
%
5mA I
F
, 5V V
CE
ISP817C,ISP827C,ISP847C
200
400
%
5mA I
F
, 5V V
CE
ISP817D,ISP827D,ISP847D
300
600
%
5mA I
F
, 5V V
CE
ISP817GB, ISP827GB, ISP847GB 100
600
%
5mA I
F
, 5V V
CE
ISP817BL, ISP827BL, ISP847BL 200
600
%
5mA I
F
, 5VV
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
0.2
V
20mA I
F
, 1mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
= 2mA, R
L
= 100
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
26/7/99
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 125C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
DB92275A-AAS/A2
26/7/99
50
-30 0 25 50 75 100 125
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage V
CE(SAT)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
100
T
A
= 25C
0
1
2
3
4
5
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
I
F
= 20mA
I
C
= 1mA
Forward current I
F
(mA)
Collector-emitter Saturation
Voltage vs. Forward Current
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage V
CE
( V )
Collector current I
C
(mA)
Current Transfer Ratio vs. Forward Current
Forward current I
F
(mA)
Current transfer ratio CTR (%)
1 2 5 10 20 50
0
80
120
160
200
240
0 2 4 6 8 10
0
10
20
30
40
50
40
T
A
= 25C
280
320
I
F
= 5mA
Forward current I
F
(mA)
Collector-emitter saturation voltage V
CE(SAT)
(V)
Ic
=1mA
3mA
5mA
10mA
15mA
0 5 10 15
6
V
CE
= 5V
T
A
= 25C
10mA
15mA
20mA
30mA
50mA
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