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Datasheet: IS357 (Isocom Incorporated)

Transistor

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
DESCRIPTION
The IS357 is an optically coupled isolator
consisting of an infrared light emitting diode and
NPN silicon photo transistor in a space efficient
dual in line plastic package.
FEATURES
l
Marked as FPT1.
l
Current Transfer Ratio MIN. 50%
l
Isolation Voltage (3.75kV
RMS
,5.3kV
PK
)
l
All electrical parameters 100% tested
l
Drop in replacement for Sharp PC357
APPLICATIONS
l
Computer terminals
l
Industrial systems controllers
l
Measuring instruments
l
Signal transmission between systems of
different potentials and impedances
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
IS357
DB92845l-AAS/A3
22/4/02
Dimensions in mm
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.4
V
I
F
= 20mA
Reverse Voltage (V
R
)
5
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
35
V
I
C
= 0.5mA
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 0.1mA
Collector-emitter Dark Current (I
CEO
)
100
nA
V
CE
= 20V
Coupled
Current Transfer Ratio (CTR)
50
600
%
5mA I
F
, 5V V
CE
Optional CTR Grades: IS357A
80
160
%
5mA I
F
, 5V V
CE
IS357B
130
260
%
5mA I
F
, 5V V
CE
IS357C
200
400
%
5mA I
F
, 5V V
CE
IS357D
300
600
%
5mA I
F
, 5V V
CE
Collector-emitter Saturation VoltageV
CE
(SAT)
0.2
V
20mA I
F
, 1.0mA I
C
Input to Output Isolation Voltage V
ISO
3750
V
RMS
See note 1
5300
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
4
18
s
V
CE
= 2V ,
Output Fall Time
tf
3
18
s
I
C
= 2mA, R
L
= 100
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 125C
Operating Temperature
-30C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
35V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.26mW/C above 25C)
Note 1
Measured with input leads shorted together and output leads shorted together.
DB92845l-AAS/A3
22/4/02
12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TAPING DIMENSIONS










Description
Symbol
Dimensions in mm ( inches )
Tape wide
W
12
0.3 ( .47 )
Pitch of sprocket holes
P
0
4
0.1 ( .15 )
Distance of compartment
F
P
2
5.5
0.1 ( .217 )
2
0.1 ( .079 )
Distance of compartment to compartment
P
1
8
0.1 ( .315 )












12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES


Fig.1 Forword Current
Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
0
-55
Ta= 75 C
50 C
25 C
0 C
-25 C
Ta= 25 C
Pc(MAX.)
5mA
10mA
20mA
vs. Ambient Temperatute
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Collector Power dissipation Pc (mW)
Current transfer ratio CTR (%)
Collector current Ic (mA)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
CE
Ic
=
0.5
mA
1mA
3mA
7mA
5mA
Ta= 25 C
Collecotr-emitter saturation voltage
V (sat) (V)
Voltage
o
o
o
O
o
o
o
o
o
o
125
0
-55
125
25
50
75
100
10
20
30
40
50
60
0
50
100
150
200
0
1
0
0
15
1
2
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
2
5
10
20
50
100
200
500
0
1
0
0
2
5
10
20
50
20
40
60
80
100
120
140
160
180
200
1
2
3
4
5
6
7
8
9
10
30
50
10
5
20
40
25mA
15mA
Collector-emitter voltage V
CE
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
Forward voltage V
F
(V)
Forward current I
F
(mA)
Forward current I
F
(mA)
V
CE
= 5V
Ta= 25 C
I
F
= 30mA
100
75
50
25
0

12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
CHARACTERISTIC CURVES


tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs. Load
Fig.11 Frequency Response
0
CE
vs. Ambient Temperature
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
Response time ( s)
Relative current transfer ratio (%)
Voltage gain Av (dB)
Collector-emitter saturation voltage
V (sat) (V)
o
o
o
o
o
20
40
60
80
100
50
100
150
0
20
40
80
100
0.2
0.05
20
40
60
80
100
0.1 0.2
0.5
1
2
5
10
0.5
1
2
5
10
20
50
100
200
500
0.5
20
10
0
2
10
100
500
Resistance
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.02
0.04
0.06
0.08
0.10
1
5
20
50
60
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
Input
Vcc
ts
Output
Output
tr
Output
Vcc
td
tf
10%
90%
Load resistance R
L
(k )
Collector dark current I
CEO
(nA)
V
CE
= 20V
I
F
= 5mA
V
CE
= 2V
I
F
= 20mA
I
C
= 1mA
V
CE
= 2V
I
C
= 2mA
Ta= 25 C
R
D
R
L
R
D
R
L
R
L
= 10k
1k
100
V
CE
= 2V
I
C
= 2mA
Ta= 25 C
1
10
10000
1000
100

12/07/01 Appendix to Mini Flat Pack FPT-AAS/A1
TEMPERATURE PROFILE OF SOLDERING REFLOW



(1) One time soldering reflow is recommended within the condition of temperature and time profile
shown below.
30 seconds
1 minute
2 minutes
1.5 minutes
1 minute
25 C
180 C
200 C
230 C
(2) When using another soldering method such as infrated ray lamp, the temperature may rise
partially in the mold of the device.
Keep the temperature on the package of the device within the condition of above (1).




















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