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Datasheet: H11F2 (Isocom Incorporated)

6 Pin Dip, Symmetrical Bilateral Photo Detector Output

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91018AAS/A3
APPROVALS
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UL recognised, File No. E91231
DESCRIPTION
The H11F_ series are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The H11F_ series are mounted in a
standard 6pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
As a remote variable resistor
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100
to
300M
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99.9% Linearity
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15 pF Shunt Capacitance
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100G
I/O Isolation Resistance
As an Analog Signal Switch
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Extremely low Offset Voltage
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60V pk-pk Signal Capability
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No Charge Injection or Latchup
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ton, toff
15
s
APPLICATIONS
As a remote variable resistor
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Isolated variable attenuator
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Automatic gain control
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Active filter fine tuning / band switching
H11F1, H11F2, H11F3
Dimensions in mm
2.54
7.0
6.0
8.9
max.
0.5
min.
3.9
3.1
5.1
max.
15
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
1
3
4
6
2
5
APPLICATIONS (cont.)
As an Analog Signal Switch
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Isolated sample and hold circuit
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Multiplexed, optically isolated A/D conversion
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Power Dissipation
100mW
OUTPUT TRANSISTOR
Breakdown Voltage
H11F1, H11F2
30V
H11F3
15V
Detector Current (continuous)
100mA
Power Dissipation
300mW
POWER DISSIPATION
Total Power Dissipation
350mW
PHOTON COUPLED BILATERAL
ANALOG FET
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB91018-AAS/A3
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.1
1.75
V
I
F
= 16mA
Reverse Voltage (V
R
)
5
V
I
R
= 10
A
Reverse Current (I
R
)
10
A
V
R
= 5V
Output
Breakdown Voltage - V(
BR
)
46
(Note 2)
(either
H11F1, H11F2
30
V
I
46
=
10
A,I
F
= 0
polarity)
H11F3
15
V
I
46
=
10
A,I
F
= 0
Off-state Dark Current - I
46
50
nA
V
46
=
15
V, I
F
= 0,
T
A
= 25C
50
A
V
46
=
15
V, I
F
= 0,
T
A
= 100C
Off-state Resistance - r
46
300
V
46
=
15
V, I
F
= 0
Capacitance - C
46
15
pF
V
46
=
0
, I
F
= 0,
f = 1 MHz
Coupled
On-state Resistance - r
46
(Note 2)
H11F1
200
H11F2
330
I
F
= 16mA, I
46
=
100
A
H11F3
470
On-state Resistance - r
64
(Note 2)
H11F1
200
H11F2
330
I
F
= 16mA, I
64
=
100
A
H11F3
470
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
10
11
V
IO
= 500V (note 1)
Input-output Capacitance
Cf
2
pF
V
IO
= 0, f =1MHz
Turn-on Time
ton
25
s
I
F
= 16mA, V
46
= 5V,
Turn-off Time
toff
25
s
R
L
= 50
Resistance, non-linearity and asymmetry
0.1
%
I
F
= 16mA, f = 1kHz
I
46
=
25
A RMS
7/12/00
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
DB91018-AAS/A3
7/12/00
0 50 100 150 200 250 300 350
D.C. bias voltage V
46
(mV)
Change in resistance

r (on)
(%)
Resistive non-linearity vs.
D.C. Bias
-50 -25 0 25 50 75 100
Ambient temperature T
A
( C )
1
Normalized on-state resistance r (on)
On-state Resistance vs. Ambient Temperature
0.6
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage V
F
(V)
Input Current vs. Input Voltage
0.4
1
2
4
10
0
1
2
3
4
5
2
3
10
Normalized dark current
Normalized Off-state current vs.
Ambient Temperature
100
0 25 50 75 100
Ambient temperature T
A
( C )
On-state resistance r (on) (
)
20
4
2
0
10
100 1000 10k 100k
Region of Linear Resistance
Maximum RMS signal voltage V
46
(mV)
40
100
1.0
20
40
100
Forward current I
F
(mA)
Ambient temperature T
A
( C )
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Forward Current vs. Ambient Temperature
Forward current I
F
(mA)
70
80
maximum
RMS voltage
maximum
RMS current
Extrapolated
100
40
20
10
4
2
0
Maximum RMS signal current I
46
(
A)
Normalized to
V
46
= 15V
I
F
= 0
T
A
= 25 C
1000
10000
T
A
= 75C
-25C
25C
I
46
= 10
A RMS
r (on) =
200
Normalized to
I
F
= 16mA
I
46
= 25
A
T
A
= 25 C
observed
range
median
device
0.2
0.1
0.4
0.8
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