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Datasheet: H11D2 (Isocom Incorporated)

High Voltage, 6 Pin

 

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14/2/03
DB91077m-AAS/A2
'X' SPECIFICATION APPROVALS
l
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VDE 0884 in 3 available lead forms : -
- STD
-
G form
-
SMD approved to CECC 00802
DESCRIPTION
The H11D series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CER
( 300V - H11D1, H11D2 )
( 200V - H11D3, H11D4 )
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
H11D1X, H11D2X, H11D3X, H11D4X
H11D1, H11D2, H11D3, H11D4
HIGH VOLTAGE OPTICALLY
COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Power Dissipation
100mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CER
(R
BE
= 1M
)
H11D1, H11D2
300V
H11D3, H11D4
200V
Collector-base Voltage BV
CBO
H11D1, H11D2
300V
H11D3, H11D4
200V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
250mW
(derate linearly 2.67mW/C above 25C)
0.26
0.5
Dimensions in
mm
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
3
4
6
2
5
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CER
)
H11D1, H11D2
300
V
I
C
= 1mA, R
BE
= 1M
H11D3, H11D4
200
V
( note 2 )
Collector-base Breakdown (BV
CBO
)
H11D1, H11D2
300
V
I
C
= 100
A
H11D3, H11D4
200
V
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
=
100
A
Collector-emitter Dark Current (I
CER
)
H11D1, H11D2
100
nA
V
CE
= 200V,R
BE
=1M
250
A
V
CE
= 200V,R
BE
=1M
,
T
A
=100C
H11D3, H11D4
100
nA
V
CE
= 100V,R
BE
=1M
250
A
V
CE
= 100V,R
BE
=1M
,
T
A
=100C
Coupled
Current Transfer Ratio (CTR)
20
%
10mA I
F
, 10V V
CE
,
R
BE
= 1M
Collector-emitter Saturation VoltageV
CE(SAT)
0.4
V
10mA I
F
, 0.5mA I
C
,
R
BE
= 1M
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Turn-on Time
ton
5
s
V
CC
= 10V, I
C
= 2mA,
Turn-off Time
toff
5
s
R
L
= 100
,
fig 1
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
14/2/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Output
Output
R
L
= 100
Input
10%
90%
90%
10%
t
on
t
r
FIG 1
V
CC
t
off
t
f
DB91077m-AAS/A2
14/2/03
100
Ambient temperature T
A
( C )
300
0
400
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
200
Forward current
I
F
(mA)
70
80
-30 0 25 50 75 100 125
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
1 2 5 10 20 50
1.0
10
Relative current transfer ratio
Forward current I
F
(mA)
0.1
0.01
0.8
1.0
-30 0 25 50 75 100
Ambient temperature T
A
( C )
0
100
200
300
400
500
600
700
0.1 0.2 0.5 1 2 5 10 20 50
0.9
1.1
1.3
1.2
1.4
Forward current I
F
(mA)
Forward voltage V
F
(V)
V
CE
= 10V
R
BE
= 1M
T
A
= 25C
Relative Current Transfer Ratio vs.
Forward Current ( normalised to 10mA I
F
)
1.6
1.8
2.0
2.2
2.4
-30 0 25 50 75 100
Ambient temperature T
A
( C )
800
Normalised to V
CE
= 10V ,
I
F
= 10mA , R
BE
= 1M
,
T
A
= 25C
I
F
= 20mA
I
F
= 10mA
I
F
= 5mA
Collector-base current
I
CBO
(
A)
Collector-base Current vs.
Ambient Temperature
Forward Voltage vs. Forward Current
V
CB
= 10V
I
F
= 50mA
V
CB
= 200V
I
F
= 10mA
V
CB
= 10V
I
F
= 5mA
V
CB
= 10V
I
F
= 10mA
T
A
= -55C
T
A
= +25C
T
A
= +100C
DB91077m-AAS/A2
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