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Datasheet: H11C4 (Isocom Incorporated)

6 Pin, Single

 

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
DB92010-AAS/A4
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l
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VDE 0884 in 2 available lead forms : -
- STD
- G form
DESCRIPTION
The H11C_ series are optically coupled isolators
consisting of infrared light emitting diode and a
light activated silicon controlled rectifier in a
standard 6pin dual in line plastic package.
FEATURES
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Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High Surge Anode Current (5.0 A)
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High Blocking Voltage (200V*
1
, 400V*
1
)
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Low Turn on Current (5mA typical)
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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10A, T
2
L compatible, Solid State Relay
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25W Logic Indicator Lamp Driver
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400V Symmetrical transistor coupler
H11C1X, H11C2X, H11C3X, H11C4X, H11C5X, H11C6X
H11C1, H11C2, H11C3, H11C4, H11C5, H11C6
PHOTON COUPLED ISOLATOR Ga As
INFRARED EMITTING DIODE &
LIGHT ACTIVATED SCR
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Forward Current (Peak)
(1
s pulse, 300 pps)
3A
Reverse Voltage
6V
Power Dissipation
100mW
DETECTOR
Peak Forward Voltage
H11C1, H11C2, H11C3
200V*
1
H11C4, H11C5, H11C6
400V*
1
Peak Reverse Gate Voltage
6V
RMS On-state Current
300mA
Peak On-state Current
(100
s, 1% duty cycle)
10A
Surge Current (10ms)
5A
Power Dissipation
300mW
*1 IMPORTANT : A resistor must be connected
between gate and cathode (pins 4 & 6) to prevent false
firing (R
GK
< 56k
)
1
3
4
6
2
5
Dimensions in mm
2.54
7.0
6.0
7.62
max.
0.5
min.
3.9
3.1
5.1
max.
15
Max
0.25
0.48
8.3 max.
OPTION G
8.3 max
SURFACE MOUNT
OPTION SM
10.16
10.2
9.5
0.26
1.2
0.6
1.4
0.9
5/12/00
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92010-AAS/A4
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Voltage (V
R
)
3
V
I
R
= 10
A
Output
Peak Off-state Voltage (V
DM
)
(note 2)
H11C1, H11C2, H11C3
200
V
R
GK
=10k
,
I
D
=
50
A,
T
A
= 100C
H11C4, H11C5, H11C6
400
V
R
GK
=10k
,
I
D
=
150
A,
T
A
=100C
Peak Reverse Voltage (V
RM
)
H11C1, H11C2, H11C3
200
V
R
GK
=10k
,
I
D
=
50
A,
T
A
=100C
H11C4, H11C5, H11C6
400
V
R
GK
=10k
,
I
D
=
150
A,
T
A
=100C
On-state Voltage (V
TM
)
1.1
1.3
V
I
TM
= 300mA
Off-state Current (I
DM
)
H11C1, H11C2, H11C3
50
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=200V, T
A
=100C
H11C4, H11C5, H11C6
150
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=400V, T
A
=100C
Reverse Current (I
R
)
H11C1, H11C2, H11C3
50
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=200V, T
A
=100C
H11C4, H11C5, H11C6
150
A
R
GK
=10k
,
I
F
=
0
,
V
DM
=400V, T
A
=100C
Coupled
Input Current to Trigger ( I
FT
) (note 2)
H11C1, H11C2, H11C4, H11C5
20
mA
V
AK
=50V, R
GK
=10k
H11C3, H11C6
30
mA
V
AK
=50V, R
GK
=10k
H11C1, H11C2, H11C4, H11C5
11
mA
V
AK
=100V, R
GK
=27k
H11C3, H11C6
14
mA
V
AK
=100V, R
GK
=27k
Coupled dv/dt, Input to Output (dv/dt)
500
V/
s
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
10
11
V
IO
= 500V (note 1)
Input-output Capacitance
Cf
2
pF
V = 0, f =1MHz
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
5/12/00
DB92010-AAS/A4
0 0.5 1 1.5 2 2.5 3
Forward voltage V
F
( V )
Input Current to Trigger vs.
Ambient Temperature
1 2 4 6 10 20 40 60 100 200 400 1000
Pulse width (
s )
Forward current I
F
(mA)
Input Characteristics I
F
vs. V
F
Normalized input current to trigger I
FT
0 10 20 30 40 50 60 70 80 90 100
Input current I
F
(mA)
Turn on time t
on
(
s)
Turn on Time vs. Input Current
0.1
0.1
0.2
Anode to cathode voltage V
AK
( V )
Input Current to Trigger vs.
Anode to Cathode Voltage
Normalized input current to trigger I
FT
0.1
0.2
1 5 10 50 100 200
0.4
1.0
2
4
10
20
40
100
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 C
R
GK
=300
10k
27k
56k
1k
R
GK
=300
10k
27k
56k
1k
Normalized to V
AK
= 50V,
R
GK
=10k
,
T
A
= 25 C
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature T
A
( C )
Normalized input current to trigger I
FT
0.1
0.2
0.4
1.0
2
4
10
12
Input Current to Trigger Distribution
vs. Ambient Temperature
Ambient temperature T
A
( C )
-40 -20 0 20 40 60 80 100
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 C
90th percentile
10th percentile
Input Current to Trigger vs.
Pulse Width
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 C
R
GK
=300
1k
10k
27k
56k
Normalized input current to trigger I
FT
0.2
0.4
1
2
4
10
20
40
100
0.1
0.4
1
2
4
10
4
6
8
10
12
14
0
16
18
20
22
24
2
V
AK
= 50V
t
on
= t
d
+ t
r
t
r
= 1
s
R
GK
=1k
10k
56k
0.2
0.4
1
2
4
10
20
40
100
100C
-55C
25C
5/12/00
DB92010-AAS/A4
0 1 2 3 4
On state voltage V
T
( V )
Maximum Transient Thermal Impedence
0 0.2 0.4 0.6 0.8 1.0
On state current (
)
On state current I
T
(A)
On State Characteristics
Normalized forward current off state ( I
D
)
25 50 75 100
Critical rate of rise applied forward voltage dV/dt (V/
s)
dV/dt vs. Ambient temperature
Holding Current vs. Ambient
Temperature
Holding current I
H
(
A)
10
Normalized to
V
AK
= 50V
R
GK
=10k
T
A
= 25 C
R
GK
=300
10k
27k
56k
1k
0.001 0.01 0.1 1 2 4 10 100
Time (seconds)
Transient thermal impedance ( C /
W
att )
Off State Forward Current vs.
Ambient Temperature
Ambient temperature T
A
( C )
0 25 50 75 100
Normalized to
V
AK
= 50V
T
A
= 25 C
On State Current vs. Maximum
Allowable Temperature
Maximum allowable temperature ( C )
10
100
0
1
2
4
10
20
40
100
200
400
2000
1000
4000
10000
-60 -40 -20 0 20 40 60 80 100 120
Ambient temperature T
A
( C )
1. Lead temperature measured at the
widest portion of the SCR anode lead.
2. Ambient temperature measured at
a point 1/2" from the device
.
Junction to lead
Junction to ambient
1
2
4
10
20
40
100
200
400
1000
V
AK
= 400V
V
AK
= 50V
20
40
100
200
400
1000
4000
10000
2000
V
AK
= 200V
1. Ambient temp. half-sine wave avg
2. Ambient temp. DC current
3. Anode lead temp. half-sine wave avg
4. Anode lead temp. DC current
1.
2.
4.
3.
20
30
40
50
60
70
80
90
R
GK
=300
10k
27k
56k
1k
0.1
1
10
40
100
4
0.4
400
1000
Ambient temperature T
A
( C )
Junction temperature =
25C
Junction temperature =
100C
Increases to forward
breakover voltage
0.01
0.02
0.04
0.1
0.2
0.4
1
2
5/12/00
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