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Datasheet: 4N27 (Isocom Incorporated)

6 Pin w/ Base Lead

 

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5/2/03
OPTION G
7.62
0.26
0.5
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
0.5
APPROVALS
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l
Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P01102464
Fimko - Certificate No. FI18166
Semko - Reference No. 0202037/01-22
Demko - Certificate No. 311158-01
l
BSI approved - Cetificate No. 8001
DESCRIPTION
The 4N25, 4N26, 4N27, 4N28 series of optically
coupled isolators consist of infrared light
emitting diode and NPN silicon photo transistor
in a standard 6 pin dual in line plastic package.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l
High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
l
All electrical parameters 100% tested
l
Custom electrical selections available
APPLICATIONS
l
DC motor controllers
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Industrial systems controllers
l
Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
1
3
4
6
2
5
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-55C to + 150C
Operating Temperature
-55C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
60mA
Reverse Voltage
6V
Power Dissipation
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
30V
Collector-base Voltage BV
CBO
70V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/C above 25C)
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
http://www.isocom.com
10.46
9.86
DB91028m-AAS/A4
0.6
0.1
1.25
0.75
4N25X, 4N26X, 4N27X, 4N28X
4N25, 4N26, 4N27, 4N28
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Input
Forward Voltage (V
F
)
1.2
1.5
V
I
F
= 10mA
Reverse Current (I
R
)
10
A
V
R
= 6V
Output
Collector-emitter Breakdown (BV
CEO
)
30
V
I
C
= 1mA
( Note 2 )
Collector-base Breakdown (BV
CBO
)
70
V
I
C
= 100
A
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
=
100
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Collector-base Dark Current (I
CBO
)
20
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR)
4N25, 4N26
20
%
10mA I
F
, 10V V
CE
4N27, 4N28
10
%
10mA I
F
, 10V V
CE
Collector-emitter Saturation VoltageV
CE(SAT)
0.5
V
50mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Turn-on Time
ton
4
s
V
CC
= 10V ,
Turn-off Time
toff
3
s
I
F
= 10mA, R
L
= 100
Output Rise Time
tr
2
s
( FIG 1)
Output Fall Time
tf
2
s
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
5/2/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
Output
Output
R
L
= 100
Input
10%
90%
90%
10%
t
on
t
r
FIG 1
V
CC
t
off
t
f
DB91028m-AAS/A4
5/2/03
50
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current
I
F
(mA)
70
80
-30 0 25 50 75 100 125
-30 0 25 50 75 100
Ambient temperature T
A
( C )
Collector-emitter saturation voltage
V
CE(S
A
T)
(V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
I
F
= 50mA
I
C
= 2mA
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
V
CE
= 10V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)
1 2 5 10 20 50
0
1.2
1.6
2.0
2.4
2.8
V
CE
= 0.5V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)
0.8
0.4
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Ambient temperature T
A
( C )
-30 0 25 50 75 100
DB91028m-AAS/A4
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