MEDIUM POWER THYRISTORS
Stud Version
25RIA SERIES
1
25A
Bulletin I2402 rev. A 07/00
25RIA
10 to 120
140 to 160
I
T(AV)
25
25
A
@ T
C
85
85
°C
I
T(RMS)
40
40
A
I
TSM
@
50Hz
420
398
A
@ 60Hz
440
415
A
I
2
t
@
50Hz
867
795
A
2
s
@ 60Hz
790
725
A
2
s
V
DRM
/V
RRM
100 to 1200
1400 to 1600
V
t
q
typical
110
µs
T
J
 65 to 125
°C
Parameters
Units
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other highreliability requirements
Major Ratings and Characteristics
Case Style
TO208AA (TO48)
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
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25RIA Series
2
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Bulletin I2402 rev. A 07/00
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non
I
DRM
/I
RRM
max.
Type number
Code
peak and offstate voltage (1)
repetitive peak voltage (2)
@ T
J
= T
J
max.
V
V
mA
10
100
150
20
20
200
300
40
400
500
60
600
700
25RIA
80
800
900
10
100
1000
1100
120
1200
1300
140
1400
1500
160
1600
1700
I
T(AV)
Max. average onstate current
25
25
A
180° sinusoidal conduction
@ Case temperature
85
85
°C
I
T(RMS)
Max. RMS onstate current
40
40
A
I
TSM
Max. peak, onecycle
420
398
A
t = 10ms
No voltage
nonrepetitive surge current
440
415
t = 8.3ms
reapplied
350
335
t = 10ms
100% V
RRM
370
350
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
867
795
A
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
790
725
t = 8.3ms
reapplied
615
560
t = 10ms
100% V
RRM
560
510
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
8670
7950
A
2
s
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
0.99
0.99
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
voltage
V
T(TO)
2
High level value of threshold
1.40
1.15
(I >
x I
T(AV)
),T
J
= T
J
max.
voltage
r
t1
Low level value of onstate
10.1
11.73
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
slope resistance
r
t2
High level value of onstate
5.7
10.05
(I >
x I
T(AV)
),T
J
= T
J
max.
slope resistance
V
TM
Max. onstate voltage
1.70

V
I
pk
= 79 A, T
J
= 25°C

1.80
I
H
Maximum holding current
130
mA
T
J
= 25°C. Anode supply 6V, resistive load,
I
L
Latching current
200
25RIA
10 to 120
140 to 160
Parameter
Units
Conditions
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Onstate Conduction
(1)
Units may be broken over nonrepetitively in the offstate direction without damage, if dI/dt does not exceed 20A/µs
(2)
For voltage pulses with t
p
5ms
25RIA Series
3
www.irf.com
Bulletin I2402 rev. A 07/00
dv/dt
Max. critical rate of rise of
100
T
J
= T
J
max. linear to 100% rated V
DRM
offstate voltage
300 (*)
T
J
= T
J
max. linear to 67% rated V
DRM
V/µs
Parameter
25RIA
Units Conditions
Blocking
P
GM
Maximum peak gate power
8.0
T
J
= T
J
max.
P
G(AV)
Maximum average gate power
2.0
I
GM
Max. peak positive gate current
1.5
A
T
J
= T
J
max.
V
GM
Maximum peak negative
10
V
T
J
= T
J
max.
gate voltage
I
GT
DC gate current required
90
T
J
=  65°C
to trigger
60
mA
T
J
= 25°C
35
T
J
= 125°C
V
GT
DC gate voltage required
3.0
T
J
=  65°C
to trigger
2.0
V
T
J
= 25°C
1.0
V
T
J
= 125°C
I
GD
DC gate current not to trigger
2.0
mA
T
J
= T
J
max., V
DRM
= rated value
V
GD
DC gate voltage not to trigger
0.2
V
T
J
= T
J
max.
V
DRM
= rated value
W
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anodeto
cathode applied
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anodetocathode applied
Parameter
25RIA
Units Conditions
Triggering
di/dt
Max. rate of rise of turnedon
T
J
= T
J
max., V
DM
= rated V
DRM
current
V
DRM
600V
200
A/µs
Gate pulse = 20V, 15
, t
p
= 6µs, t
r
= 0.1µs max.
V
DRM
800V
180
I
TM
= (2x rated di/dt) A
V
DRM
1000V
160
V
DRM
1600V
150
t
gt
Typical turnon time
0.9
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
t
rr
Typical reverse recovery time
4
µs
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = 10A/µs
t
q
Typical turnoff time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs,
V
R
= 100V,
di/dt = 10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V100W
Parameter
25RIA
Units Conditions
Switching
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
25RIA Series
4
www.irf.com
Bulletin I2402 rev. A 07/00
R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
180°
0.17
0.13
K/W
T
J
= T
J
max.
120°
0.21
0.22
90°
0.27
0.30
60°
0.40
0.42
30°
0.69
0.70
Conduction angle
Sinusoidal conduction Rectangular conduction Units
Conditions
Ordering Information Table
1
25
RIA 160
M
S90
Device Code
4
3
2
1

Current code
2

Essential part number
3

Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
4

None = Stud base TO208AA (TO48) 1/4" 28UNF2A
M
= Stud base TO208AA (TO48) M6 X 1
5

Critical dv/dt: None = 300V/µs (Standard value)
S90 = 1000V/µs (Special selection)
5
T
J
Max. operating temperature range
 65 to 125
° C
T
stg
Max. storage temperature range
 65 to 125
° C
R
thJC
Max. thermal resistance,
0.75
K/W
DC operation
junction to case
R
thCS
Max. thermal resistance,
0.35
K/W
Mounting surface, smooth, flat and greased
case to heatsink
T
Mounting torque
to nut
to device
20(27.5)
25
lbfin
Lubricated threads
0.23(0.32)
0.29
kgf.m
(Nonlubricated threads)
2.3(3.1)
2.8
Nm
Case style
TO208AA (TO48)
See Outline Table
Parameter
25RIA
Units Conditions
Thermal and Mechanical Specification
wt
Approximate weight
14 (0.49)
g (oz)
25RIA Series
5
www.irf.com
Bulletin I2402 rev. A 07/00
Outline Table
Fig. 1  Current Ratings Characteristic
80
90
100
110
120
130
0
5
10
15
20
25
30
30°
60°
90°
120°
180°
Average Onstate Current (A)
M
a
xi
m
u
m
A
l
l
o
w
a
b
l
e C
a
se T
e
m
p
er
a
t
ur
e
(
°
C
)
Conduction Angle
25RIA Series (100 to 1200V)
R (DC) = 0.75 K/W
thJC
80
90
100
110
120
130
0
10
20
30
40
DC
30°
60°
90°
120°
180°
Average Onstate Current (A)
Ma
x
i
m
u
m A
l
l
o
w
a
b
l
e
Ca
s
e
T
e
m
p
e
r
a
t
u
r
e
(
°
C
)
Conduction Period
25RIA Series (100 to 1200V)
R (DC) = 0.75 K/W
thJC
Fig. 2  Current Ratings Characteristic
Case Style TO208AA (TO48)
All dimensions in millimeters (inches)