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Datasheet: 10MQ040 (International Rectifier)

Schottky Rectifier

 

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International Rectifier
SCHOTTKY RECTIFIER
2.1 Amp
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
1
Major Ratings and Characteristics
I
F
DC
2.1
A
V
RRM
40
V
I
FSM
@ tp = 5 s sine
120
A
V
F
@
1.5Apk, T
J
=125C
0.56
V
T
J
range
- 55 to 150
C
Characteristics
Value
Units
The 10MQ040NPbF surface mount Schottky rectifier has been
designed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Description/ Features
www.irf.com
Case Styles
10MQ040NPbF
SMA
I
F(AV)
= 2.1Amp
V
R
= 40V
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
2
www.irf.com
V
FM
Max. Forward Voltage Drop (1)
0.54
V
@ 1A
* See Fig. 1
0.62
V
@ 1.5A
0.49
V
@ 1A
0.56
V
@ 1.5A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J
= 25 C
* See Fig. 2
26
mA
T
J
= 125 C
V
F(TO)
Threshold Voltage
0.36
V
T
J
= T
J
max.
r
t
Forward Slope Resistance
104
m
C
T
Typical Junction Capacitance
38
pF
V
R
= 10V
DC
, T
J
= 25C, test signal = 1Mhz
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
10000
V/s
(Rated V
R
)
Part number
10MQ040NPbF
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
40
Voltage Ratings
Absolute Maximum Ratings
T
J
= 25 C
T
J
= 125 C
V
R
= rated V
R
Electrical Specifications
Parameters
10MQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range (*) - 55 to 150
C
T
stg
Max. Storage Temperature Range
- 55 to 150
C
R
thJA
Max. Thermal Resistance Junction
80
C/W DC operation
to Ambient
wt
Approximate Weight
0.07(0.002) g (oz.)
Case Style
SMA
Similar D-64
Device Marking
IR1F
Thermal-Mechanical Specifications
Parameters
10MQ Units
Conditions
I
F(AV)
Max. Average Forward Current
1.5
A
50% duty cycle @ T
L
= 123 C, rectangular wave form.
* See Fig. 4
On PC board 9mm
2
island(.013mm thick copper pad area)
I
FSM
Max. Peak One Cycle Non-Repetitive
120
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 6
30
10ms Sine or 6ms Rect. pulse
E
AS
Non-Repetitive Avalanche Energy
3.0
mJ
T
J
= 25 C, I
AS
= 1A, L = 6mH
I
AR
Repetitive Avalanche Current
1.0
A
Parameters
10MQ Units
Conditions
A
Following any rated
load condition and
with rated V
RRM
applied
<
thermal runaway condition for a diode on its own heatsink
(*) dPtot
1
dTj
Rth( j-a)
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0
5
10
15
20
25
30
35
40
R
R
125C
100C
75C
50C
25C
R
e
v
e
r
s
e C
u
r
r
en
t -
I
(
m
A
)
T = 150C
J
Reverse Voltage - V (V)
10
100
0
5
10
15
20
25
30
35
40
T = 25C
J
R
T
J
u
n
c
ti
on
C
a
p
a
c
i
t
a
nc
e -
C
(
p
F
)
Reverse Voltage - V (V)
0.1
1
10
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj = 150C
Tj = 125C
Tj = 25C
Forward Voltage Drop - V
FM
(V)
Instantaneous Forward Curent - I
F
(A)
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
10
100
10
100
1000
10000
FS
M
No
n
-
R
e
p
e
t
i
t
i
v
e
S
u
r
g
e
C
u
r
r
e
n
t
-
I
(
A
)
p
Square Wave Pulse Duration - t (microsec)
At Any Rated Load Condition
And With Rated V Applied
Following Surge
RRM
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.4
0.8
1.2
1.6
2
2.4
DC
A
v
e
r
a
g
e
P
o
w
e
r
L
o
s
s
-
(W
a
t
t
s
)
F(AV)
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forward Current - I (A)
70
80
90
100
110
120
130
140
150
0
0.4
0.8
1.2
1.6
2
2.4
DC
A
l
l
o
wa
b
l
e
Ca
s
e

T
e
m
p
e
r
a
t
u
r
e -
(
C)
F(AV)
see note (2)
Square wave (D = 0.50)
80% Rated V applied
R
Average Forward Current - I (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10MQ040NPbF
Bulletin PD-20772 rev. A 07/04
5
www.irf.com
IR LOGO
PYWWX
2nd digit of the YEAR
SITE ID
WEEK
IR1F
CURRENT
VOLTAGE
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
5.53 (.218)
1.27 MIN.
(.050 MIN.)
1.47 MIN.
(.058 MIN.)
SOLDERING PAD
C A T H O D E
AN ODE
1
2
1
2
P O LA RI TY
PA RT NU MB ER
Device Marking: IR1F
Dimensions in millimeters and (inches)
Outline SMA
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
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