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Datasheet: 10ETS16FP (International Rectifier)

1600V 10A Std. Recovery Diode inA TO-220AC Full-pak (2-Pin)package

 

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International Rectifier
INPUT RECTIFIER DIODE
TO-220 FULLPAK
1
Preliminary Data Sheet I2142 rev. A 03/99
SAFE
IR
Series
10ETS..FP
V
F
< 1.1V @ 10A
I
FSM
= 200A
V
RRM
800 to 1600V
Major Ratings and Characteristics
Characteristics
10ETS..FP Units
I
F(AV)
Sinusoidal waveform
10
A
V
RRM
800 to 1600
V
I
FSM
200
A
V
F
@
10 A, T
J
= 25C
1.1
V
T
J
- 40 to 150
C
TO-220AC FULLPAK
Description/Features
The 10ETS..FP rectifier
SAFE
IR
series has
been optimized for very low forward voltage
drop, with moderate leakage. The glass
passivation technology used has reliable
operation up to 150C junction temperature.
Typical applications are in input rectification
and these products are designed to be used
with International Rectifier Switches and
Output Rectifiers which are available in
identical package outlines. Fully isolated
package (V
INS
= 2500 V
RMS
).
UL E78996 approved
Capacitive input filter T
A
= 55C, T
J
= 125C
12.0
16.0
A
common heatsink of 1C/ W
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge
Units
Package Outline
www.irf.com
2
10ETS..FP
SAFE
IR
Series
Preliminary Data Sheet I2142 rev. A 03/99
www.irf.com
I
F(AV)
Max. Average Forward Current
10
A
@ T
C
= 105 C, 180 conduction half sine wave
I
FSM
Max. Peak One Cycle Non-Repetitive
170
10ms Sine pulse, rated V
RRM
applied
Surge Current
200
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
130
10ms Sine pulse, rated V
RRM
applied
145
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
1450
A
2
s
t = 0.1 to 10ms, no voltage reapplied
Part Number
V
RRM
, maximum
V
RSM
, maximum non repetitive
I
R R M
peak reverse voltage
peak reverse voltage
150C
V
V
mA
10ETS08FP
800
900
0.5
10ETS12FP
1200
1300
10ETS16FP
1600
1700
Voltage Ratings
T
J
Max. Junction Temperature Range
- 40 to 150
C
T
s t g
Max. Storage Temperature Range
- 40 to 150
C
R
thJC
Max. Thermal Resistance Junction
2.5
C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
62
C/W
to Ambient
R
thCS
Typical Thermal Resistance, Case to
0.5
C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Case Style
TO-220 FULLPAK
(94/V0)
Thermal-Mechanical Specifications
Parameters
10ETS..FP Units
Conditions
Kg-cm
(Ibf-in)
Absolute Maximum Ratings
Electrical Specifications
Parameters
10ETS..FP Units
Conditions
A
A
2
s
V
FM
Max. Forward Voltage Drop
1.1
V
@ 10A, T
J
= 25C
r
t
Forward slope resistance
20
m
V
F(TO)
Threshold voltage
0.82
V
I
RM
Max. Reverse Leakage Current
0.05
T
J
= 25 C
0.50
T
J
= 150 C
Parameters
10ETS..FP Units
Conditions
T
J
= 150C
V
R
= rated V
RRM
mA
Provide terminal coating for voltages above 1200V
3
10ETS..FP
SAFE
IR
Series
Preliminary Data Sheet I2142 rev. A 03/99
www.irf.com
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - Forward Power Loss Characteristics
Fig. 4 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
80
90
100
110
120
130
140
150
0
2
4
6
8
10
12
30
60
90
120
180
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e

C
a
s
e
T
e
mp
e
r
a
t
u
r
e
(
C
)
Conduction Angle
Average Forward Current (A)
10ETS.. Series
R (DC) = 2.5 C/W
thJC
90
100
110
120
130
140
150
0
2
4
6
8
10
12
14
16
18
DC
30
60
90
120
180
M
a
x
i
m
u
m
A
l
l
o
w
a
b
l
e

C
a
s
e
Te
m
p
er
a
t
u
r
e
(
C
)
Conduction Period
Average Forward Current (A)
10ET S.. Series
R (DC) = 2.5 C/W
thJC
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
RMS Limit
180
120
90
60
30
Conduction Angle
Average Forward Current (A)
M
a
x
i
m
u
m

A
v
er
a
g
e
F
o
r
w
a
r
d
P
o
w
e
r
L
o
s
s
(
W
)
10ETS.. Series
T = 150C
J
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
DC
180
120
90
60
30
RMS Limit
Conduction Period
Average Forward Current (A)
M
a
x
i
m
u
m
A
v
er
a
g
e
F
o
r
w
a
r
d
P
o
w
e
r

L
o
s
s
(
W
)
10ET S.. Series
T = 150C
J
40
60
80
100
120
140
160
180
200
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
P
e
ak
Hal
f S
i
n
e
W
a
v
e

F
o
r
w
ar
d
C
u
r
r
e
n
t

(
A
)
Initial T = 150C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
10ETS.. Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
40
60
80
100
120
140
160
180
200
220
240
0.01
0.1
1
Pulse Train Duration (s)
P
e
ak
Hal
f S
i
ne
W
a
v
e
F
o
r
w
ar
d C
u
r
r
e
n
t
(
A
)
10ETS.. Serie s
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
Initial T = 150 C
No Voltage Reapplied
Rated V Reapplied
RRM
J
4
10ETS..FP
SAFE
IR
Series
Preliminary Data Sheet I2142 rev. A 03/99
www.irf.com
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
Fig. 8 - Forward Voltage Drop Characteristics
1
10
100
0
0.5
1
1.5
2
2.5
3
T = 25C
J
In
s
t
a
n
t
a
n
e
o
u
s
F
o
rw
a
r
d
C
u
rre
n
t

(
A
)
Instantaneous Forward Voltage (V)
T = 150C
J
10ETS.. Series
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady State Value
(DC Operation)
10ETS.. Series
Single Pulse
th
J
C
T
r
a
n
s
i
e
n
t
T
h
er
m
a
l I
m
p
e
d
a
n
c
e
Z

(
C
/
W
)
5
10ETS..FP
SAFE
IR
Series
Preliminary Data Sheet I2142 rev. A 03/99
www.irf.com
Outline Table
5 0.5
3
.1
3
.3
1
3
.5
1
3
.7
R0.5
R0.7 (2 PLACES)
3.1
HOLE 3.4
10.4
0.7
4
.6
TYP.
5 0.5
4
.8
0.9
2.54 TYP.
2.54
10.6
1
6
.4
1
6
.0
3
.7
7
.1
0.48
2.85
2.8
1.4
1.15
1
5
.4
3
.2
6
.7
1
5
.8
1.05
1.3
0.44
2.65
2.6
TYP
10
Dimensions in millimeters
10
E
T
S
16
FP
Device Code
1
5
2
4
3
Ordering Information Table
1
-
Current Rating
2
-
Circuit Configuration:
E = Single Diode
3
-
Package:
T = TO-220AC
4
-
Type of Silicon:
S = Standard Recovery Rectifier
5
-
Voltage code: Code x 100 = V
RRM
6
-
TO-220 FULLPAK
08 = 800V
12 = 1200V
16 = 1600V
1
CATHODE
ANODE
3
2
6
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