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Datasheet: 10BQ100TR (International Rectifier)

100V 1A Schottky Discrete Diode inA SMB Package

 

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International Rectifier
SCHOTTKY RECTIFIER
1 Amp
10BQ100
Bulletin PD-2.437 rev. F 03/03
1
www.irf.com
Major Ratings and Characteristics
I
F(AV)
Rectangular waveform
1.0
A
V
RRM
100
V
I
FSM
@ tp = 5 s sine
780
A
V
F
@
1.0 Apk, T
J
=125C
0.62
V
T
J
range
- 55 to 175
C
Characteristics
10BQ100
Units
The 10BQ100 surface-mount Schottky rectifier has been
designed for applications requiring low forward drop and very
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Description/ Features
SMB
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
3.80 (.150)
3.30 (.130)
4.70 (.185)
4.10 (.161)
2.15 (.085)
1.80 (.071)
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
4.0 (.157)
2.0 TYP.
(.079 TYP.)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
CATHODE
ANODE
1
2
1
2
POLARITY
PART NUMBER
4.2 (.165)
Device Marking: IR1J
10BQ100
Bulletin PD-2.497 rev. F 03/03
2
www.irf.com
Part number
10BQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
100
Voltage Ratings
V
FM
Max. Forward Voltage Drop (1)
0.78
V
@ 1A
* See Fig. 1
0.89
V
@ 2A
0.62
V
@ 1A
0.72
V
@ 2A
I
RM
Max. Reverse Leakage Current (1)
0.5
mA
T
J
= 25 C
* See Fig. 2
1
mA
T
J
= 125 C
C
T
Typical Junction Capacitance
42
pF
V
R
= 5V
DC
, (test signal range 100kHz to 1MHz) 25C
L
S
Typical Series Inductance
2.0
nH
Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge
10000
V/ s
(Rated V
R
)
T
J
= 25 C
T
J
= 125 C
V
R
= rated V
R
Electrical Specifications
Parameters
10BQ Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
I
F(AV)
Max. Average Forward Current
1.0
A
50% duty cycle @ T
L
= 152 C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive
780
A
5s Sine or 3s Rect. pulse
Surge Current
38
10ms Sine or 6ms Rect. pulse
E
AS
Non- Repetitive Avalanche Energy
1.0
mJ
T
J
= 25 C, I
AS
= 0.5A, L = 8mH
I
AR
Repetitive Avalanche Current
0.5
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters
10BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
T
J
Max. Junction Temperature Range (*) - 55 to 175
C
T
stg
Max. Storage Temperature Range
- 55 to 175
C
R
thJL
Max. Thermal Resistance Junction
36
C/W DC operation
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
80
C/W
to Ambient
wt
Approximate Weight
0.10 (0.003) g (oz.)
Case Style
SMB
Similar DO-214AA
Device Marking
IR1J
Thermal-Mechanical Specifications
Parameters
10BQ
Units
Conditions
<
thermal runaway condition for a diode on its own heatsink
(**) Mounted 1 inch square PCB
(*) dPtot
1
dTj
Rth( j-a)
10BQ100
Bulletin PD-2.497 rev. F 03/03
3
www.irf.com
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Instantaneous Forward Current - I
F
(A)
Forward Voltage Drop - V
FM
(V)
Reverse Current - I
R
(mA)
Reverse Voltage - V
R
(V)
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(p F)
0.1
1
10
0.2
0.4
0.6
0.8
1
Tj = 175C
Tj = 125C
Tj = 25C
.00001
0.0001
0.001
0.01
0.1
1
10
0
20
40
60
80
100
75C
25C
Tj = 175C
150C
125C
100C
50C
10
100
0
20
40
60
80
100
T = 25C
J
Thermal Impedance Z
thJC
(C/W)
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics (Per Leg)
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Single Pulse
(Thermal Resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
.
2. Peak Tj = Pdm x ZthJC + Tc
.
10BQ100
Bulletin PD-2.497 rev. F 03/03
4
www.irf.com
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
Average Forward Current - I
F(AV)
(A)
Allowable Lead Temperature (C)
Average Forward Current - I
F(AV)
(A)
Average Power Loss (Watts)
Square Wave Pulse Duration - T
p
(Microsec)
Non-Repetitive Surge Current - I
FSM
(A)
10
100
1000
10
100
1000
10000
At Any Rated Load Condition
And With rated Vrrm Applied
Following Surge
0
0.2
0.4
0.6
0.8
1
0
0.3
0.6
0.9
1.2
1.5
DC
RMS Limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
110
120
130
140
150
160
170
180
0
0.4
0.8
1.2
1.6
DC
Square wave (D = 0.50)
Rated Vr applied
see note (2)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
10BQ100
Bulletin PD-2.497 rev. F 03/03
5
www.irf.com
IR LOGO
YEAR
CURRENT
IR1J
VOLTAGE
YYWWX
WEEK
SITE ID
Tape & Reel Information
Marking & Identification
Ordering Information
10BQ SERIES - TAPE AND REEL
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 3000
PIECES).
EXAMPLE:
10BQ100TR - 6000 PIECES
10BQ SERIES - BULK QUANTITIES
WHEN ORDERING, INDICATE THE PART NUMBER
AND THE QUANTITY ( IN MULTIPLES OF 1000
PIECES).
EXAMPLE:
10BQ100 - 2000 PIECES
Dimensions in millimetres and (inches)
16 (0.63)
FEED DIRECTION
8 (0.32)
16 (0.63)
330 (13)
Each device has 2 rows for identification. The first row
designates the device as manufactured by International
Rectifier as indicated by the letters "IR", and the Part
Number (indicates the current and the voltage rating).
The second row indicates the year, the week of
manufacturing and the Site ID.
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