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Datasheet: 100V (International Rectifier)

SCHOTTKY RECTIFIER

 

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International Rectifier
SCHOTTKY RECTIFIER
30A, 100V
22GQ100
Major Ratings and Characteristics
Description/Features
02/22/02
CASE STYLE
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1
Characteristics
22GQ100
Units
II
F(AV)
Rectangular
30
A
waveform
V
RRM
100
V
I
FSM
@ tp = 8.3ms half-sine
400
A
V
F
@ 30Apk, T
J
=125C
0.90
V
T
J
, T
stg
Operating and storage
-55 to 150
C
1
2
3
HIGH EFFICIENCY SERIES
IR Case Style TO-254AA
6.60 [.260]
6.32 [.249]
1.27 [.050]
1.02 [.040]
0.12 [.005]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.81 [.150]
2X
17.40 [.685]
16.89 [.665]
A
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
B
20.32 [.800]
20.07 [.790]
3.78 [.149]
3.53 [.139]
1
2
3
17.40 [.685]
16.89 [.665]
3.81 [.150]
0.84 [.033]
MAX.
C
NOT ES :
1. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994.
2. AL L DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
3. CONT ROL LING DIMENS ION: INCH.
4. CONF ORMS T O JEDE C OUT LINE T O-254AA.
PD -20353D
(ISOLATED BASE)
CATHODE
ANODE
The 22GQ100 Schottky rectifier has been expressly
designed to meet the rigorous requirements of hi-rel
environments. It is packaged in the hermetic isolated
TO-254AA package. The device's forward voltage drop
and reverse leakage current are optimized for the lowest
power loss and the highest circuit efficiency for typical high
frequency switching power supplies and resonent power
converters. Full MIL-PRF-19500 quality conformance
testing is available on source controlled drawings to TX,
TXV and S levels.
Hermetically Sealed
High Frequency Operation
Guard Ring for Enhanced Ruggedness and Long
Term Reliability
Schottky Diodes Connected in Series
Electrically Isolated
22GQ100
2
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Part number
22GQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
100
Parameters
Limits Units
Conditions
I
F(AV)
Max. Average Forward Current
30
A
50% duty cycle @ T
C
= 100C, rectangular waveform
See Fig. 5
I
FSM
Max. Peak One Cycle Non - Repetitive
400
A
@ t
p
= 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Q Pulse Width < 300s, Duty Cycle < 2%
Parameters
Limits
Units
Conditions
T
J
Max.Junction Temperature Range
-55 to 150
C
T
stg
Max. Storage Temperature Range
-55 to 150
C
R
thJC
Max. Thermal Resistance, Junction
1.0
C/W
DC operation
See Fig. 4
to Case
wt
Weight (Typical)
9.3 g
Die Size
200X200 mils
Case Style
TO-254AA
Thermal-Mechanical Specifications
Parameters
Limits
Units
Conditions
V
FM
Max. Forward Voltage Drop
1.1
V
@ 20A
See Fig. 1
Q
1.6
V
@ 35A
0.9
V
@ 20A
1.3
V
@ 35A
I
RM
Max. Reverse Leakage Current
0.8
mA
T
J
= 25C
V
R
= rated V
R
See Fig. 2
Q
45
mA
T
J
= 125C
C
T
Max. Junction Capacitance
1400
pF
V
R
= 5V
DC
( 1MHz, 25C )
L
S
Typical Series Inductance
7.8
nH
Measured from anode lead to cathode lead
6mm ( 0.025 in.) from package
Electrical Specifications
T
J
= 25C
T
J
=1 25C
22GQ100
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3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0.0001
0.001
0.01
0.1
1
10
100
0
20
40
60
80
100
R
A
T = 1 5 0C
12 5 C
10 0 C
2 5C
J
R ev e rse V o lta g e - V (V )
22GQ100
4
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
22GQ100
R
thJC
(DC) = 1.0C/W
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