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Datasheet: J232 (InterFET Corporation)

N-channel Silicon Junction Field-effect Transistor

 

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InterFET Corporation
01/99
B-59
J232
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
40 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/C
TO226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ232
At 25C free air temperature:
J232
Process NJ16
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
40
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
250
pA
V
GS
= 30V, V
DS
= V
Gate Operating Current
I
G
2
pA
V
DS
= 20V, I
D
= V
Gate Source Cutoff Voltage
V
GS(OFF)
3
6
V
V
DS
= 20V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
5
10
mA
V
DS
= 20V, V
GS
= V
Dynamic Electrical Characteristics
Common Source Forward Transconductance
g
fs
2500
5000
S
V
DS
= 20V, V
GS
= V
f = 1 kHz
Common Source Output Conductance
g
os
5
S
V
DS
= 20V, V
GS
= V
f = 1 kHz
Common Source Input Capacitance
C
iss
4
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Common Source Reverse Transfer
C
rss
1
pF
V
DS
= 20V, V
GS
= V
f = 1 MHz
Capacitance
Equivalent Short Circuit
e
N
20
30
nV/
Hz
V
DS
= 10V, V
GS
= V
f = 10 Hz
Input Noise Voltage
6
nV/
Hz
V
DS
= 10V, V
GS
= V
f = 1 kHz
Audio Amplifier
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-59
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