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Datasheet: J110A (InterFET Corporation)

N-channel Silicon Junction Field-effect Transistor

 

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InterFET Corporation
B-50
01/99
J110, J110A
N-Channel Silicon Junction Field-Effect Transistor
Choppers
Commutators
Analog Switches
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
25 V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
360 mW
Power Derating
3.27 mW/C
TO226AA Package
Dimensions in Inches (mm)
Pin Configuration
1 Drain, 2 Source, 3 Gate
Surface Mount
SMPJ110, SMPJ110A
At 25C free air temperature:
J110
J110A
Process NJ450
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
25
25
V
I
G
= 1 A, V
DS
= V
Gate Reverse Current
I
GSS
3
3
nA
V
GS
= 15V, V
DS
= V
Gate Source Cutoff Voltage
V
GS(OFF)
0.5
4
0.5
4
V
V
DS
= 5V, I
D
= 1 A
Drain Saturation Current (Pulsed)
I
DSS
10
10
mA
V
DS
= 15V, V
GS
= V
Drain Cutoff Current
I
D(OFF)
3
3
nA
V
DS
= 5V, V
GS
= 10V
Dynamic Electrical Characteristics
Drain Source ON Resistance
r
ds(on)
18
25
V
GS
= , V
DS
< = 0.1V
f = 1 kHz
Drain Gate Capacitance
C
gd
15
15
pF
V
DS
= V, V
GS
= 10V
f = 1 MHz
Source Gate Capacitance
C
gs
15
15
pF
V
DS
= V, V
GS
= 10V
f = 1 MHz
Drain Gate + Source Gate Capacitance
C
gd
+ C
gs
85
85
pF
V
DS
= V
GS
= V
f = 1 MHz
Switching Characteristics
Typ
Typ
Turn ON Delay Time
td
(on)
4
4
ns
J110
J110A
Rise Time
t
r
1
1
ns
V
DD
1.5
1.5
V
Turn OFF Delay Time
td
(off)
6
6
ns
V
GS(OFF)
5
5
V
Fall Time
t
f
30
30
ns
R
L
150
150
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Databook.fxp 1/13/99 2:09 PM Page B-50
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