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Datasheet: H2N7000 (Hi-Sincerity Mocroelectronics)

N-channel Enhancement Mode Transistor

 

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Hi-Sincerity Mocroelectronics
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 1/4
H2N7000
HSMC Product Specification
H2N7000
N-CHANNEL ENHANCEMENT MODE TRANSISTOR
Description
The H2N7000 is designed for high voltage, high speed applications
such as switching regulators, converters, solenoid and relay drivers.
Absolute Maximum Ratings
·
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
°
C
Junction Temperature ................................................................................... +150
°
C Maximum
·
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) ............................................................................... 400 mW
·
Maximum Voltages and Currents (Ta=25
°
C)
BVDSS Drain to Source Voltage......................................................................................... 60 V
BVGSS Gate to Source Voltage ......................................................................................... 40 V
ID Drain Current............................................................................................................. 200 mA
Characteristics
(Ta=25
°
C)
Symbol
Min.
Max.
Unit
Test Conditions
VDSS
60
-
V
ID=10uA, VGS=0
IDSS
-
1
uA
VDS=48V
±
IGSS
-
±
10
nA
VGS=
±
15V
VGS(th)
0.8
3
V
VDS=3V, ID=1mA
ID(on)
75
-
mA
VGS=4.5V, VDS=10V
RDS(on)
-
5
VGS=10V, ID=0.5A
VDSS(on)1
-
2.5
V
VGS=10V, ID=0.5A
VDSS(on)2
-
0.4
v
VGS=4.5V, ID=75mA
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 2/4
H2N7000
HSMC Product Specification
Characteristics Curve
On-Region Characteristic
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
2
4
6
8
10
VDS, Drain-Source Voltage (V)
I
D
D
r
a
i
n-
S
o
ur
c
e
C
u
r
r
e
n
t
(
A
)
VGS=10V
8V
5V
6V
7V
4V
Drain Current Variation with Gate Voltage
& Temperature
0.0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
VGS, Gate-Source Voltage (V)
I
D
D
r
a
i
n-
S
o
ur
c
e
C
u
r
r
e
n
t
(
A
)
Tj=150șC
Tj=25șC
Tj=-55șC
VDS=10V
Transconductance Variation with Drain Current
& Temperature
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.0
0.2
0.4
0.6
0.8
1.0
ID, Drain-Source Current (A)
gFS
,
T
r
an
s
c
o
n
d
u
c
t
a
n
c
e(
S
)
Tj=25șC
Tj=150șC
Tj=-55șC
Capacitance Characteristics
0
10
20
30
40
50
60
70
0
10
20
30
40
50
VDS, Drain-Source Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Ciss
Crss
Coss
VGS=10V
f=1MHz
On Resistance Variation with Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50
0
50
100
150
Tj, Junction Temperature (șC)
R
D
S
(
on
)
,
N
o
r
m
al
i
z
ed O
n
-
R
es
i
s
t
a
n
c
e
ID=0.5A
VGS=10V
Body Diode Forward Voltage Variation
with Current & Temperature
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain Voltage (V)
I
S
,
S
o
u
r
c
e
-D
r
a
i
n
C
u
rre
n
t
(A
)
Tj=25șC
Tj=-55șC
Tj=150șC
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 3/4
H2N7000
HSMC Product Specification
PD-Ta
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
Ambient Temperature-Ta(
o
C)
P
o
w
e
r D
i
s
s
i
p
a
t
i
o
n
-P
D
(
m
W
)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6267
Issued Date : 1993.09.17
Revised Date : 2001.04.18
Page No. : 4/4
H2N7000
HSMC Product Specification
TO-92 Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1704
0.1902
4.33
4.83
G
0.0142
0.0220
0.36
0.56
B
0.1704
0.1902
4.33
4.83
H
-
*0.1000
-
*2.54
C
0.5000
-
12.70
-
I
-
*0.0500
-
*1.27
D
0.0142
0.0220
0.36
0.56
1
-
*5
°
-
*5
°
E
-
*0.0500
-
*1.27
2
-
*2
°
-
*2
°
F
0.1323
0.1480
3.36
3.76
3
-
*2
°
-
*2
°
Notes :
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
·
Lead : 42 Alloy ; solder plating
·
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
·
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
·
HSMC reserves the right to make changes to its products without notice.
·
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
·
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
·
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
·
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
3
1
A
D
B
C
I
1
E
F
2
3
G
H
2
Style : Pin 1.Source 2.Gate 3.Drain
3-Lead TO-92 Plastic Package
HSMC Package Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
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