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Datasheet: H2N6718 (Hi-Sincerity Mocroelectronics)

Npn Epitaxial Planar Transistor

 

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Hi-Sincerity Mocroelectronics
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 1/4
HSMC Product Specification
H2N6718V
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6718V is designed for general purpose medium power
amplifier and switching.
Absolute Maximum Ratings
Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150
C
Junction Temperature ................................................................................... +150
C Maximum
Maximum Power Dissipation
Total Power Dissipation (Ta=25
C)................................................................................... 1.6 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 100 V
BVCEO Collector to Emitter Voltage................................................................................. 100 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Electrical Characteristics
(Ta=25
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=100uA, IE=0
BVCEO
100
-
-
V
IC=1mA, IB=0
BVEBO
5
-
-
V
IE=10uA, IC=0
ICBO
-
-
100
nA
VCB=80V, IE=0
*VCE(sat)
-
-
350
mV
IC=350mA, IB=35mA
*hFE1
80
-
-
IC=50mA, VCE=1V
*hFE2
50
-
250
IC=250mA, VCE=1V
*hFE3
20
-
-
IC=500mA, VCE=1V
fT
50
-
-
MHz
VCE=10V, IC=50mA, f=100MHz
Cob
-
-
20
pF
VCB=10V, f=1MHz, IE=0
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 2/4
HSMC Product Specification
Characteristics Curve
Current Gain & Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current (mA)
hF
E
V
CE
=1V
Saturation Voltage & Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current (mA)
S
a
t
u
r
a
t
i
on
V
o
l
t
age (
m
V
)
V
CE(sat)
@ I
C
=10I
B
Capacitance & Reverse-Biased Voltage
1
10
100
0.1
1
10
100
1000
Reverse Biased Voltage (V)
Ca
p
a
c
i
t
a
n
c
e
(
p
F
)
Cob
Cutoff Frequency & Collector Current
10
100
1000
1
10
100
1000
Collector Current (mA)
C
u
to
ff F
r
e
q
u
e
n
c
y
(
M
H
z
)
V
CE
=10V
Safe Operating Area
1
10
100
1000
10000
1
10
100
1000
Forward Voltage-V
CE
(V)
Co
l
l
e
c
t
o
r
Cu
r
r
e
n
t
-
I
C
(m
A
)
P
T
=1 ms
P
T
=100 ms
P
T
=1 s
Power Derating
0
200
400
600
800
1000
1200
1400
1600
1800
0
20
40
60
80
100
120
140
160
Ambient Temperature-Ta(
o
C)
P
o
w
e
r
D
i
s
s
i
pat
i
on-
P
D
(
m
W
)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 3/4
HSMC Product Specification
IR Reflow Profile
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0
50
100
150
200
250
300
Time(sec)
T
e
m
per
at
u
r
e(
o
C)
150+/-30
40+/-20 sec
10+/-2 sec
Temperature Profile for Dip Soldering
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
Time(sec)
T
e
m
per
at
u
r
e(
o
C)
10+/-2 sec
120+/-20 sec
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6616-B
Issued Date : 1993.09.24
Revised Date : 2000.12.01
Page No. : 4/4
HSMC Product Specification
TO-126ML Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.1356
0.1457
3.44
3.70
I
-
*0.1795
-
*4.56
B
0.0170
0.0272
0.43
0.69
J
0.0268
0.0331
0.68
0.84
C
0.0344
0.0444
0.87
1.12
K
0.5512
0.5906
14.00
15.00
D
0.0501
0.0601
1.27
1.52
L
0.2903
0.3003
7.37
7.62
E
0.1131
0.1231
2.87
3.12
M
0.1378
0.1478
3.50
3.75
F
0.0737
0.0837
1.87
2.12
N
0.1525
0.1625
3.87
4.12
G
0.0294
0.0494
0.74
1.25
O
0.0740
0.0842
1.88
2.14
H
0.0462
0.0562
1.17
1.42
Notes :
1.Dimension and tolerance based on our Spec. dated Mar. 6,1995.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
Lead : 42 Alloy ; solder plating
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
N
D
E
M
L
K
F
I
A
B
C
H
J
3
2
1
O
G
Style : Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126ML Plastic Package
HSMC Package Code : D
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Ink Marking
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