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Datasheet: H1N4148 (Hi-Sincerity Mocroelectronics)

75V High-speed Switching Diode

 

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Hi-Sincerity Mocroelectronics
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.05.01
Revised Date : 1999.09.01
Page No. : 1/3
HSMC Product Specification
H1N4148
HIGH-SPEED SWITCHING DIODES
Description
The H1N4148 is designed for high-speed switching application in hybrid thick and thin-film
circuits. The device is manufactured by the sillcon epitaxial planar process and packed in plastic
surface mount package.
Features
Ultra-High Speed
Low Forard Voltage
Fast Reverse Recovery Time
Absolute Maximum Ratings
Characteristics
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
Rectified Current (Average)
Half Wave Rectification with Resist Load
at Tamb=25
C and f
50Hz
IO
150
mA
Surge Forward Current at t<1s and Tj=25
C
IFSM
500
mA
Power Dissipation at Tamb=25
C
Ptot
500
mW
Junction Temperature
Tj
200
C
Storage Temperature Range
Ts
-65 to +200
C
Characteristics
(Tj=25
C)
Characteristics
Symbol
Min
Typ
Max
Unit
Forward Voltage at IF=10mA
VF
-
-
1
V
IR
-
-
25
nA
IR
-
-
5
uA
Leakage Current at VR=20V
at VR=75V
at VR=20V,Tj=150
C
IR
-
-
50
uA
Reverse Breakdown Voltage
tested with 100 us Pulses
V(BR)R
100
-
-
V
Capacitance at VF=VR=0
Ctot
-
-
4
pF
Voltage Rise when Switching On
Tested with 50mA Forward Pulses
Tp=0.1us, Rise Time<30ns, fp=5~100kHz
Vfr
-
-
2.5
V
Reverse Recovery Time From
IF=-IR=10mA to IRR=-1mA,VR=6V RL=100
trr
-
-
4
ns
Thermal Resistance Function to Ambient Air
RthA
-
-
0.35
K/mW
Rectification Efficiency at f =100MHz,VRF=2V
v
0.45
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.05.01
Revised Date : 1999.09.01
Page No. : 2/3
HSMC Product Specification
Characteristics Curve
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.05.01
Revised Date : 1999.09.01
Page No. : 3/3
HSMC Product Specification
DO-35(Glass) Dimension
*:Typical
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
DIM
Min.
Max.
Min.
Max.
A
0.0181
0.0220
0.46
0.56
D
0.9646
1.2811
24.50
32.54
B
0.9646
1.2811
24.50
32.54
E
0.0602
0.0787
1.53
2.00
C
0.1200
0.1700
3.05
4.20
Notes :
1.Dimension and tolerance based on our Spec. dated May. 28,1998
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
B
C
D
A
E
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