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Datasheet: H01N45A (Hi-Sincerity Mocroelectronics)

N-channel Power Field Effect Transistor

 

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Hi-Sincerity Mocroelectronics
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 1/4
H01N45A
HSMC Product Specification
H01N45A
N-Channel Power Field Effect Transistor
Features
Typical R
DS(on)
=4.1
Extremely High dv/dt Capability
100% Avalanche Tested
Gate Charge Minimized
New High Voltage Benchmark
Applications
Switch Mode Low Power Supplies (SMPS)
Low Power, Low Cost CFL (Compact Fluorescent Lamps)
Low Power Battery Chargers
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DS
Drain-Source Voltage (V
GS
=0)
450
V
V
DGR
Drain-Gate Voltage (R
GS
=20K
)
450
V
V
GS
Gate-Source Voltage
30
V
I
D
Drain Current (Continuous) at T
C
=25
o
C
0.5
A
I
D
Drain Current (Continuous) at T
C
=100
o
C
0.315
A
I
DM
Drain Current (Pulsed)
2
A
Total Power Dissipation at T
C
=25
o
C
2.5
W
P
D
Derate Factor
0.025
W/
C
dv/dt
Peak Diode recovery Voltage Slope
3
V/ns
T
j
, T
stg
Operating Junction and Storage Temperature Range
-65 to 150
C
I
AR
Avalanche Current, Repetitive or Not-Repetitive (Pulse width
limited by T
J
Max.)
1.5
A
E
AS
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25
C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25
)
25
mJ
Thermal Data
Symbol
Parameter
Value
Units
R
thj-amb
Thermal Resistance Junction-Ambient (Max.)
120
o
C/W
R
thj-lead
Thermal Resistance Junction-Leadt (Max.)
40
o
C/W
T
L
Maximum Lead Temperature for Soldering Purpose
260
o
C
H01N45A Pin Assignment
3-Lead Plastic TO-92
Package Code: A
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
Symbol:
G
D
S
1 2
3
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 2/4
H01N45A
HSMC Product Specification
Electrical Characteristics
(T
case
=25
C, unless otherwise specified)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
ON/OFF
V
(BR)DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
450
-
-
V
V
DS
=Max. Rating
-
-
1
I
DSS
Zero Gate Voltage Drain Current
(V
GS
=0)
V
DS
=Max. Rating, T
C
=125
o
C
-
-
50
uA
I
GSS
Gate-Body Leakage Current
(V
DS
=0)
V
GS
=
30V
-
-
100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2.3
3
3.7
V
R
DS(on)
Static Drain-Source On Resistance V
GS
=10V, I
D
=0.5A
-
4.1
4.5
Dynamic
g
FS
*1
Forward Transconductance
V
DS
I
D(on)
xR
DS(on)max.
, I
D
=0.5A
-
1.1
-
S
C
iss
Input Capacitance
-
185
230
C
oss
Output Capacitance
-
27.5
-
C
rss
Reverse Transfer Capacitance
V
DS
=25V, V
GS
=0V, f=1MHz
-
6
10
pF
Switching On
t
d(on)
Turn-on Delay Time
-
6.7
-
t
r
Rise Time
(V
DD
=225V, I
D
=0.5A, R
G
=4.7
,
V
GS
=10V)
-
4
-
ns
Q
g
Total Gate Charge
-
14
20
Q
gs
Gate-Source Charge
-
2
-
Q
gd
Gate-Drain Charge
(V
DS
=360V, I
D
=0.5A, V
GS
=10V,
R
G
=4.7
)
-
3.2
-
nC
Switching Off
t
r(Voff)
Off-Voltage Rise Time
-
8.5
-
t
f
Fall Time
-
12
-
t
C
Cross-Over Time
(V
DD
=360V, I
D
=1.5A, R
G
=4.7
,
V
GS
=10V)
-
18
-
ns
Source Drain Diode
I
SD
Source-Drain Current
-
-
1.5
I
SDM
*2
Source-Drain Current (pulsed)
-
-
6
A
V
SD
*1
Forward On Voltage
I
SD
=1.5A, V
GS
=0
-
-
1.6
V
t
rr
Reverse Recovery Time
I
SD
=1.5A, di/dt=100A/us
-
225
-
ns
Q
rr
Reverse Recovery Charge
V
DD
=100V, T
J
=150oC
-
530
-
uC
I
RRM
Reverse Recovery Current
-
4.7
-
A
*1: Pulse Test: Pulse duration=300us, duty cycle 1.5%
*2: Pulse width limited by safe operating area.
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 3/4
H01N45A
HSMC Product Specification
TO-92 Dimension
TO-92 Taping Dimension
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
3
1
A
D
B
C
I
1
E
2
3
G
H
2
F
H2A
H2A
H2
H2
D2
A
H
W
W1
H3
H4
H1
L1
L
P2
P
P1
F1F2
D1
D
T2
T
T1
DIM
Min.
Max.
A
4.33
4.83
B
4.33
4.83
C
12.70
-
D
0.36
0.56
E
-
*1.27
F
3.36
3.76
G
0.36
0.56
H
-
*2.54
I
-
*1.27
1
-
*5
2
-
*2
3
-
*2
*: Typical, Unit: mm
3-Lead TO-92 Plastic Package
HSMC Package Code: A
DIM
Min.
Max.
A
4.33
4.83
D
3.80
4.20
D1
0.36
0.53
D2
4.33
4.83
F1,F2
2.40
2.90
H
15.50
16.50
H1
8.50
9.50
H2
-
1
H2A
-
1
H3
-
27
H4
-
21
L
-
11
L1
2.50
-
P
12.50
12.90
P1
5.95
6.75
P2
50.30
51.30
T
-
0.55
T1
-
1.42
T2
0.36
0.68
W
17.50
19.00
W1
5.00
7.00
Unit: mm
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
Control Code
Date Code
H
0 1 N
A
4 5
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200408
Issued Date : 2004.11.01
Revised Date : 2005.03.10
Page No. : 4/4
H01N45A
HSMC Product Specification
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%15%
2. Reflow soldering of surface-mount devices
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (T
L
to T
P
)
<3
o
C/sec
<3
o
C/sec
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
100
o
C
150
o
C
60~120 sec
150
o
C
200
o
C
60~180 sec
Tsmax to T
L
- Ramp-up Rate
<3
o
C/sec
<3
o
C/sec
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
183
o
C
60~150 sec
217
o
C
60~150 sec
Peak Temperature (T
P
)
240
o
C +0/-5
o
C
260
o
C +0/-5
o
C
Time within 5
o
C of actual Peak
Temperature (t
P
)
10~30 sec
20~40 sec
Ramp-down Rate
<6
o
C/sec
<6
o
C/sec
Time 25
o
C to Peak Temperature
<6 minutes
<8 minutes
3. Flow (wave) soldering (solder dipping)
Products
Peak temperature
Dipping time
Pb devices.
245
o
C
5
o
C
5sec
1sec
Pb-Free devices.
260
o
C +0/-5
o
C
5sec
1sec
Figure 1: Temperature profile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25
t 25
o
C to Peak
Time
Tem
p
erature
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