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Datasheet: J2081535_H5N2509P (Hitachi Semiconductor)

Silicon N Channel Mosfet Switching

 

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Hitachi Semiconductor
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(http://www.renesas.com)
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H5N2509P
N
MOSFET
ADJ-208-1535B (Z)
3
2002.06
·
R
DS(on)
= 0.053
typ.
·
I
DSS
= 1
΅
A max (at V
DS
= 250 V, V
GS
= 0 V)
·
tf = 110 ns typ (at I
D
= 15 A, R
L
= 8.3
, V
GS
= 10 V)
·
(Qg)Qg = 110 nC typ (at V
DD
= 200 V, V
GS
= 10 V, I
D
= 30 A)
·
TO­3P
1
2
3
D
S
G
1.
2.
(
)
3.
H5N2509P
2
(Ta = 25
°
C)
·
V
DSS
250
V
·
V
GSS
±30
V
I
D
30
A
I
D
(pulse)
1
120
A
I
DR
30
A
I
DR
(pulse)
1
120
A
I
AP
3
30
A
Pch
2
150
W
ch-c
0.833
°
C/W
Tch
150
°
C
Tstg
­55 to +150
°
C
1. PW
10
΅
s, duty cycle
1%
2. Tc = 25
3. Tch
150
(Ta = 25
°
C)
Min
Typ
Max
·
V
(BR)DSS
250
--
--
V
I
D
= 10 mA, V
GS
= 0
I
GSS
--
--
±0.1
΅
A
V
GS
=
±
30 V, V
DS
= 0
I
DSS
--
--
1
΅
A
V
DS
= 250 V, V
GS
= 0
·
V
GS(off)
3.0
--
4.0
V
V
DS
= 10 V, I
D
= 1 mA
·
R
DS(on)
--
0.053
0.069
I
D
= 15 A, V
GS
= 10 V
4
|y
fs
|
17
28
--
S
I
D
= 15 A, V
DS
= 10 V
4
Ciss
--
3600
--
pF
V
DS
= 25 V
Coss
--
450
--
pF
V
GS
= 0
Crss
--
115
--
pF
f = 1 MHz
·
td(on)
--
48
--
ns
I
D
= 15 A
tr
--
120
--
ns
V
GS
= 10 V
·
td(off)
--
190
--
ns
R
L
= 8.3
tf
--
110
--
ns
Rg = 10
Qg
--
110
--
nC
V
DD
= 200 V
Qgs
--
19
--
nC
V
GS
= 10 V
Qgd
--
53
--
nC
I
D
= 30 A
V
DF
--
0.9
1.35
V
I
F
= 30 A, V
GS
= 0
trr
--
210
--
ns
I
F
= 30 A, V
GS
= 0
Qrr
--
1.8
--
΅
C
diF/dt = 100 A/
΅
s
4.
H5N2509P
3
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.3
0.1
1000
Ta = 25
°
C
10 V
V = 4.5 V
GS
5 V
5.5 V
Tc = 75
°
C
25
°
C
-
25
°
C
Pch (W)
Tc (
°
C)
V
DS
(V)
I
D
(A)
V
DS
(V)
I
D
(A)
V
GS
(V)
I
D
(A)
V = 10 V
DS
100
΅
s
1 ms
PW
= 10 ms (1shot)
DC Operatio
n (Tc = 25
°
C)
10
΅
s
6 V
7 V
8 V
R
DS(on)
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