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Datasheet: S1227-33BR (Hamamatsu Corporation)

 

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Hamamatsu Corporation
Features
l High UV sensitivity: QE 75 % (=200 nm)
l Suppressed IR sensitivity
l Low dark current
Applications
l Analytical equipment
l Optical measurement equipment, etc.
P H O T O D I O D E
Si photodiode
For UV to visible, precision photometry; suppressed IR sensitivity
S1227 series
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Package
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
(V)
(C)
(C)
S1227-16BQ
/Q
S1227-16BR
/R
2.7 15
1.1 5.9
5.9
S1227-33BQ
/Q
S1227-33BR
/R
6 7.6
2.4 2.4
5.7
S1227-66BQ
/Q
S1227-66BR
/R
8.9 10.1
5.8 5.8
33
S1227-1010BQ
/Q
S1227-1010BR
/R
15 16.5
10 10
100
5
-20 to +60
-20 to +80
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Spectral
response
range
Peak
sensitivity
wavelength
p
p
200 nm He-Ne
Laser Min. Typ.
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
T
CID
Rise
time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
4
=10 mV
(G)
NEP
Type No.
(nm)
(nm)
Min. Typ. 633 nm (A) (A)
(pA) (times/C) (s)
(pF)
Min. Typ. (W/Hz
1/2
)
S1227-16BQ
190 to 1000
0.36 0.10 0.12 0.34
2
3.2
2.5 10
-15
S1227-16BR
320 to 1000
0.43
-
-
0.39
2.2
3.7
5
0.5
170
2 20 2.1 10
-15
S1227-33BQ
190 to 1000
0.36 0.10 0.12 0.34
2
3.0
2.5 10
-15
S1227-33BR
320 to 1000
0.43
-
-
0.39
2.2
3.7
5
0.5
160
2 20 2.1 10
-15
S1227-66BQ
190 to 1000
0.36 0.10 0.12 0.34
11
16
5.0 10
-14
S1227-66BR
320 to 1000
0.43
-
-
0.39
13
19
20
2
950
0.5 5 4.2 10
-15
S1227-1010BQ 190 to 1000
0.36 0.10 0.12 0.34
32
44
8.0 10
-14
S1227-1010BR 320 to 1000
720
0.43
-
-
0.39
36
53
50
1.12
7
3000 0.2 2 6.7 10
-14
* Window material Q: quartz glass, R: resin coating
Si photodiode
S1227 series
0.1
0
PHOTO SENSITIVITY (A/W)
190
400
600
800
1000
WAVELENGTH (nm)
0.3
0.2
(Typ. Ta=25 C)
0.4
0.5
0.6
0.7
S1227-BR
S1227-BQ
S1227-BQ
S1227-BR
s Spectral response
s Photo sensitivity temperature characteristic
KSPDB0094EA
TEMPERATURE COEFFICIENT (%/

C)
WAVELENGTH (nm)
(Typ. )
0
190
400
600
800
1000
+1.0
+0.5
+1.5
-0.5
KSPDB0030EB
RISE TIME
LOAD RESISTANCE (
)
(Typ. Ta
=25 C, V
R
=0 V)
10
2
10 ns
10
3
10
4
10
5
S1227-16BQ/BR, -33BQ/BR
S1227-1010BQ/BR
S1227-66BQ/BR
100 ns
1
s
10
s
100
s
1 ms
KSPDB0095EA
DARK CURRENT
REVERSE VOLTAGE (V)
(Typ. Ta
=25 C)
0.01
100 fA
0.1
1
10
1 pA
10 pA
100 pA
1 nA
10 nA
S1227-1010BQ/BR
S1227-66BQ/BR
S1227-33BQ/BR
S1227-16BQ/BR
KSPDB0096EA
SHUNT RESISTANCE
AMBIENT TEMPERATURE (C)
(Typ. V
R
=10 mV)
-20
0
20
40
60
80
10 k
100 k
1 M
10 M
100 M
1 G
10 G
100 G
1 T
S1227-33BQ/BR
S1227-16BQ/BR
S1227-66BQ/BR
S1227-1010BQ/BR
s
Shunt resistance vs. ambient temperature
KSPDB0097EA
OUTPUT CURRENT (A)
INCIDENT LIGHT LEVEL (lx)
(Typ. Ta=25 C, A light source fully illuminated)
10
-16
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
10
2
10
4
10
6
10
-14
10
-12
10
-10
10
-8
10
-6
10
-4
10
-2
10
0
R
L
=10
R
L
=100
DEPENDENT ON NEP
KSPDB0026EB
s
Rise time vs. load resistance
s
Dark current vs. reverse voltage
s
Photo sensitivity linearity (S1227-1010BQ/-1010BR)
Si photodiode
S1227 series
KSPDA0094EA
KSPDA0095EA
KSPDA0096EA
KSPDA0097EA
S1227-33BQ
S1227-33BR
s Dimensional outlines (unit: mm)
S1227-16BQ
S1227-16BR
8.5 0.2
2.7 0.1
0.5
1.5 0.1
6.2
ANODE MARK
0.5
LEAD
12.2
13.5 0.13
15 0.15
0.85
ACTIVE AREA
HOLE
(2
) 0.8
PHOTOSENSITIVE
SURFACE
8.5 0.2
2.7 0.1
1.5 0.1
6.2
ANODE MARK
13.5 0.13
15 0.15
0.35
ACTIVE AREA
HOLE
(2
) 0.8
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
7.6 0.1
6.0 0.1
ACTIVE AREA
0.1
2.0 0.1
10.5
0.75
0.35
4.5 0.2
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
6.6 0.3
5.0 0.3
7.6 0.1
6.0 0.1
ACTIVE AREA
2.0 0.1
10.5
0.65
0.35
6.6 0.3
4.5 0.2
5.0 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si photodiode
S1227 series
Cat. No. KSPD1036E01
Mar. 2001 DN
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 0.2
15.0 0.15
ACTIVE AREA
2.15 0.1
10.5
0.8
0.3
15.1 0.3
12.5 0.2
13.7 0.3
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 0.1
8.9 0.1
ACTIVE AREA
2.0 0.1
10.5
0.65
0.3
9.2 0.3
7.4 0.2
8.0 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
Resin coating may extend a
maximum of 0.1 mm above the
upper surface of the package.
10.1 0.1
8.9 0.1
ACTIVE AREA
0.1
2.0 0.1
10.5
0.75
0.3
9.2 0.3
7.4 0.2
8.0 0.3
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
S1227-1010BQ
S1227-1010BR
KSPDA0100EA
KSPDA0101EA
KSPDA0098EA
KSPDA0099EA
S1227-66BQ
S1227-66BR
ANODE
TERMINAL MARK
0.5
LEAD
PHOTOSENSITIVE
SURFACE
16.5 0.2
15.0 0.15
ACTIVE AREA
2.15 0.1
10.5
0.9
0.3
15.1 0.3
12.5 0.2
13.7 0.3
0.1
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