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Datasheet: S1133 (Hamamatsu Corporation)

Si photodiode

 

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Hamamatsu Corporation
S1087/S1133 series are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can
reach the active area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide
dynamic range from low light levels to high light levels.
Features
l S1087, S1133 : For visible range
S1087-01, S1133-01: For visible to IR range
S1133-14 : For visible to near IR range
Applications
l Exposure meter
l Illuminometer
l Camera auto exposure
l Stroboscope light control
l Copier
l Display light control
l Optical switch
P H O T O D I O D E
Si photodiode
Ceramic package photodiode with low dark current
S1087/S1133 series
s
General ratings / Absolute maximum ratings
Absolute maximum ratings
Active
area size
Effective
active area
Reverse
voltage
V
R
Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm
2
)
(V)
(C)
(C)
S1087
/V
S1087-01
/R
1.3 1.3
1.6
S1133
/V
S1133-01
S1133-14
/R
2.4 2.8
6.6
10
-10 to +60
-20 to +70
* Window material R: resin coating, V: visual-compensation filter
s
Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
Peak
sensitivity
wavelength
p
p
GaP
LED
He-Ne
laser
Infrared
sensitivity
ratio
Short
circuit
current
Isc
100 lx
Temp.
coefficient
of Isc
Dark
current
I
D
V
R
=1 V
Max.
Temp.
coefficient
of I
D
T
CID
Rise
time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
Type No.
(nm)
(nm)
560 nm 633 nm (%) (A) (%/C) (pA) (times/C) (s) (pF)
Min.
(G)
Typ.
(G)
S1087
320 to 730 560
0.3
0.3
0.19
10
0.16
-0.01
S1087-01
320 to 1100 960
0.58
0.33
0.38
-
1.3
0.1
0.5
200
250
S1133
320 to 730 560
0.3
0.3
0.19
10
0.65
-0.01
S1133-01
320 to 1100 960
0.58
0.38
-
5.6
10
2.5
700
100
S1133-14
320 to 1000 720
0.4
0.33
0.37
-
3.4
0.1
20
1.12
0.5
200
10
50
Si photodiode
S1087/S1133 series
0
0.1
0.2
0.3
0.4
0.7
200
400
600
800
1000
WAVELENGTH (nm)
PHOTO SENSITIVITY (A/W)
(Typ. Ta=25 C)
0.5
0.6
S1087
S1133
S1133-14
S1087-01
S1133-01
QE=100 %
s Spectral response
s Photo sensitivity temperature characteristic
(typical example: S1087)
KSPDB0119EA
WAVELENGTH (nm)
TEMPERATURE COEFFICIENT (
%
/

C)
(Typ.)
-1.0
0
200
400
600
800
1000
-0.5
+0.5
+1.0
KSPDB0063EB
10 ns
100 ns
1 s
10 s
100 s
1 ms
10
2
10
3
10
4
10
5
LOAD RESISTANCE (
)
RISE TIME
(Typ. Ta=25 C, V
R
=0 V)
S1087/-01, S1133-14
S1133/-01
s Rise time vs. load resistance
s Dark current vs. reverse voltage
KSPDB0120EA
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
REVERSE VOLTAGE (V)
DARK CURRENT
(Typ. Ta=25 C)
S1087/-01
S1133-14
S1133/-01
KSPDB0121EA
Si photodiode
S1087/S1133 series
100 M
1 G
10 T
100 T
-20
0
20
70
40
60
AMBIENT TEMPERATURE (C)
SHUNT RESISTANCE
10 G
100 G
1 T
S1133/-01
S1087/-01
S1133-14
(Typ. V
R
=10 mV)
s
Shunt resistance temperature characteristics
s
Short circuit current linearity
KSPDB0122EA
10-
16
10-
14
10-
12
10-
10
10-
8
10
0
10-
8
10-
6
10-
4
10-
2
10
0
INCIDENT LIGHT LEVEL (lx)
OUTPUT CURRENT (A)
(Typ. Ta=25 C, "A" light source fully illuminated)
10
2
10
4
10
6
10
8
10-
6
10-
4
10-
2
S1133-01
S1133-14
S1087-01
S1133
S1087
KSPDB0123EA
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvgen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2001 Hamamatsu Photonics K.K.
Si photodiode
S1087/S1133 series
Cat. No. KSPD1039E01
Apr. 2001 DN
6.0
CATHODE
INDICATOR HOLE
5.0 0.2
0.8
12 1.0
1.5 0.2
3.0 0.2
0.1
FILTER
FILTER
+0
- 0.25
ACTIVE AREA
1.3
PHOTOSENSITIVE
SURFACE
0.45
LEAD
KSPDA0053EA
8.0
CATHODE
INDICATOR HOLE
6.0
0.7
9 1.0
1.5 0.2
5.0 0.2
0.2
+0
- 0.25
+
0.1
-
0.3
ACTIVE AREA
2.8 2.4
PHOTOSENSITIVE
SURFACE
FILTER
FILTER
0.45
LEAD
KSPDA0055EA
S1133
S1133-01/-14
S1087
S1087-01
6.0
CATHODE
INDICATOR HOLE
ACTIVE AREA
1.3
5.0 0.2
0.8
12 1.0
1.5 0.2
3.0 0.2
+0
- 0.25
0.45
LEAD
PHOTOSENSITIVE
SURFACE
KSPDA0052EA
8.0
CATHODE
INDICATOR HOLE
6.0
a
9 1.0
1.5 0.2
5.0 0.2
+
0.1
-
0.3
+0
-
0.25
a
S1133-01
0.7
S1133-14
0.6
ACTIVE AREA
2.8 2.4
PHOTOSENSITIVE
SURFACE
0.45
LEAD
KSPDA0054EA
s
Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.15)
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