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Datasheet: P1202-16 (Hamamatsu Corporation)

CbS photoconductive cell

 

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Hamamatsu Corporation
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l Small size, thin substrate
l Low price
l Suitable for high voltage and high power application
Applications
l Auto dimmer for digital display, CRT and room illumination
l Automatic light on/off sensor
l Sensor for electronic toy and teaching aid material
V I S I B L E D E T E C T O R
CdS photoconductive cell
Standard type designed to withstand high voltage and high power
Resin coating type (7R,10R type)
s
Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Absolute maximum ratings
Characteristics *
1
Resistance *
2
Response time 10 lx *
5
Supply
voltage
Power
dissipation
P
Ambient
temperature
Ta
Peak
sensitivity
wavelength
p
10 lx, 2856 K
0 lx *
3
100
10
*
4
Rise time
tr
Fall time
tf
Type No.
Dimensional
outline
(Vdc)
(mW)
(°C)
(nm)
Min.
(k)
Max.
(k)
Min.
(M)
100 to 10 lx
(ms)
(ms)
7R type
P380-7R
200
50
-30 to +50
620
4.4
13
20
0.85
35
20
P722-7R
100
150
-30 to +60
560
2.5
7.5
0.5
0.70
50
40
P1195
200
100
-30 to +70
550
50
150
20
0.90
40
10
P1202-12
100
150
560
3.5
14
0.5
0.70
50
40
P1202-16
200
100
-30 to +60
550
23
67
20
0.90
30
10
10R type
P722-10R
200
300
560
12
36
0.70
P1096-06
100
100
-30 to +60
550
2.8
8.4
0.5
0.75
50
40
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after removal of light of 10 lx.
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx
E
100
, E
10
: illuminance 100 lx, 10 lx
R
100
, R
10
: resistance at 100 lx and 10 lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance when
fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.
log (R
100
) - log (R
10
)
log (E
100
) - log (E
10
)
=
100
10
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
CdS photoconductive cell
Resin coating type (7R,10R type)
Cat. No. KCDS1002E01
Apr. 2001 DN
1000
100
10
1
0.1
0.1
1
10
100
ILLUMINANCE (lx)
RESISTANCE (k
)
(Typ. Ta=25 °C, light source: 2856 K)
P1202-12
P380-7R
P722-7R
P722-10R
P1096-06
P1195
P1202-16
(Typ. light source: 2856 K, 10 lx)
140
120
100
80
60
­30 ­20
0
20
40
60
80
RELATIVE RESISTANCE (%)
AMBIENT TEMPERATURE (°C)
P380-7R
P1195
P1202-16
P1096-06
P722-7R
P1202-12
P722-10R
2.5 MAX.
27 ± 2
7.0 ± 0.2
5.9 ± 0.2
5.0
ACTIVE AREA
0.5
LEAD
2.5 MAX.
27 ± 2
10.1 ± 0.2
8.5 ± 0.2
7.6
ACTIVE AREA
0.5
LEAD
s
Resistance vs. illuminance
KCDSB0018EA
s
Dimensional outlines (unit: mm)
KCDSA0002EA
s
Resistance vs. ambient temperature
KCDSB0019EA
7R type
10R type
KCDSA0003EA
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