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Datasheet: P1082-03 (Hamamatsu Corporation)

Resin Coating Type (5r Type)

 

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Hamamatsu Corporation
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
l Small size, thin package
l Low price
l Wide range of sensor lineup
Applications
l Programed electronic shutter and stroboscope light control
for compact camera
l Auto dimmer for digital display, CRT and room illumination
l Sensor for automatic light on/off
l Sensor for electronic toy and teaching aid material
V I S I B L E D E T E C T O R
CdS photoconductive cell
Standard type designed for general-purpose, wide application
Resin coating type (5R type)
s
Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Absolute maximum ratings
Characteristics *
1
Cell resistance *
2
Response time 10 lx *
5
Supply
voltage
Power
dissipation
P
Ambient
temperature
Ta
Peak
sensitivity
wavelength
p
10 lx, 2856 K
0 lx *
3
100
10
*
4
Rise time
tr
Fall time
tf
Type No.
(Vdc)
(mW)
(°C)
(nm)
Min.
(k)
Max.
(k)
Min.
(M)
100 to 10 lx
(ms)
(ms)
P201D-5R
50
-30 to +60
520
48
140
20
0.90
30
10
P380-5R
30
-30 to +50
620
12
36
20
0.85
35
20
P722-5R
-30 to +60
5.3
15
0.5
0.70
50
40
P1082-03
70
-30 to +80
560
13
39
0.2
0.55
100
150
P1201
20
60
P1201-01
100
70
-30 to +80
540
30
90
5.0
0.75
40
30
*1: All characteristics are measured after exposure to light (100 to 500 lx) for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after shutting off the 10 lx light.
*4: Typical gamma characteristics (within ±0.10 variations) between 100 lx to 10 lx
E
100
, E
10
: illuminance 100 lx, 10 lx
R
100
, R
10
: resistance at 100 lx and 10 lx respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (when fully
illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance level to
37 %.
log (R
100
) - log (R
10
)
log (E
100
) - log (E
10
)
=
100
10
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
CdS photoconductive cell
Resin coating type (5R type)
Cat. No. KCDS1001E01
Apr. 2001 DN
(Typ. light source: 2856 K, 10 lx)
140
120
100
80
60
-30 -20
0
20
40
60
80
RELATIVE RESISTANCE (%)
AMBIENT TEMPERATURE (°C)
P1082-03
P380-5R
P201D-5R
P722-5R
P1201,P1201-01
10000
1000
100
10
1
0.1
1
10
100
ILLUMINANCE (lx)
CELL RESISTANCE (k
9
)
(Typ. Ta=25 °C, light source: 2856 K)
P1201-01
P1082-03
P201D-5R
P380-5R
P1201
P722-5R
2.5 MAX.
27 ± 2
5.1 ± 0.2
4.3 ± 0.2
3.4
0.5
LEAD
ACTIVE AREA
s
s
s
s
s
Cell resistance vs. illuminance
KCDSB0016EA
s
s
s
s
s
Dimensional outline (unit: mm)
s
s
s
s
s
Resistance vs. ambient temperature
KCDSB0017EA
KCDSA0001EA
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