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Datasheet: L14N1 (Fairchild Semiconductor)

Hermetic Silicon Phototransistor

 

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Fairchild Semiconductor
0.038 (.97) NOM
45
0.046 (1.16)
0.036 (0.92)
1
3
0.030 (0.76)
MAX
0.195 (4.96)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.021 (0.53) 3X
0.210 (5.34)
MAX
2
0.050 (1.27)
0.100 (2.54) DIA.
0.100 (2.54)
PACKAGE DIMENSIONS
FEATURES
Hermetically sealed package
Wide reception angle
Device can be used as a photodiode by using the collector and base leads.
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
HERMETIC SILICON PHOTOTRANSISTOR
DESCRIPTION
The L14N1/L14N2 are silicon phototransistors mounted in a wide angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300308
6/01/01
1 OF 4
www.fairchildsemi.com
1
EMITTER
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
L14N1
L14N2
www.fairchildsemi.com
2 OF 4
6/01/01
DS300308
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
I
C
= 10 mA, Ee = 0
BV
CEO
30
--
V
Emitter-Base Breakdown
I
E
= 100
A, Ee = 0
BV
EBO
5
--
V
Collector-Base Breakdown
I
C
= 100
A, Ee = 0
BV
CBO
40
--
V
Collector-Emitter Leakage
V
CE
= 10 V, Ee = 0
I
CEO
--
100
nA
Collector-Base leakage
V
CB
= 25 V, Ee = 0
I
CBO
--
25
nA
Reception Angle at 1/2 Sensitivity
40
Degrees
On-State Collector Current L14N1
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8
)
I
C(ON)
1.0
--
mA
On-State Collector Current L14N2
Ee = 0.5 mW/cm
2
, V
CE
= 5 V
(7,8
)
I
C(ON)
2.0
mA
On-State Photodiode Current
Ee = 1.5 mW/cm
2
, V
CB
= 5 V
(7,8
)
I
CB(ON)
5.0
A
Rise Time
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
t
r
14
s
Fall Time
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
t
f
16
s
Saturation Voltage L14N1
I
C
= 0.8 mA, E
e
= 3.0 mW/cm
2(7,8)
V
CE(SAT)
--
0.40
V
Saturation Voltage L14N2
I
C
= 1.6 mA, E
e
= 3.0 mW/cm
2(7,8)
V
CE(SAT)
--
0.40
V
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Collector to Emitter Breakdown Voltage
V
CEO
30
V
Collector to Base Breakdown Voltage
V
CBO
40
V
Emitter to Base Breakdwon Voltage
V
EBO
5
V
Power Dissipation (T
A
= 25C)
(1)
P
D
300
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
600
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/C above 25C ambient.
2. Derate power dissipation linearly 6.00 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 3.0 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870K, of 10 mW/cm
2
.
HERMETIC SILICON PHOTOTRANSISTOR
L14N1
L14N2
Figure 1. Light Current vs. Collector to Emitter Voltage
.01
.02
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
.01
.02
.04
.06
.08
.1
.2
.4
.8
.6
1
4
8
6
2
10
.04 .06 .08 .1
.2
.4 .6 .8 1
2
4
6 8 10
20
I
L
, NORMALIZED LIGHT CURRENT
Figure 3. Dark Current vs. Temperature
0.1
0
20
10
3
10
2
10
1
10
4
10
5
10
40
50
I
CEO
, NORMLIZED DARK CURRENT
30
70
60
90
100
80
Figure 2. Normalized Light Current vs. Radiation
.01
.02
.04
.06
.08
1
2
4
6
8
.1
.2
.4
.8
E
e
- TOTAL IRRADIANCE IN mW/cm
2
1
2
4
.6
2
1
20
I
L
, NORMALIZED LIGHT CURRENT
I
L
, NORMALIZED LIGHT CURRENT
4
6
8 10
T
A
, TEMPERATURE (
C)
T
A
, TEMPERATURE (
C)
NORMALIZED TO:
T
A
= 25
C
V
CE
= 10 V
Figure 4. Light Current vs. Temperature
.01
.02
.04
.06
.08
.1
.2
.4
.8
.6
1
2
4
-50
-26
26
50
75
100
0
Ee = 0.2 mW/cm
2
Ee = 0.5 mW/cm
2
Ee = 1 mW/cm
2
Ee = 2 mW/cm
2
Ee = 5 mW/cm
2
Ee = 10 mW/cm
2
Ee = 20 mW/cm
2
Ee = 0.1 mW/cm
2
NORMALIZED TO:
Ee = 5 mW/cm
2
V
CE
= 5 V
T
A
= 25
C
PULSED
t
p
= 300
sec
NORMALIZED TO:
Ee = 5 mW/cm
2
V
CE
= 5 V
T
A
= 25
C
PULSED
t
p
= 300
sec
NORMALIZED TO: IF = 5 mA
V
CE
= 5 V
T
A
= 25
C
PULSED
G
A
A
S
SOURCE (1N6265)
T
J
= T
A
, tp = 300
sec
Figure 5. Angular and Spectral Response
80
-40
0
100
0
60
40
20
0.8
1
0
0.6
0.4
0.2
-20
40
1100
500
700
900
RELATIVE OUTPUT (%)
20
, WAVE LENGTH
(NANOMETERS)
, ANGULAR DISPLACEMENT
FROM OPTICAL AXIS
(DEGREES)
IF = 50 mA
IF = 20 mA
IF = 10 mA
IF = 5 mA
IF = 2 mA
IF = 1 mA
IF = 0.5 mA
t r
and t
f, NORMALIZED SWITCHING LIGHT SPEED
I
CE
, OUTPUT CURRENT (mA)
Figure 6. Switching Speed vs. Bias
RISE TIME
FALL TIME
.1
.2
.4
.6
.8
1
2
4
8
6
10
20
40
60
80
100
.1
.2
.6
.4
.8 1
4
2
10
8
.1
.2
.6
.4
.8 1
4
2
8 10
6
NORMALIZED TO:
V
CC
= 5 V
I
C
= 10 mA
R
L
= 100
T
A
= 25
C
NORMALIZED TO:
V
CC
= 5 V
I
C
= 10 mA
R
L
= 100
T
A
= 25
C
R
L
= 1000
R
L
= 500
R
L
= 250
R
L
= 100
R
L
= 50
R
L
= 1000
R
L
= 500
R
L
= 250
R
L
= 100
R
L
= 50
DS300308
6/01/01
3 OF 4
www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14N1
L14N2
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300308
6/01/01
4 OF 4
www.fairchildsemi.com
HERMETIC SILICON PHOTOTRANSISTOR
L14N1
L14N2
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