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Datasheet: L14F1 (Fairchild Semiconductor)

Hermetic Silicon Photodarlington

 

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Fairchild Semiconductor
0.038 (0.97)
0.100 (2.54)
0.050 (1.27)
45
0.046 (1.16)
0.036 (0.92)
1
3
0.030 (0.76)
NOM
0.195 (4.95)
0.178 (4.52)
0.230 (5.84)
0.209 (5.31)
0.500 (12.7)
MIN
0.255 (6.47)
0.225 (5.71)
0.020 (0.51) 3X
2
PACKAGE DIMENSIONS
FEATURES
Hermetically sealed package
Narrow reception angle
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.
DESCRIPTION
The L14F1/L14F2 are silicon photodarlingtons mounted in a narrow angle, TO-18 package.
2001 Fairchild Semiconductor Corporation
DS300306
6/01/01
1 OF 4
www.fairchildsemi.com
1
EMITTER
(CONNECTED TO CASE)
COLLECTOR
3
BASE 2
SCHEMATIC
HERMETIC SILICON
PHOTODARLINGTON
L14F1
L14F2
www.fairchildsemi.com
2 OF 4
6/01/01
DS300306
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Collector-Emitter Breakdown
I
C
= 10 mA, Ee = 0
BV
CEO
25
--
V
Emitter-Base Breakdown
I
E
= 100
A, Ee = 0
BV
EBO
12
--
V
Collector-Base Breakdown
I
C
= 100
A, Ee = 0
BV
CBO
25
--
V
Collector-Emitter Leakage
V
CE
= 12 V, Ee = 0
I
CEO
--
100
nA
Reception Angle at 1/2 Sensitivity
8
Degrees
On-State Collector Current L14F1
Ee = .125 mW/cm
2
, V
CE
= 5 V
(7)
I
C(ON)
7.5
--
mA
On-State Collector Current L14F2
Ee = .125 mW/cm
2
, V
CE
= 5 V
(7
)
I
C(ON)
2.5
mA
Rise Time
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
t
r
300
s
Fall Time
I
C
= 10 mA, V
CC
= 5 V, R
L
=100
t
f
250
s
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25C) (All measurements made under pulse conditions)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
-65 to +125
C
Storage Temperature
T
STG
-65 to +150
C
Soldering Temperature (Iron)
(3,4,5 and 6)
T
SOL-I
240 for 5 sec
C
Soldering Temperature (Flow)
(3,4 and 6)
T
SOL-F
260 for 10 sec
C
Collector to Emitter Breakdown Voltage
V
CEO
25
V
Collector to Base Breakdown Voltage
V
CBO
25
V
Emitter to Base Breakdwon Voltage
V
EBO
12
V
Power Dissipation (T
A
= 25C)
(1)
P
D
300
mW
Power Dissipation (T
C
= 25C)
(2)
P
D
600
mW
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25C unless otherwise specified)
NOTE:
1. Derate power dissipation linearly 3.00 mW/C above 25C ambient.
2. Derate power dissipation linearly 6.00 mW/C above 25C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16"
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870K color temperature. A GaAs source of 0.05 mW/cm
2
is approximately
equivalent to a tungsten source, at 2870K, of 0.2 mW/cm
2
.
L14F1
L14F2
HERMETIC SILICON
PHOTODARLINGTON
Figure 1. Light Current vs. Collector to Emitter Voltage
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
0.1
1.0
10
100
5
10
15
20
25
30
35
I
L
, NORMALIZED LIGHT CURRENT
Figure 4. Angular Response
0
-90
40
30
20
10
50
60
90
80
70
100
110
-70
-50
-30
-10
10
30
50
70
90
RELATIVE AMPLITUDE
Figure 2. Relative Light Current vs. Ambient Temperature
.01
.02
.04
.08
.06
-50
-25
0
25
.1
.2
.4
.6
.8
2
4
6
8
1.0
10
125
100
75
50
I
L
/ I
L
@25
C
,
RELATIVE LIGHT CURRENT
T, TEMPERATURE (
C)
I
L
, LIGHT CURRENT (mA)
Figure 6. Light Current vs. Relative Switching Speed
0.1
1.0
10
100
0.01
0.1
1.0
100
10
5.0 mW/cm
2
2.0
1.0
NORMALIZED TO:
V
CE
= 5 V
Ee = .2 mW/cm
2
Figure 3. Spectral Response
0.4
400
600
0.8
0.7
0.6
0.5
0
0.3
0.2
0.1
0.9
1.0
500
900
1200
1000
1100
RELATIVE SPECTRAL RESPONSE
800
700
, WAVE LENGTH (NANOMETERS)
DEGREES
RELATIVE SWITCHING SPEED
td + tr + ts + tf
.5
.2
.1
.05
V
CE
= 5 V
H = .2 mW/cm
2
NORMALIZED TO:
R
L
= 100
I
L
= 10 mA
LOAD RESISTANCE
10
100
1000
V
CC
= 10 V
OUTPUT
PULSE
t
ON
= t
d
+ t
r
t
OFF
= t
s
+ t
f
INPUT PULSE
t
d
t
r
t
s
t
f
INPUT
LED56
LED
L14F
R
L
OUTPUT
I
90%
10%
1.0 V
Figure 5. Test Circuit and Voltage Waveforms
V
CC
DS300306
6/01/01
3 OF 4
www.fairchildsemi.com
L14F1
L14F2
HERMETIC SILICON
PHOTODARLINGTON
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300306
6/01/01
4 OF 4
www.fairchildsemi.com
L14F1
L14F2
HERMETIC SILICON
PHOTODARLINGTON
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