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Datasheet: J112 (Fairchild Semiconductor)

N-Channel Switch

 

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Fairchild Semiconductor
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
J111
J112
J113
MMBFJ111
MMBFJ112
MMBFJ113
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
35
V
V
GS
Gate-Source Voltage
- 35
V
I
GF
Forward Gate Current
50
mA
T
J
,T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
J111- J113
*MMBFJ111
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
225
1.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
556
C/W
SOT-23
Mark: 6P / 6R / 6S
G
S
D
G
S
D
TO-92
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, I
GS
= 0
J111
J112
J113
20
5.0
2.0
mA
mA
mA
r
DS(
on
)
Drain-Source On Resistance
V
DS
0.1 V, V
GS
= 0
J111
J112
J113
30
50
100
SMALL-SIGNAL CHARACTERISTICS
C
dg(on)
C
sg(on)
Drain Gate & Source Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0 MHz
28
pF
C
dg(off)
Drain-Gate Off Capacitance
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
5.0
pF
C
sg(off)
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
5.0
pF
*
Pulse Test: Pulse Width
300
s, Duty Cycle
3.0%
Typical Characteristics
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= - 1.0
A, V
DS
= 0
- 35
V
I
GSS
Gate Reverse Current
V
GS
= - 15 V, V
DS
= 0
- 1.0
nA
V
GS(off)
Gate-Source Cutoff Voltage
V
DS
= 5.0 V, I
D
= 1.0
A
J111
J112
J113
- 3.0
- 1.0
- 0.5
- 10
- 5.0
- 3.0
V
V
V
I
D(off)
Gate-Source Cutoff Voltage
V
DS
= 5.0 V, V
GS
= - 10 V
1.0
nA
r
-
DRA
I
N
"
O
N"
RE
S
I
S
T
A
NCE
(

)
Parameter Interactions
0.5
1
2
5
10
5
10
20
50
100
5
10
20
50
100
V - GATE CUTOFF VOLTAGE (V)
g
-
T
R
AN
S
C
O
N
D
UCT
AN
CE
(
m
m
h
o
s
)
GS (OFF)
fs
I , g @ V = 15V,
V = 0 PULSED
r @ 1.0 mA, V = 0
V @ V = 15V,
I = 1.0 nA
GS(off)
DSS
r
D
I
DSS
DS
DS
GS
DS
DS
GS
fs
DS
DS
g
fs
_
_
_
_
_
Common Drain-Source
0
0.4
0.8
1.2
1.6
2
0
2
4
6
8
10
V - DRAIN-SOURCE VOLTAGE (V)
I
-
DRAI
N CURRE
NT
(
m
A
)
DS
D
- 0.4 V
- 1.0 V
- 0.8 V
- 0.2 V
- 0.6 V
V = 0 V
GS
T = 25C
TYP V = - 2.0 V
GS(off)
A
- 1.2 V
- 1.4 V
N-Channel Switch
(continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Typical Characteristics
(continued)
Transfer Characteristics
-3
-2
-1
0
0
10
20
30
40
V - GATE-SOURCE VOLTAGE (V)
I
-
DRA
I
N
CURRE
NT
(
m
A)
GS
D
V = - 3.0 V
GS(off)
25C
V = 15 V
DS
V = - 2.0 V
GS(off)
125C
- 55C
25C
- 55C
125C
Transfer Characteristics
-1.5
-1
-0.5
0
0
4
8
12
16
V - GATE-SOURCE VOLTAGE (V)
I
-
DRAI
N CURRE
NT
(
m
A
)
GS
D
V = - 1.6 V
GS(off)
25C
V = 15 V
DS
V = - 1.1 V
GS(off)
125C
- 55C
25C
- 55C
125C
Transfer Characteristics
-3
-2
-1
0
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g
-
T
RAN
S
C
O
NDUCT
ANCE
(
m
m
h
o
s
)
GS
fs
V = - 3.0 V
GS(off)
25C
V = 15 V
DS
V = - 2.0 V
GS(off)
125C
- 55C
25C
125C
- 55C
Transfer Characteristics
-1.5
-1
-0.5
0
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g
-
T
RANS
CO
ND
UCT
A
NCE
(
m
m
h
o
s
)
GS
fs
V = - 1.6 V
GS(off)
25C
V = 15 V
DS
V = - 1.1 V
GS(off)
125C
- 55C
25C
125C
- 55C
On Resistance vs Drain Current
1
2
5
10
20
50
100
10
20
50
100
I - DRAIN CURRENT (mA)
r
-

D
R
A
IN
"
O
N
"
R
E
S
I
S
T
A
N
C
E
D
DS
V
TYP = - 7.0V
GS(off)
25C
(

)
125C
25C
125C
r @ V = 0
GS
- 55C
DS
V
TYP = - 2.0V
GS(off)
- 55C
Normalized Drain Resistance
vs Bias Voltage
0
0.2
0.4
0.6
0.8
1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r
-
NO
RM
A
L
I
Z
E
D
RE
S
I
S
T
A
NCE
GS
DS
r =
DS
V @ 5.0V, 10

A
GS(off)
r
DS
________
V
GS(off)
V
GS
1 -
GS(off)
N-Channel Switch
(continued)
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Output Conductance
vs Drain Current
0.01
0.1
10
0.1
1
10
100
I - DRAIN CURRENT (mA)
g
-

O
U
T
P
UT
CO
NDUCT
ANCE
(
m
h
o
s
)
D
os
V = - 5.0V
GS(off)
T = 25C
f = 1.0 kHz
V = 5.0V
DG

A
10V
15V
20V
5.0V
V = - 2.0V
GS(off)
V = - 0.85V
GS(off)
10V
15V
20V
10V
15V
20V
5.0V
Transconductance
vs Drain Current
0.1
1
10
1
10
100
I - DRAIN CURRENT (mA)
g
-
T
R
A
N
S
C
O
NDUCT
AN
CE

(
m
m
h
o
s
)
D
fs
V = - 1.4V
GS(off)
T = 25C
V = 15V
f = 1.0 kHz
A
DG
V = - 3.0V
GS(off)
Capacitance vs Voltage
-20
-16
-12
-8
-4
0
1
10
100
V - GATE-SOURCE VOLTAGE (V)
C
(C
)

-

C
A
P
ACI
T
ANC
E
(p
F
)
rs
GS
is
C (V = 0)
is
DS
C (V = 20)
is
DS
C (V = 0)
rs
DS
f = 0.1 - 1.0 MHz
Noise Voltage vs Frequency
0.01
1
10
100
1
5
10
50
100
f - FREQUENCY (kHz)
e
-
N
O
I
SE VO
L
T
A
G
E

(
n
V /
H
z
)
n
V = 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f

1.0 kHz
DG
I = 10 mA
D
I = 1.0 mA
D

Noise Voltage vs Current
0.01
0.1
1
10
1
10
100
I - DRAIN CURRENT (mA)
e
-
N
OIS
E
V
O
L
T
A
G
E
(
n
V
/
H
z
)
n
V = 15V
DG

D
f = 10 H z
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
f = 100 kHz
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P

-
P
O
W
E
R
DI
S
S
I
P
A
T
I
O
N
(m
W
)
D
o
TO-92
SOT-23
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
Typical Characteristics
(continued)
Switching Turn-On Time
vs Gate-Source Voltage
-10
-8
-6
-4
-2
0
0
5
10
15
20
25
V - GATE-SOURCE CUTOFF VOLTAGE (V)
t
,
t
-
T
URN-
O
N
T
I
M
E
(
n
s
)
r(
O
N
)
GS(off)
d(
O
N
)
V = 3.0V
t APPROX. I INDEPENDENT
DD
D
r
V = 3.0V
T = 25C
GS(off)
A
I = 6.6 mA
V = -12V
D
GS
t
r (ON)
t
d (ON)
2.5 mA
- 6.0V
Switching Turn-Off Time
vs Drain Current
0
2
4
6
8
10
0
20
40
60
80
100
I - DRAIN CURRENT (mA)
t
,
t
-

T
URN-
O
F
F
T
I
M
E
(
n
s
)
D
d
(
OF
F
)
OF
F
T = 25C
V = 3.0V
V = -12V
t DEVICE
V INDEPENDENT
GS(off)
A
DD
GS
d(off)
V = -2.2V
GS(off)
- 4.0V
- 7.5V
t
d(off)
t
(off)
N-Channel Switch
(continued)
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