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Datasheet: J109 (Fairchild Semiconductor)

N-channel Switch

 

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Fairchild Semiconductor
J108 / J109 / J110
J108
J109
J110
N-Channel Switch
This device is designed for analog or digital switching applications where
very low on resistance is mandatory. Sourced from Process 58.
G
S
D
TO-92
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Characteristic
Max
Units
J108 / J109 / J110
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
25
V
V
GS
Gate-Source Voltage
- 25
V
I
GF
Forward Gate Current
10
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
J108 / J109 / J110
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, I
GS
= 0
J108
J109
J110
80
40
10
mA
mA
mA
r
DS(
on
)
Drain-Source On Resistance
V
DS
0.1 V, V
GS
= 0
J108
J109
J110
8.0
12
18
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= - 10
A, V
DS
= 0
- 25
V
I
GSS
Gate Reverse Current
V
GS
= - 15 V, V
DS
= 0
V
GS
= - 15 V, V
DS
= 0, T
A
= 100
C
- 3.0
- 200
nA
nA
V
GS(off)
Gate-Source Cutoff Voltage
V
DS
= 15 V, I
D
= 10 nA
J108
J109
J110
- 3.0
- 2.0
- 0.5
- 10
- 6.0
- 4.0
V
V
V
C
dg(on)
C
sg(off)
Drain Gate & Source Gate On
Capacitance
V
DS
= 0, V
GS
= 0, f = 1.0 MHz
85
pF
C
dg(off)
Drain-Gate Off Capacitance
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
15
pF
C
sg(off)
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= - 10 V, f = 1.0 MHz
15
pF
Typical Characteristics
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
J108 / J109 / J110
N-Channel Switch
(continued)
Common Drain-Source
0
0.4
0.8
1.2
1.6
2
0
20
40
60
80
100
V - DRAIN-SOURCE VOLTAGE (V)
I
-
DRAI
N CURRE
NT
(
m
A
)
DS
D
T = 25C
TYP V = - 5.0 V
GS(off)
A
- 4.0 V
- 5.0 V
- 3.0 V
- 2.0 V
- 1.0 V
V = 0 V
GS
Parameter Interactions
0.1
0.5
1
5
10
5
10
50
100
10
50
100
500
1,000
V - GATE CUTOFF VOLTAGE (V)
r
-
DRAI
N "
O
N"
RE
S
I
S
T
ANCE
GS (OFF)
DS
I @ V = 5.0V, V = 0 PULSED
r @ V = 100mV, V = 0
V @ V = 5.0V, I = 3.0 nA
GS(off)
DSS
r
DS
I
DSS
(

)
DS
DS
D
GS
GS
DS
S
I
-
DRA
I
N
CURRE
NT
(
m
A
)
DS
DS
_
_
_
_
_
J108 / J109 / J110
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Common Drain-Source
0
1
2
3
4
5
0
10
20
30
40
50
V - DRAIN-SOURCE VOLTAGE (V)
I
-
DRAI
N
CURRE
NT
(
m
A)
DS
D
- 0.4 V - 0.5 V
- 0.3 V
- 0.2 V
- 0.1 V
V = 0 V
GS
T = 25C
TYP V = - 0.7 V
GS(off)
A
Normalized Drain Resistance
vs Bias Voltage
0
0.2
0.4
0.6
0.8
1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r
-

NO
RM
AL
I
Z
E
D
RE
S
I
S
T
A
NCE
GS
DS
r =
DS
V @ 5.0V, 10

A
GS(off)
r
DS
________
V
GS(off)
V
GS
1 -
GS(off)
Noise Voltage vs Frequency
0.01 0.03
0.1
0.5 1
2
10
100
1
5
10
50
100
f - FREQUENCY (kHz)
e
-
N
OIS
E
V
O
L
T
A
G
E
(
n
V
/
H
z
)
n
V = 10V
BW = 6.0 H z @ f = 10 Hz, 100 Hz
= 0.21 @ f

1.0 kHz
DG
I = 10 mA
D
I = 1.0 mA
D

Switching Turn-On Time
vs Drain Current
0
5
10
15
20
25
0
10
20
30
40
50
I - DRAIN CURRENT (mA)
t
-
T
URN-
O
F
F
T
I
M
E
(
n
s
)
D
OF
F
V = - 8.5V
V = - 5.5V
V = - 3.5V
GS(off)
GS(off)
GS(off)
T = 25C
V = 1.5V
V = - 12V
GS(off)
A
DD
Common Drain-Source
-20
-16
-12
-8
-4
0
10
100
V - GATE-SOURCE VOLTAGE (V)
C (
C
)
-
CAP
A
C
I
T
ANCE
(
p
F
)
GS
ts
C (V = 5.0V)
iss
f = 0.1 - 1.0 MHz
DS
C (V = 0 )
rss
DS
rs
ON
GS(off)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
-10
-8
-6
-4
-2
0
0
2
4
6
8
10
V - GATE-SOURCE CUTOFF VOLTAGE (V)
t
-
T
URN-
O
N
T
I
M
E
(
n
s
)
T = 25C
V = 1.5V
V = - 12V
GS(off)
A
DD
I = 30 mA
D
I = 10 mA
D
J108 / J109 / J110
Typical Characteristics
(continued)
J108 / J109 / J110
N-Channel Switch
(continued)
On Resistance vs Drain Current
1
10
100
1
5
10
50
100
I - DRAIN CURRENT (mA)
r
-

DRAI
N "
O
N"
RE
S
I
S
T
A
NCE
D
DS
V = - 3.0V
GS(off)
25C
(

)
125C
25C
125C
V = - 5.0V
GS(off)
V = 0
GS
- 55C
Output Conductance
vs Drain Current
0.1
1
10
1
10
100
I - DRAIN CURRENT (mA)
g
-
O
U
T
P
UT
CO
NDUCT
ANCE
(
m
h
o
s
)
D
os
V
GS(off)
T = 25C
f = 1.0 kHz
V = 5.0V
DG

A
10V
15V
20V
5.0V
5.0V
10V
15V
20V
- 4.0V
10V
15V
20V
- 2.0V
- 1.0V
Transconductance
vs Drain Current
0.1
1
10
1
10
100
I - DRAIN CURRENT (mA)
g
-
T
R
A
N
S
C
O
NDUCT
A
NCE
(
m
m
h
o
s
)
D
fs
V = - 1.0V
V = - 3.0V
V = - 5.0V
GS(off)
GS(off)
GS(off)
T = 25C
V = 10V
f = 1.0 kHz
A
DG
T = - 55C
T = 25C
T = 125C
A
A
A
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
PO
W
E
R

D
I
SSIP
A
T
I
O
N
(
m
W
)
D
o
TO-92
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