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Datasheet: J106 (Fairchild Semiconductor)

N-Channel Switch

 

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Fairchild Semiconductor
J105 / J106 / J107 / JFTJ105
J105
J106
J107
N-Channel Switch
This device is designed for analog or digital switching applications where
very low On Resistance is mandatory. Sourced from Process 59.
JFTJ105
Absolute Maximum Ratings*
TA = 25C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25C unless otherwise noted
Symbol
Parameter
Value
Units
V
DG
Drain-Gate Voltage
25
V
V
GS
Gate-Source Voltage
- 25
V
I
GF
Forward Gate Current
10
mA
T
J
, T
stg
Operating and Storage Junction Temperature Range
-55 to +150
C
Symbol
Characteristic
Max
Units
J105 / J106 / J107
P
D
Total Device Dissipation
Derate above 25
C
350
2.8
mW
mW/
C
R
JC
Thermal Resistance, Junction to Case
125
C/W
R
JA
Thermal Resistance, Junction to Ambient
357
C/W
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
G
S
D
TO-92
D
S
G
SOT-223
G
J105 / J106 / J107 / JFTJ105
Electrical Characteristics
TA = 25C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
*
Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%
I
DSS
Zero-Gate Voltage Drain Current*
V
DS
= 15 V, I
GS
= 0
J105
J106
J107
500
200
100
mA
mA
mA
r
DS(
on
)
Drain-Source On Resistance
V
DS
0.1 V, V
GS
= 0
J105
J106
J107
3.0
6.0
8.0
V
(BR)GSS
Gate-Source Breakdown Voltage
I
G
= - 10
A, V
DS
= 0
- 25
V
I
GSS
Gate Reverse Current
V
GS
= - 15 V, V
DS
= 0
V
GS
= - 15 V, V
DS
= 0, T
A
= 100
C
- 3.0
- 200
nA
nA
V
GS(off)
Gate-Source Cutoff Voltage
V
DS
= 15 V, I
D
= 10 nA
J105
J106
J107
- 4.5
- 2.0
- 0.5
- 10
- 6.0
- 4.5
V
V
V
C
dg(on)
C
sg(on)
Drain Gate & Source Gate On
Capacitance
V
DS
= 0, V
GS
= 10 V, f = 1.0 MHz
160
pF
C
dg(off)
Drain-Gate Off Capacitance
V
DS
= 0, V
GS
= 10 V, f = 1.0 MHz
35
pF
C
sg(off)
Source-Gate Off Capacitance
V
DS
= 0, V
GS
= 10 V, f = 1.0 MHz
35
pF
Typical Characteristics
Common Drain-Source
Characteristics
0
0.5
1
1.5
2
0
50
100
150
200
V - DRAIN-SOURCE VOLTAGE(V)
I


-
D
R
A
IN

C
U
R
R
E
N
T
(
m
A
)
DS
D
V = 0 V
GS
-1V
-2V
-3V
-4V
-5V
TYP V = -5V
GS(OFF)
T = + 25 C
0
A
Common Drain-Source
Characteristics
0
1
2
3
4
5
0
10
20
30
40
50
V - DRAIN-SOURCE VOLTAGE(V)
I



- DR
A
I
N CU
RR
E
N
T
(m
A
)
D
DS
V = 0 V
GS
TYP V = -0.7V
GS(OFF)
T = + 25 C
0
A
- 0.1V
- 0.2V
-0.4V
- 0.5V
- 0.3V
J105 / J106 / J107 / NDSJ105
N-Channel Switch
(continued)
J105 / J106 / J107 / JFTJ105
Typical Characteristics
(continued)
Capacitance vs Voltage
-20
-15
-10
-5
0
1
5
10
20
V - GATE-SOURCE VOLTAGE (V)
Ci
s
(C
r
s
) - CAP
AC
I
T
ANC
E

(
p
f)
GS
f=0.1-1.0MHz
C ( V = 5 V )
is DS
C ( V = 0 V )
rs
DS
Parameter Interactions
0.1
0.2 0.3
0.5
1
2
3
5
10
1
2
5
10
20
50
100
200
10
20
50
100
200
500
1,000
2,000
V - GATE CUT OFF VOLTAGE (V)
r
-
DR
AI
N "
O
N"
R
E
S
I
S
T
A
N
C
E
(
)
I
-
DR
A
I
N
CU
RRE
NT
(
m
A
)
DS
r @ VDS=100MV, VGS = 0
DS
V @ VDS = 5.0V, ID =3nA
GS(OFF)
DS
r
I
DSS
GS

D
Normalized Drain Resistance
vs Bias Voltage
0
0.2
0.4
0.6
0.8
1
0.5
1
5
10
20
V / V -- NORMALIZED GATE TO SOURCE VOLTAGE (V)
r
--- NO
RM
AL
I
Z
E
D

RE
S
I
S
T
ANCE
GS
GS(OFF)
DS
b
V @5V, 10uA
GS(OFF)
r =
DSb
rDS
---------------
V
1 - ----------
V
GS
GS(OFF)
On Resistance vs
Drain Current
1
2
3
5
10
20
30
50
100
1
5
10
20
I - DRAIN CURRENT (mA)
r
- DR
AI
N

"
O
N"
RE
S
I
S
T
ANC
E

(
)
DS
D
V = 0
GS
V = - 3.0V
GS(OFF)
+125 C
V = - 5.0V
GS(OFF)
+25 C
+125 C
+25 C
- 55 C
0
0
0
0
0
Output Conductance vs
Drain Current
0.1
0.2 0.3
0.5
1
2
3
5
10
1
5
10
20
I - DRAIN CURRENT (mA)
g
-

O
U
T
P
U
T
CO
ND
UC
T
ANC
E
(u
m
h
o
s
)
V
GS(OFF)
-2.0V
-4.0V
-1.0V
V DG = 5.0V
20V
10V
5.0V
5.0V
10V
10V
15V
15V
15V
20V
20V
T = +25 C
f = 1.0 K Hz
A
0
D
os
Transconductance vs
Drain Current
0.1
0.2 0.3
0.5
1
2
3
5
10
1
5
10
20
I - DRAIN CURRENT (mA)
g
-
T
R
AN
S
C
O
N
D
U
C
T
AN
CE

(u
m
h
o
s
)
T = +125 C
V DG = 10. 0V
T = +25 C
f = 1.0 k Hz
D
T = +25 C
A
T = - 55 C
A
A
A
0
0
V = - 1.0V
GS(OFF)
V = - 5.0V
GS(OFF)
V = - 3.0V
GS(OFF)
0
0
fs
N-Channel Switch
(continued)
J105 / J106 / J107 / JFTJ105
Typical Characteristics
(continued)
Noise Voltage vs
Frequency
0.01
0.03
0.1
0.3
1
3
10
30
100
0
5
10
15
20
f - FREQUENCY (k Hz)
e
n
-
N
O
I
SE V
O
L
T
A
G
E
(
n
V/
)
Hz
V = 10 V
BW = 6.0 Hz @ f = 10Hz, 100 Hz
= 0.2f @ f > 1.0 k Hz
DG
I = 1 mA
I = 10 mA
D
D
N-Channel Switch
(continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P
-
PO
W
E
R

D
I
SSIP
A
T
I
O
N
(
m
W
)
D
o
TO-92
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