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Datasheet: M2006C-SO20-300 (No company)

PIR Motion Detector

 

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MOS
(PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
M2006C
PIR Motion Detector
www.mos.co.za
Rev.
1.1
General Description___________

The M2006C integrated circuit combines all required
functions for a single chip Passive Infra Red (PIR)
motion detector.

A relay and a LED output are provided for interfacing to
an occupancy detect or alarm system.

One or two PIR sensors connect directly to the PIR
inputs. The pull-down resistors and DC decoupling
circuitry are integrated on chip. The PIR signal is
converted to a 15 bit digital value.

The parameters for sensitivity, pulse count and timing
are set by means of connecting the corresponding
inputs to VDD, VSS or leaving them open.
The voltage level on the temperature compensation
input is converted to a digital value with 4 bit resolution.

All signal processing is performed digitally.
Applications_________________
PIR motion detection
Intruder detection
Occupancy detection
Motion sensor lights
Features_____________________
Digital signal processing
On chip supply regulator with wide operating voltage
range
Low power consumption
Temperature compensation input
Differential PIR sensor input
Selectable relay output polarity
Selectable pulse count and timing algorithm for
motion detection




Single Sensor Application Circuit________________________________

C1
Supply
0V
VDD
NPIRIN
13
VSSA
14
PT1
4
DP0
17
DP1
16
LED
20
VB
10
VDD
2
PT0
5
TEST
9
RELAY
19
OSC
1
DT0
7
DT1
6
SENS
3
VDDA
11
VSS
18
RPOL
8
TCOMP
15
PIRIN
12
U1
M2006C
RE1
C2
Alarm
Alarm
P ulse C ount
Thre shold/Sensitivity
Near
D1
R1
Far
Time Window
L1
R2
S2
DT0
DT1
PT0
PT1
DP0
DP1
C3
IRA1
VSS
VSS
R3
R4
R5
VDD
NTC
N1


MOS
(PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
M2006C
PIR Motion Detector
www.mos.co.za
Page 2 of 5
Rev. 1.1
Electrical Characteristics_______________________________________

Absolute Maximum Ratings
Parameter
Symbol Min Max Unit Remarks
Voltage on pins VB, RELAY, LED
V
DD
-0.3 19 V
Current into any pin
-100
100
mA
One pin at a time
Storage Temperature
T
st
-45
125
C
Table 1: Electrical Characteristics (Stresses beyond those listed above may cause permanent damage to the device. Exposure to
absolute maximum ratings may affect the device reliability. ESD protection: all pins will be able to withstand a discharge of a 100pF
capacitor charged to 1.6kV through a 1500 series resistor. Test method: MIL-STD-883D method 3015).
Operating Conditions
(T=25
C, VDD=5V, unless stated otherwise)
Parameter Symbol
Min
Typ
Max
Unit
Remarks
Temperature
Operating temperature range
-25
70
C
Regulator
Supply voltage
V
B
4.8 18 V
Supply current
I
DD
200
A
V
B
=12V
Outputs unloaded
Regulator output voltage
V
DD
3.6 4.4 V
Digital Inputs, Schmitt Triggers (DP0/1, PT0/1, DT0/1, SENS, TEST, RPOL)
Input low voltage
V
IL
20
%V
DD
Input high voltage
V
IH
80 %V
DD
Pull down current on TEST
50
A
input to V
DD
Digital Outputs
RELAY sink capability (open drain)
I
OL
25 mA
V
OL
<1V
LED sink capability (open drain)
I
OL
5 mA
V
OL
<1V
TCOMP Input
Input voltage range
0
V
DD
Input leakage current
-1
1
A
PIRIN / NPIRIN Inputs
PIRIN /NPIRIN input resistance to V
SS
60
k
PIRIN input DC voltage range
0.2
1.5
V
PIRIN input AC voltage
5
mV
Peak-to-peak
Oscillator and Filter
LPF cutoff frequency
7
Hz
HPF cutoff frequency
0.44
Hz
Oscillator frequency
F
CLK
64
kHz
R1 as per table 7
Table 2: Operating Conditions













MOS
(PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
M2006C
PIR Motion Detector
www.mos.co.za
Page 3 of 5
Rev. 1.1
Detailed Description___________________________________________
In put A mplifier
Band Pass
Filter
Voltage
O scillator
Regu lator
A larm Event
A /D C onver ter
PT0
DP0
SENS
RELA Y
LED
O SC
TEST
VB
PIRIN
VDDA
VSSA
VSSA
VDD
VSS
DT0
DT1
DP1
PT1
Pr ocessor
Temperature
C ompensation
TC O MP
RPO L
O utp ut
Driver
NPIRIN
VSSA
Voltage Regulator
The on-chip series regulator can accept a large variety
of supply voltages, and generates a stable 4V supply
for the internal circuitry. The V
DD
pin requires a bypass
capacitor to V
SS
.
Oscillator
The IC contains an on chip low power oscillator. The
frequency is set to about 64kHz by selecting the correct
resistor between OSC and VDD. The timing signals and
cutoff frequencies of the digital filters are derived from
this frequency.
PIR Sensor Input
A differential input stage allows for up to 2 PIR sensors
to be connected. The PIRIN and NPIRIN inputs have an
internal pull-down resistor. The analog to digital
converter generates a digital signal from the voltage
level measured between the PIRIN and NPIRIN pins.
Band-Pass Filter
A 2nd order low-pass filter with a cut-off frequency of
3.5Hz eliminates unwanted higher frequency
components. This signal is then passed to a 2
nd
order
high pass filter with a 0.5Hz cut-off frequency.
Alarm Event Processor
The signal from the band pass filter is firstly rectified.
When the signal level exceeds the selected sensitivity
threshold, an internal pulse is generated and the open
drain LED output transistor is switched on. The LED
output remains activated while the signal is above the
selected sensitivity threshold.



If immediate alarm mode (alarm on 1 pulse count) is
selected, then the RELAY output is activated on every
pulse, for the duration, selected by DT0 and DT1.

If TRUE-ROLL
TM
alarm mode (alarm on more than 1
pulse) is selected, a minimum number of pulses,
selected with DT1 and DT0, would have to appear,
within the selected TRUE-ROLLTM time window.

The RELAY output will remain activated as long as the
alarm condition is present. The RELAY activation time
is the same as the TRUE-ROLL
TM
time window.

The polarity of the relay output (i.e. active high or active
low), can be selected with the RPOL pin.
RPOL Relay
Output
0 Active
low
1 Active
high
Table 3: Relay output polarity

The pins to select the sensitivity threshold, the TRUE-
ROLL
TM
time window and the PULSE count are
typically hard wired by the PIR motion detector
manufacturer. The SENS input allows for a jumper,
which offers a sensitivity adjustment on site.

The conditions required to raise an alarm, are
controlled by the following digital inputs. These inputs
must be connected to VDD (`1'), VSS (`0') or left open
(Z), as indicated in table 4.



MOS
(PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
M2006C
PIR Motion Detector
www.mos.co.za
Page 4 of 5
Rev. 1.1
Pin Name
Description
PT1 PT0

0 0
0 Z
0 1
Z 0
Z Z
Z 1
1 0
1 Z/1
Selects the PIR controller's
sensitivity threshold.
x 1
most sensitive
x 2
x 4
x 8
x 16
x 32
x 64
x 128
least sensitive
DP1 DP0

0 0
0 1
1 0
1 1
Selects the amount of pulses
required for an alarm condition.
1 immediate alarm mode
2 TRUE-ROLL
TM
3 alarm
4 mode
DT1 DT0

0 0
0 1
1 0
1 1
Selects the TRUE-ROLL
TM
time
window
2 s
4 s
8 s
16 s

SENS
When connected to V
DD
, the
currently selected threshold is
doubled
Table 4: Alarm event processor input settings

TCOMP: Temperature compensation input pin. A
temperature dependent resistor network may be
connected to this pin to generate voltages between
VDD*16/128 and VDD*31/128. The voltage on this pin
must decrease as the temperature increases. At 37C,
the voltage should be between VDD*19/128 and
VDD*20/128. Internally, a TCOMP factor is selected,
based on this pin voltage. This factor is multiplied with
the sensitivity threshold. Table 5 shows the
dependency of the pin voltage and the TCOMP factor
used by the alarm event processor.
Pin
voltage/
V
DD
TCOMP
factor
Pin
voltage/
V
DD
TCOMP
Factor
<16/128 7/8 24/128 8/8
17/128 6/8 25/128 9/8
18/128 5//8 26/128 10/8
19/128 4/8 27/128 11/8
20/128 4/8 28/128 12/8
21/128 5/8 29/128 13/8
22/128 6/8 30/128 14/8
23/128 7/8 >31/128
15/8
Table 5: Temperature compensation factor





Example of TRUE-ROLL
TM
time window set to 4s and pulse count to 3.


















PIR
LED
WINDOW
RELAY
4s
4s
4s
4s
4s
MOS
(PTY) LTD.
Microsystems On Silicon
Member of ELMOS Semiconductor AG
M2006C
PIR Motion Detector
www.mos.co.za
Page 5 of 5
Rev. 1.1
Device Pin Out________________________________________________
Pin No.
Name
Description
1
OSC
Oscillator frequency setting
2 V
DD
Regulated
supply
voltage
3 SENS
Range
select
4 PT1
Sensitivity
selection
5 PT0
Sensitivity
selection
6 DT1
TRUE-ROLL
TM
time window select
7 DT0
TRUE-ROLL
TM
time window select
8
RPOL
RELAY Pin polarity selection
9 TEST
Reserved,
connect
to
V
SS
10
VB
Unregulated supply voltage
11 V
DDA
Regulated supply voltage, only connect PIR element to this pin
12
PIRIN
PIR sensor input
13
NPIRIN
Negative PIR sensor input
14 V
SSA
Negative supply voltage, only connect PIR element to this pin
15 TCOMP
Temperature
Compensation
Input
16
DP1
Pulse count selector
17
DP0
Pulse count selector
18 V
SS
Negative
supply
voltage
19
RELAY
Relay Output (open drain)
20
LED
LED Output (open drain)
Table 6: Device Pin Out
Component Values____________________________________________
Designator Description
R1 390k
R2 1.2k
R3 180k
R4 33k
R5 18k
N1 47k NTC
C1 10F/25V,
electrolytic
C2, C3
820nF, ceramic
D1
1N4007, optional protection diode
IRA
LHI 878, PIR sensor
Table 7: Component Values for Application Circuit











Contact Information___________
Microsystems On Silicon (PTY) Ltd.
Pretoria, South Africa
Tel: +27 (12) 348 8367
Fax: +27 (12) 348 1790
Email: sales@mos.co.za
Visit our website for the latest information











Ordering Information__________

M2006C-DIP20 (20 pin Dual-in-line plastic)
M2006C-SO20-300 (20 pin Surface mount, 300 mil)

Other packages are available on request.
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