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Datasheet: L34F3BT (No company)

T-1 Infra-red Emitting Diodes

 

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SPEC NO:CDA0542
REV NO: V.1
DATE: OCT/29/2001
PAGE: 1 OF 4
APPROVED: J.LU
CHECKED:
DRAWN:X.Q.ZHENG
L34F3C
L34F3BT
L34SF4C
L34SF4BT
T-1 (3mm) INFRA-RED EMITTING DIODES
Package Dimensions
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
0
.25(0.01") unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subject to change without notice.
Description
F3 Made with Gallium Arsenide Infrared Emitting diodes.
SF4 Made with Gallium Aluminum Arsenide Infrared
Emitting diodes.
Features
!
MECHANICALLY AND SPECTRALLY MATCHED
TO THE L32P3C PHOTOTRANSISTOR.
!
BOTH WATER CLEAR LENS AND BLUE TRANSPARENT
LENS AVAILABLE HIGH POWER OUTPUT.
SPEC NO:CDA0542
REV NO: V.1
DATE: OCT/29/2001
PAGE: 2 OF 4
APPROVED: J.LU
CHECKED:
DRAWN:X.Q.ZHENG
Electrical / Optical Characteristics at T
)
=25


C
Absolute Maximum Ratings at T
)
=25


C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 4mm below package base.
Selection Guide
Note:
1.
1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
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SPEC NO:CDA0542
REV NO: V.1
DATE: OCT/29/2001
PAGE: 3 OF 4
APPROVED: J.LU
CHECKED:
DRAWN:X.Q.ZHENG
L34F3C, L34F3BT
SPEC NO:CDA0542
REV NO: V.1
DATE: OCT/29/2001
PAGE: 4 OF 4
APPROVED: J.LU
CHECKED:
DRAWN:X.Q.ZHENG
L34SF4C, L34SF4BT
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