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Datasheet: L239 (No company)

Fast Recovery Epitaxial Diode (fred)

 

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2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
200
200
DSEI 60-02A
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
98
A
I
FAVM
x
T
C
= 85
C; rectangular, d = 0.5
69
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
800
A
I
FSM
T
VJ
= 45
C;
t = 10 ms (50 Hz), sine
600
A
t = 8.3 ms (60 Hz), sine
650
A
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
540
A
t = 8.3 ms (60 Hz), sine
580
A
I
2
t
T
VJ
= 45
C
t = 10 ms (50 Hz), sine
1800
A
2
s
t = 8.3 ms (60 Hz), sine
1770
A
2
s
T
VJ
= 150
C; t = 10 ms (50 Hz), sine
1460
A
2
s
t = 8.3 ms (60 Hz), sine
1410
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+150
C
P
tot
T
C
= 25
C
150
W
M
d
Mounting torque
0.8...1.2
Nm
Weight
6
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
C
V
R
= V
RRM
50
m
A
T
VJ
= 25
C
V
R
= 0.8 V
RRM
40
m
A
T
VJ
= 125
C
V
R
= 0.8 V
RRM
11
mA
V
F
I
F
= 60 A;
T
VJ
= 150
C
0.88
V
T
VJ
= 25
C
1.08
V
V
T0
For power-loss calculations only
0.70
V
r
T
T
VJ
= T
VJM
4.0
m
W
R
thJC
0.75
K/W
R
thCK
0.25
K/W
R
thJA
35
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V; T
VJ
= 25
C
35
50
ns
I
RM
V
R
= 100 V;
I
F
= 60 A; -di
F
/dt = 200 A/
m
s
8
10
A
L
0.05
m
H; T
VJ
= 100
C
DSEI 60
I
FAVM
= 69 A
V
RRM
= 200 V
t
rr
= 35 ns
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Fast Recovery
Epitaxial Diode (FRED)
A
C
Features
q
International standard package
JEDEC TO-247 AD
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Anti saturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
q
Operating at lower temperature or
space saving by reduced cooling
TO-247 AD
C
C
A
A = Anode, C = Cathode
036
2000 IXYS All rights reserved
2 - 2
DSEI 60, 200V
200
600
1000
0
400
800
0
10
20
30
40
50
60
70
0.001
0.01
0.1
1
10
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
V
FR
di
F
/dt
V
200
600
1000
0
400
800
5
15
25
0
10
20
30
10
100
1000
0.0
0.2
0.4
0.6
0.8
0.0
0.4
0.8
1.2
0
20
40
60
80
100
120
140
160
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
C
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
DSEI 60-02
A/
m
s
A/
m
s
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
I
F
= 100A
Fig. 3 Typ. peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Typ. reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
=100C
T
VJ
=25C
T
VJ
= 100C
V
R
= 100V
T
VJ
= 100C
V
R
= 100V
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ peak forward voltage
V
FR
and t
fr
versus di
F
/dt
I
F
=35A
I
F
=70A
I
F
=140A
t
fr
V
FR
Fig. 7 Transient thermal impedance junction to case
839
T
VJ
=150C
I
F
= 35A
I
F
= 70A
I
F
=140A
I
F
= 35A
I
F
= 70A
I
F
=140A
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780
0.800
B
20.80 21.46
0.819
0.845
C
15.75 16.26
0.610
0.640
D
3.55
3.65
0.140
0.144
E
4.32
5.49
0.170
0.216
F
5.4
6.2
0.212
0.244
G
1.65
2.13
0.065
0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040
0.055
K
10.8
11.0
0.426
0.433
L
4.7
5.3
0.185
0.209
M
0.4
0.8
0.016
0.031
N
2.2
2.54
0.087
0.102
Dimensions
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