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Datasheet: D2012 (No company)

Si NPN TRANSISTOR

 

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No company
YOUDA TRANSISTOR
D2012
Si NPN TRANSISTOR--D2012

DESCRIPTION AND FEATURES

*Collector-Emitter voltage: BV
CBO
= 60V
*Collector current up to 3A
*High h
FE
linearity
PIN CONFIGURATIONS
PIN
SYMBOL
1
Emitter
2
Collector
3
Base
ABSOLUTE MAXIMUM RATINGS (Tamb=25)
PARAMETER SYMBOL
VALUE
UNIT
Collector-Base Voltage
BV
CBO
60 V
Collector-Emitter Voltage
BV
CEO
50 V
Emitter-Base Voltage
BV
EBO
7 V
Tcase=25
30 W
Collector Dissipation
Tamb=25
P
CM
1.5 W
DC I
CM
3 A
Collector Current
Pulse Icp
7
A
Base Current
I
B
0.6 A
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55+150

ELECTRICAL CHARACTERISTICS
(Tamb=25,all voltage referenced to GND Unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
I
CBO
Vc
B
=50V, I
E
=0
100
nA
Emitter Cut-Off Current
I
EBO
V
EB
=5V, I
C
=0
100
nA
h
FE
1 Vc
E
=5V, I
C
=20mA 30 200
DC Current Gain
h
FE
2 Vc
E
=5V, I
C
=0.5A 100 400
Collector-Emitter Saturation Voltage
V
CE(sat)
Ic=3A,
I
B
=0.3A
0.3
0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
Ic=2A,
I
B
=0.2A
1.0
2.0
V
Current Gain Bandwidth Product
f
T
Vc
E
=5V, I
C
=0.1A 5 MHz
Output Capacitance
Cob
Vc
B
=10V,
I
E
=0,f=1MHz
80 pF

CLASSIFICATION OF h
FE
RANK Q
P
E
RANGE
100200 160320 200400



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