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Datasheet: 9014B (No company)

Silicon NPN Epitaxial Transistor

 

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May.2004 Version :0.0 Page 1 of 1
9014B Silicon NPN Epitaxial Transistor
Description :The 9014B is designed for use in pre-amplifier of low level and low noise
Features: Excellent h
FE
Linearity
Complementary to 9015B
Chip Appearance
Chip Size
350um×350um
Chip Thickness
210±20um
Base
110um×110um
Bonding Pad Size
Emitter
100um×100um
Front Metal
Al
Backside Metal
Au(As)
Scribe line width
40um
Wafer Size
6 inch
Electrical Characteristics( Ta=25)
Characteristic
Symbol Test
Condition Min
Max
Unit
Collector Cutoff Current
I
CBO
V
CB
=40V, I
E
=0
0.1
uA
Emitter Cutoff Current
I
EBO
V
EB
=5V, I
C
=0
0.1
uA
Collector-Base Breakdown Voltage
BV
CBO
I
C
=0.1mA,
50
V
Collector-Emitter Breakdown Voltage
BV
CEO
I
C
=1mA,
45
V
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=0.1mA,
5.0
V
DC Current Gain
h
FE
V
CE
=5V, I
C
=1mA 150
600
Collector Saturation Voltage
V
CE
(sat)
I
C
=100mA,I
B
=5mA 0.30
V
9014B
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