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Datasheet: BTC1510E3 (Cystech Electonics Corp.)

Npn Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C652E3
Issued Date : 2004.02.01
Revised Date : 2004.06.03
Page No. : 1/5
BTC1510E3
CYStek Product Specification


NPN Epitaxial Planar Transistor
BTC1510E3
Description
The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.

Features:
High BV
CEO
Low V
CE(SAT)
High current gain
Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit Outline














TO-220AB

BTC1510E3
BBase
CCollector
EEmitter
B
C
E
R18k R2120
B C E
CYStech Electronics Corp.

Spec. No. : C652E3
Issued Date : 2004.02.01
Revised Date : 2004.06.03
Page No. : 2/5
BTC1510E3
CYStek Product Specification


Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
150
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
I
C(DC)
10
Collector Current
I
C(Pulse)
15 *1
A
Pd(T
A
=25)
2
Power Dissipation
Pd(T
C
=25)
65
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1. Single Pulse Pw=100ms
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
150 - - V
I
C
=100A, I
E
=0
BV
CEO
150 - - V
I
C
=1mA, I
B
=0
I
CEO
- -
200
A
V
CE
=150V, I
E
=0
I
CBO
- -
200
A
V
CB
=150V, I
E
=0
I
EBO
- - 2
mA
V
EB
=5V, I
C
=0
*V
CE(sat)
1 - - 2 V
I
C
=5A, I
B
=10mA
*V
CE(sat)
2
-
-
3
V
I
C
=10A, I
B
=100mA
*V
CE(sat)
3
-
-
1.5
V
I
C
=5A, I
B
=2.5mA
*V
BE(sat)
-
-
2
V
I
C
=5A, I
B
=5mA
*V
BE(on)
1
-
-
2.8
V
V
CE
=3V, I
C
=5A
*V
BE(on)
2
-
-
4.5
V
V
CE
=3V, I
C
=10A
*V
FEC
- - 3 V
I
C
=5A
*h
FE
1 2 - 20 K
V
CE
=3V, I
C
=5A
*h
FE
2
100
- - -
V
CE
=3V, I
C
=10A
*Pulse Test : Pulse Width
380s, Duty Cycle
2%













CYStech Electronics Corp.

Spec. No. : C652E3
Issued Date : 2004.02.01
Revised Date : 2004.06.03
Page No. : 3/5
BTC1510E3
CYStek Product Specification


Characteristic Curves
Current Gain vs Collector Current
10
100
1000
10000
100000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
25
125
75
HFE@VCE=3V
Saturation Voltage vs Collector Current
100
1000
10000
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(m
V)
VCE(SAT)@IC=250IB
125
75
25
Saturation Voltage vs Collcetor Current
100
1000
10000
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(m
V)
VCE(SAT)@IC=2000IB
25
75
125
Saturation Voltage vs Colltctor Current
100
1000
10000
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(m
V)
VCE(SAT)@IC=500IB
25
75
125
Saturation Voltage vs Collcetor Current
100
1000
10000
100
1000
10000
Collector Current---IC(mA)
On Voltage---(m
V)
VBE(ON)@VCE=3V
25
75
125
Power Derating Curve
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature---T
A
()
Power Dissipation---P
D
(W)

CYStech Electronics Corp.

Spec. No. : C652E3
Issued Date : 2004.02.01
Revised Date : 2004.06.03
Page No. : 4/5
BTC1510E3
CYStek Product Specification


Power Derating Curve
0
10
20
30
40
50
60
70
0
50
100
150
200
Case Temperature---Tc()
Power Dissipation---P
D
(W)
CYStech Electronics Corp.

Spec. No. : C652E3
Issued Date : 2004.02.01
Revised Date : 2004.06.03
Page No. : 5/5
BTC1510E3
CYStek Product Specification


TO-220AB Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197
0.2949 5.58 7.49 I
-
*
0.1508
-
*
3.83
B 0.3299
0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453
0.0547 1.15 1.39 N
-
*
0.1000
-
*
2.54
E 0.0138
0.0236 0.35 0.60 O 0.5000
0.5618 12.70 14.27
G 0.3803
0.4047 9.66 10.28 P 0.5701
0.6248 14.48 15.87
H -
*
0.6398
-
*
16.25
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Marking:
C1510
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