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Datasheet: BTB1412J3 (Cystech Electonics Corp.)

Low Vcesat Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 1/4
BTB1412J3
CYStek Product Specification
Low Vcesat PNP Epitaxial Planar Transistor
BTB1412J3
Features
Low V
CE
(sat), V
CE
(sat)=-0.6 V (typical), at I
C
/ I
B
= -4A / -0.1A
Excellent DC current gain characteristics
Complementary to BTD2118J3

Symbol Outline



Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-20
V
Collector-Emitter Voltage
V
CEO
-15
V
Emitter-Base Voltage
V
EBO
-6
V
I
C(DC)
-5
Collector Current
I
C(Pulse)
-10 *1
A
Pd(T
A
=25)
1
Power Dissipation
Pd(T
C
=25)
10
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1
.
Single Pulse Pw=10ms
BTB1412J3
TO-252

BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.

Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 2/4
BTB1412J3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
-20 - - V
I
C
=-50A, I
E
=0
BV
CEO
-15 - - V
I
C
=-1mA, I
B
=0
BV
EBO
-6 - - V
I
E
=-50A, I
C
=0
I
CBO
- -
-0.5
A
V
CB
=-15V, I
E
=0
I
EBO
- -
-0.5
A
V
EB
=-5V, I
C
=0
*V
CE(sat)
- - -1.0 V
I
C
=-4A, I
B
=-0.1A
*h
FE
120 - 560 -
V
CE
=-2V, I
C
=-0.5A
f
T
-
120
-
MHz
V
CE
=-6V, I
C
=-50mA, f=30MHz
Cob - 60
-
pF
V
CB
=-20V, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
Rank Q R S
Range 120~270 180~390 270~560
CYStech Electronics Corp.

Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 3/4
BTB1412J3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HF
E
VCE=1V
VCE=2V
VCE=5V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---VCE(SAT)(m
V)
IC=10IB
IC=20IB
IC=40IB
Saturation Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---VBE(SAT)(m
V)
IC=10IB
Power Derating Curve
0
2
4
6
8
10
12
0
50
100
150
200
Case Temperature---TC( )
Power Dissipation---PD(W)
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
200
Ambient Temperature---TA( )
Power Dissipation---PD(W
)
CYStech Electronics Corp.

Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 4/4
BTB1412J3
CYStek Product Specification
TO-252 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.0177
0.0217 0.45 0.55 G 0.0866 0.1102 2.20 2.80
B 0.0650
0.0768
1.65 1.95 H - *0.0906 - *2.30
C
0.0354
0.0591
0.90 1.50 I - 0.0354 - 0.90
D
0.0177
0.0236
0.45 0.60 J - 0.0315 - 0.80
E 0.2520
0.2677 6.40 6.80 K 0.2047 0.2165 5.20 5.50
F 0.2125
0.2283 5.40 5.80 L 0.0551 0.0630 1.40 1.60
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Marking:
B
A
C
E
H
I
J
K
3
2
1
D
F
G
L
Style: Pin 1.Base 2.Collector 3.Emitter
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
B1412
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