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Datasheet: BTB1386N3 (Cystech Electonics Corp.)

Low Vce(sat) Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 1/4
BTB1386N3
CYStek Product Specification
Low V
CE(sat)
PNP Epitaxial Planar Transistor
BTB1386N3
Features
Excellent DC current gain characteristics
Low Saturation Voltage, V
CE(sat)
=-0.25V(typ)

Applications
Low frequency amplifier
Driver

Symbol
Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-15 V
Collector-Emitter Voltage
V
CEO
-12 V
Emitter-Base Voltage
V
EBO
-6 V
Collector Current(DC)
I
C
-4
Collector Current(Pulsed)(
Note 1)
I
CP
-8
A
Power Dissipation
Pd
225
mW
Thermal Resistance, Junction to Ambient
R
JA
556
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note 1: Single pulse, Pw10ms, Duty Cycle30%.
BTB1386N3
SOT-23
BBase
CCollector
EEmitter
CYStech Electronics Corp.

Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 2/4
BTB1386N3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
-15 -
- V
I
C
=-50A
BV
CEO
-12 -
- V
I
C
=-1mA
BV
EBO
-6 - - V
I
E
=-50A
I
CBO
- -
-100
nA
V
CB
=-15V
I
EBO
- -
-100
nA
V
EB
=-5V
*V
CE(sat)
- - -0.25 V
I
C
=-1A, I
B
=-50mA
*h
FE
1
200
- - -
V
CE
=-2V, I
C
=-20mA
*h
FE
2
180 - 820 -
V
CE
=-2V, I
C
=-500mA
*h
FE
3
150
- - -
V
CE
=-2V, I
C
=-2A
f
T
-
250
-
MHz
V
CE
=-2V, I
C
=-200mA, f=100MHz
Cob - 60 - pF
V
CB
=-10V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
2
Rank R S T
Range 180~390
270~560
390~820
















CYStech Electronics Corp.

Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 3/4
BTB1386N3
CYStek Product Specification
Characteristic Curves
Current gain vs Collector current
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Current gain---HFE
VCE = 2V
Saturation voltage vs Collector current
1
10
100
1000
1
10
100
1000
10000
Collector current---IC(mA)
Saturation voltage---(mV)
IC=40IB
IC=20IB
IC=10IB
VCE(sat)
Saturation votlage vs Collector current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(sat)@IC=20IB
On voltage vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(mW)
CYStech Electronics Corp.

Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 4/4
BTB1386N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.



H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Base 2.Emitter 3.Collector
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
BH
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