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Datasheet: BTB1236AT3 (Cystech Electonics Corp.)

Silicon Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 1/4
BTB1236AT3
CYStek Product Specification

Silicon PNP Epitaxial Planar Transistor
BTB1236AT3


Description
High BV
CEO
High current capability
Pb-free package

Symbol Outline

Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-180 V
Collector-Emitter Voltage
V
CEO
-160 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current (DC)
I
C
-1.5 A
Collector Current (Pulse)
I
CP
-3 A
Base Current
I
B
0.5 A
Power Dissipation @T
A
=25
1
Power Dissipation @T
C
=25
P
D
20
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
BTB1236AT3
TO-126
BBase
CCollector
EEmitter
E C B
CYStech Electronics Corp.

Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 2/4
BTB1236AT3
CYStek Product Specification

Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BV
CBO
-180 -
-
V I
C
=-50
A, I
E
=0
BV
CEO
-160 -
-
V I
C
=-1mA, I
B
=0
BV
EBO
-5 - - V
I
E
=-50
A, I
C
=0
I
CBO
- - -1
A
V
CB
=-160V, I
E
=0
I
EBO
- - -1
A
V
EB
=-4V, I
C
=0
*V
CE(sat)
- - -0.6 V
I
C
=-1A, I
B
=-100mA
*V
BE(on)
- - -1.5 V
V
CE
=-5V, I
C
=-150mA
h
FE
1 60 - 200 -
V
CE
=-5V, I
C
=-100mA
h
FE
2
30 - - -
V
CE
=-5V, I
C
=-500mA
f
T
-
140
-
MHz
V
CE
=-5V, I
C
=-150mA
Cob - 27 - pF
V
CB
=-10V, I
E
=0, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification of h
FE
1
Rank K P Q
Range 60~120 82~190 120~200
















CYStech Electronics Corp.

Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 3/4
BTB1236AT3
CYStek Product Specification

Characteristic Curves
Current Gain vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
VCE=5V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage-(mV)
VCE(SAT)@IC=10IB
On Voltage vs Collector Current
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(ON)@VCE=5V
Power Derating Curve
0
0.2
0.4
0.6
0.8
1
1.2
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
Power Derating Curve
0
5
10
15
20
25
0
50
100
150
200
Case Temperature---TC()
Power Dissipation---PD(W)
CYStech Electronics Corp.

Spec. No. : C854T3
Issued Date : 2005.08.23
Revised Date :
Page No. : 4/4
BTB1236AT3
CYStek Product Specification

TO-126 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
1
-
*3
-
*3
F 0.0280
0.0319 0.71 0.81
2
-
*3
-
*3
G 0.0480
0.0520 1.22 1.32
3
-
*3
-
*3
H 0.1709
0.1890 4.34 4.80
4
-
*3
-
*3
I 0.0950
0.1050 2.41 2.66
A 0.1500
0.1539 3.81 3.91 J 0.0450
0.0550 1.14 1.39
B 0.2752
0.2791 6.99 7.09 K 0.0450
0.0550 1.14 1.39
C 0.5315
0.6102 13.50 15.50 L
- *0.0217 - *0.55
D 0.2854
0.3039 7.52 7.72 M 0.1378
0.1520 3.50 3.86
E
0.0374
0.0413
0.95
1.05
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
C
F
D
E
H
1 2 3
K
J
I
3
4
L
M
1
2
G
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-126 Plastic Package
CYStek Package Code: T3
Marking:
B1236A
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