HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: BTB1132M3 (Cystech Electonics Corp.)

Low Vcesat Pnp Epitaxial Planar Transistor

 

Download: PDF   ZIP
Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 1/4
BTB1132M3
CYStek Product Specification


Low Vcesat PNP Epitaxial Planar Transistor
BTB1132M3
Features
ˇ
Low V
CE
(sat), V
CE
(sat)=-0.15V (typical), at I
C
/ I
B
=- 0.5A /- 50mA
ˇ
Complementary to BTD1664M3
Symbol Outline

Absolute Maximum Ratings
(Ta=25
°
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current(DC)
IC
-1
A
Collector Current(Pulse)
ICP
-2.5 *1
A
0.6
Power Dissipation
Pd
2 *2
W
Junction Temperature
Tj
150
°
C
Storage Temperature
Tstg
-55~+150
°
C
Note : *1 Single pulse, Pw=10ms
*2 When mounted on a 40 × 40 × 0.7mm ceramic board.
SOT-89
BTB1132M3
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.

Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 2/4
BTB1132M3
CYStek Product Specification


Characteristics
(Ta=25
°
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BVCBO -40 -
- V
IC=-50ľA,
IE=0
BVCEO -32 -
- V
IC=-1mA,
IB=0
BVEBO -5 - - V
IE=-50ľA,
IC=0
ICBO - - -0.5
ľA
VCB=-20V,IE=0
IEBO - - -0.5
ľA
VEB=-4V,IC=0
*VCE(sat) - -0.15 -0.5 V
IC=-500mA,
IB=-50mA
*hFE 82 - 390 -
VCE=-3V,
IC=-0.1A
fT
-
150
-
MHz
VCE=-5V, IC=-50mA, f=100MHz
Cob - 20
30
pF
VCB=-10V,
f=1MHz
*Pulse Test : Pulse Width
380us, Duty Cycle
2%
Classification of hFE
Rank P Q R
Range 82~180
120~270
180~390
CYStech Electronics Corp.

Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 3/4
BTB1132M3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---HFE
HFE@VCE=3V
Saturation Voltage vs Collector Current
1
10
100
1000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBESAT@IC=10IB
Power Derating Curves
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
See note 2 on page 1












CYStech Electronics Corp.

Spec. No. : C313M3
Issued Date : 2003.05.13
Revised Date :
Page No. : 4/4
BTB1132M3
CYStek Product Specification
SOT-89 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1732
0.1811 4.40 4.60 F 0.0583
0.0598 1.48 1.527
B 0.1594
0.1673 4.05 4.25 G 0.1165 0.1197 2.96 3.04
C 0.0591
0.0663 1.50 1.70 H 0.0551 0.0630 1.40 1.60
D 0.0945
0.1024 2.40 2.60 I 0.0138 0.0161 0.35 0.41
E 0.01417
0.0201 0.36 0.51
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
ˇ
Lead: 42 Alloy ; solder plating
ˇ
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
ˇ
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
ˇ
CYStek reserves the right to make changes to its products without notice.
ˇ
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
ˇ
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.




Marking:
BK*
E
F
G
C
B
A
I
D
H
3
2
1
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
Style: Pin 1. Base 2. Collector 3. Emitter
© 2018 • ICSheet
Contact form
Main page