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Datasheet: BTA1952E3 (Cystech Electonics Corp.)

Low Vcesat Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 1/4
BTA1952E3
CYStek Product Specification
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952E3
Features
Low V
CE
(sat), V
CE
(sat)=-0.5 V (typical), at I
C
/ I
B
= -3A / -0.15A
Excellent DC current gain characteristics
Wide SOA


Symbol Outline


Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-100
V
Collector-Emitter Voltage
V
CEO
-80
V
Emitter-Base Voltage
V
EBO
-5
V
I
C
(DC) -5
Collector Current
I
C
(Pulse)
-8 *1
A
Base Current
I
B
-1
A
Pd(T
A
=25)
2
Power Dissipation
Pd(T
C
=25)
40
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
Note : *1
.
Single Pulse Pw=10ms
BTA1952E3
TO-220AB
BBase
CCollector
EEmitter
B C E
CYStech Electronics Corp.

Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 2/4
BTA1952E3
CYStek Product Specification
Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CEO
-80 - - V
I
C
=-10mA, I
B
=0
I
CBO
- -
-10
A
V
CB
=-100V, I
E
=0
I
EBO
- -
-10
A
V
EB
=-5V, I
C
=0
*V
CE(sat)
- - -0.6 V
I
C
=-1A, I
B
=-10mA
*V
CE(sat)
- - -0.8 V
I
C
=-3A, I
B
=-150mA
*V
CE(sat)
- - -1.3 V
I
C
=-4A, I
B
=-200mA
*V
BE(sat)
- - -1.5 V
I
C
=-3A, I
B
=-150mA
*h
FE
1
100
- - -
V
CE
=-3V, I
C
=-500mA
*h
FE
2 120 - 390 -
V
CE
=-2V, I
C
=-1A
f
T
10
- -
MHz
V
CE
=-4V, I
C
=-1A, f=1MHz
*Pulse Test : Pulse Width
380s, Duty Cycle
2%


Classification of h
FE
2
Rank Q
R
Range 120~270
180~390


Ordering Information
Device Package Shipping
BTA1952E3 TO-220AB
Tube
CYStech Electronics Corp.

Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 3/4
BTA1952E3
CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Current Gain---
HFE
VCE=4V
Saturation Voltage vs Collector Current
1
10
100
1000
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
On Voltage vs Collector Current
100
1000
10000
0.1
1
10
100
1000
10000
Collector Current---IC(mA)
On Voltage---(mV)
VBE(on)@VCE=4V
Power Derating Curve
0
0.5
1
1.5
2
2.5
0
50
100
150
200
Ambient Temperature---TA()
Power Dissipation---PD(W)
Power Derating Curve
0
5
10
15
20
25
30
35
40
45
0
50
100
150
200
Case Temperature---TC()
Power Dissipation---PD(W)
CYStech Electronics Corp.

Spec. No. : C601E3-A
Issued Date : 2004.09.16
Revised Date :
Page No. : 4/4
BTA1952E3
CYStek Product Specification
TO-220AB Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.2197
0.2949 5.58 7.49 I
-
*
0.1508
-
*
3.83
B 0.3299
0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453
0.0547 1.15 1.39 N
-
*
0.1000
-
*
2.54
E 0.0138
0.0236 0.35 0.60 O 0.5000
0.5618 12.70 14.27
G 0.3803
0.4047 9.66 10.28 P 0.5701
0.6248 14.48 15.87
H -
*
0.6398
-
*
16.25
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A
B
E
G
I
K
M
O
P
3
2
1
C
N
H
D
4
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Marking:
A1952
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