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Datasheet: BTA1579S3 (Cystech Electonics Corp.)

General Purpose Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 1/4
BTA1579S3
CYStek Product Specification

General Purpose PNP Epitaxial Planar Transistor
BTA1579S3
Description
The BTP1579S3 is designed for high voltage amplification application.
High BV
CEO
, BV
CEO
= -120V
Complementary to BTC4102S3
.


Symbol Outline

Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
V
CBO
-120
V
Collector-Emitter Voltage
V
CEO
-120
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-50
mA
Power Dissipation
Pd
200
mW
Thermal Resistance, Junction to Ambient
R
JA
625
C/W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-323
BTA1579S3
BBase
CCollector
EEmitter
CYStech Electronics Corp.

Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 2/4
BTA1579S3
CYStek Product Specification

Characteristics
(Ta=25
C)
Symbol Min. Typ. Max. Unit
Test
Conditions
BV
CBO
-120 -
-
V I
C
=-50A
BV
CEO
-120 -
-
V I
C
=-1mA
BV
EBO
-5 - - V
I
E
=-50A
I
CBO
- - -500
nA
V
CB
=-100V
I
EBO
- - -500
nA
V
EB
=-4V
*V
CE(sat)
-
- -0.5 V
I
C
=-10mA, I
B
=-1mA
h
FE
56 - 390 -
V
CE
=-6V, I
C
=-2mA
f
T
-
140
-
MHz
V
CE
=-12V, I
C
=-2mA, f=30MHz
Cob - 3.2 - pF
V
CB
=-12V, f=1MHz
*Pulse Test: Pulse Width
380s, Duty Cycle
2%
Classification Of h
FE
Rank K P Q R
Range 56~120 82~180 120~270
180~390


















CYStech Electronics Corp.

Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 3/4
BTA1579S3
CYStek Product Specification

Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=5V
Saturation Voltage vs Collector Current
10
100
1000
0.1
1
10
100
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Frequency---FT(GHZ)
FT@VCE=12V
Power Derating Curve
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(mW)
CYStech Electronics Corp.

Spec. No. : C307S3
Issued Date : 2003.06.27
Revised Date :
Page No. : 4/4
BTA1579S3
CYStek Product Specification

SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256 - 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787 0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051 0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079 -
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079 -
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
2L
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