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Datasheet: BTA1577S3 (Cystech Electonics Corp.)

General Purpose Pnp Epitaxial Planar Transistor

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 1/4
BTA1577S3
CYStek Product Specification

General Purpose PNP Epitaxial Planar Transistor
BTA1577S3
Description
The BTA1577S3 is designed for use in driver stage of AF amplifier and general purpose
amplification.
Large IC . IC Max .= -0.6A
Low Vce(set). Edeal for low-Voltage operation
TYP.Vce(set) =0.2V at IC/IB = 300mA / 30mA
Complementary to BTC4097S3
.
Equivalent Circuit

Absolute Maximum Ratings
(Ta=25
C)
Parameter Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-32
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-0.6
A
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
-55~+150
C
SOT-323
BTA1577S3
BBase
CCollector
EEmitter
CYStech Electronics Corp.

Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 2/4
BTA1577S3
CYStek Product Specification

Characteristics
(Ta=25
C)
Symbol Min.
Typ.
Max.
Unit
Test
Conditions
BVCBO -40 -101 -
V IC=-10uA
BVCEO -32 -62 -
V IC=-1mA
BVEBO -5 -8.9 -
V IE=-100uA
ICBO - -0.03
-1.0
uA
VCB=-20V
IEBO - 0 -1.0
uA
VEB=-4V
*VCE(sat) - -0.25 -0.5 V IC=-100mA,
IB=-10mA
*hFE 82 212 390
VCE=-3V,
IC=-100mA
fT - 200 - MHz
VCE=-10V,
IC=-1mA,
f=100MHz
Cob - 7 - pF
VCB=-10V,
f=1MHz
*Pulse Test: Pulse Width
380us, Duty Cycle2%
Classification Of hFE1
Rank P Q R
Range 82~180 120~270
180~390


















CYStech Electronics Corp.

Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 3/4
BTA1577S3
CYStek Product Specification

Characteristic Curves
Current Gain vs Collector Current
10
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Current Gain---
HFE
HFE@VCE=3V
Saturation Voltage vs Collector Current
10
100
1000
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Saturation Voltage vs Collector Current
100
1000
0.1
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VBE(SAT)@IC=10IB
Cutoff Frequency vs Collector Current
0.1
1
1
10
100
Collector Current---IC(mA)
Cutoff Fre
que
nc
y-FT(G
H
Z
)
FT@VCE=5V
PD - Ta
0
50
100
150
200
250
0
50
100
150
200
Ambient Temperature --- Ta( )
Power Dissipation---PD(m
W
)
CYStech Electronics Corp.

Spec. No. : C305S3
Issued Date : 2002.06.11
Revised Date : 2002.11.01
Page No. : 4/4
BTA1577S3
CYStek Product Specification
SOT-323 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A
0.0315
0.0433
0.80
1.10
e1
0.0256
- 0.65 -
A1 0.0000 0.0039 0.00 0.10 He 0.0787
0.0886 2.00 2.25
bp 0.0118 0.0157 0.30 0.40 Lp 0.0059
0.0177 0.15 0.45
C 0.0039
0.0098 0.10 0.25 Q 0.0051
0.0091 0.13 0.23
D 0.0709
0.0866 1.80 2.20 v 0.0079
-
0.2
-
E 0.0453
0.0531 1.15 1.35 w 0.0079
-
0.2
-
e 0.0512 -
1.3
-
- -
10
0
Notes:
1.Dimension and tolerance based on our Spec. dated Feb. 27.002.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
He
E
A
A1
Q
Lp
e1
e
bp
1
2
3
D
W
B
v
A
Z
detail Z
A
C
0
1
2
scale
mm
Style: Pin 1.Base 2.Emitter 3.Collector
3-Lead SOT-323 Pastic
Surface Mounted Package
CYStek Package Code: S3
Marking:
TE
2T
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