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Datasheet: BAW56N3 (Cystech Electonics Corp.)

High -speed Double Diode

 

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Cystech Electonics Corp.
CYStech Electronics Corp.

Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date
Page No. : 1/4
BAW56N3
CYStek Product Specification
High speed double diode
BAW56N3
Description
The BAW56N3 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-23 plastic SMD package.
Equivalent Circuit
Features
Small plastic SMD package
High switching speed: max. 4ns
Continuous reverse voltage: max. 75V
Repetitive peak reverse voltage: max. 85V
Repetitive peak forward current: max. 450mA.
Applications
High-speed switching in thick and thin-film circuits.





SOT-23
BAW56N3
1
2
3
1Cathode
2Cathode
3Common Anode
Cathode
Cathode
Common Anode
CYStech Electronics Corp.

Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date
Page No. : 2/4
BAW56N3
CYStek Product Specification
Absolute Maximum Ratings
@T
A
=25
Parameters Symbol
Min
Max
Unit
Repetitive peak reverse voltage
V
RRM
- 85
V
Continuous reverse voltage
V
R
- 75
V
Continuous forward current(single diode loaded)
-
215
Continuous forward current(double diode loaded)
I
F
- 125
mA
Repetitive peak forward current
I
FRM
450
mA
Non-repetitive peak forward current
@square wave, Tj=125 prior to surge t=1s
t=1ms
t=1s
I
FSM
-
-
-
4
1
0.5
A
A
A
Total power dissipation(
Note 1
) Ptot
250
mW
Junction Temperature
T
j
-
150
C
Storage Temperature
T
stg
-65
+150
C
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics
@ Tj=25 unless otherwise specified
Parameters Symbol Conditions Min
Typ.
Max
Unit
Forward voltage
V
F
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
- -
715
855
1
1.25
mV
mV
V
V
Reverse current
I
R
V
R
=25V
V
R
=75V
V
R
=25V,Tj=150
V
R
=75V,Tj=150
- -
30
1
30
50
nA
A
A
A
Diode capacitance
Cd
V
R
=0V, f=1MHz
-
-
2
pF
Reverse recovery time
trr
when switched from I
F
=10mA to
I
R
=10mA,R
L
=100, measured
at I
R
=1mA
- - 4 ns
Forward recovery voltage
Vfr
when switched from I
F
=10mA
tr=20ns
- -
1.75
V
Thermal Characteristics
Symbol Parameter Conditions
Value
Unit
Rth,j-tp
thermal resistance from junction to tie-point
360
/W
Rth, j-a
thermal resistance from junction to ambient
Note 1
500
/W
Note 1: Device mounted on an FR-4 PCB.


CYStech Electronics Corp.

Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date
Page No. : 3/4
BAW56N3
CYStek Product Specification
Characteristic Curves
Forward Current vs Ambient Temperature
0
25
50
75
100
125
150
175
200
225
250
0
50
100
150
200
Ambient Temperature---Ta()
Forward Current---IF(mA)
single diode loaded
double diode loaded
Forward Current vs Forward Voltage
0
25
50
75
100
125
150
175
200
225
250
275
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Forward Voltage---VF(V)
Forward Current---IF(m
A)
Non-repetitive peak forward
current vs pulse duration
0.1
1
10
100
1
10
100
1000
10000
Pulse Duration---tp(s)
Non-repetitive peak forward
current---IFSM(A)
Diode Capacitance vs Reverse Voltage
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
2
4
6
8
10
12
14
16
Reverse Voltage---VR(V)
Diode Capacitance---CD(pF)


















CYStech Electronics Corp.

Spec. No. : C303N3A
Issued Date : 2003.04.12
Revised Date
Page No. : 4/4
BAW56N3
CYStek Product Specification
SOT-23 Dimension
*: Typical
Inches Millimeters
Inches Millimeters
DIM
Min. Max. Min. Max.
DIM
Min. Max. Min. Max.
A 0.1102
0.1204 2.80 3.04 J 0.0034
0.0070
0.085 0.177
B 0.0472
0.0630 1.20 1.60 K 0.0128 0.0266 0.32 0.67
C 0.0335
0.0512 0.89 1.30 L 0.0335 0.0453 0.85 1.15
D 0.0118
0.0197 0.30 0.50 S 0.0830
0.1083 2.10 2.75
G 0.0669
0.0910 1.70 2.30 V 0.0098 0.0256 0.25 0.65
H
0.0005
0.0040
0.013
0.10
Notes:
1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.






H
J
K
D
A
L
G
V
C
B
3
2
1
S
Style: Pin 1.Cathode 2.Cathode
3.Common Anode
Marking:
TE
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
A1
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