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Datasheet: C470RT290-0105 (Cree, Inc.)

 

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Cree, Inc.
CPR3BU Rev. B
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
RazerThinTM LEDs
CxxxRT290-S0100

Features Applications
Thin 95m Chip
Reduced Forward Voltage
2.9V Typical at 5mA
High Performance
Single Wire Bond Structure
Class II ESD Rating
Mobile Phone Key Pads
White LEDs
Blue LEDs
Green LEDs
Cellular Phone LCD Backlighting
Digital Camera Flash For Mobile Appliance
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Description
Cree's RazerThinTM LEDs are a new generation of solid state LED emitters which combine highly
efficient InGaN materials with Cree's proprietary SiC substrate to deliver superior price performance for
high intensity blue and green LEDs. These vertically structured LED chips are approximately 95
microns in height and require a low forward voltage. Cree's RazerThin series chips have the ability to
withstand 1000V ESD. Applications for RazerThin include next generation keypad backlighting where
sub-miniaturization and thinner form factors are required.
CxxxRT290-S0100 Chip Diagram









Top View
h = 95
m
270 x 270 m
Mesa (junction)
240 x 240 m
Gold Bond Pad
110 m Diameter
Backside
Metallization
Bottom View
Side View
SiC Substrate
GSiC LED Chip
GaN
Anode (+)
Cathode (-)
CPR3BU Rev. B
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
RazerThinTM LEDs
CxxxRT290-S0100






Maximum Ratings at T
A
= 25C
Notes 1&3
CxxxRT290-S0100
DC Forward Current
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-40C to +85C
Storage Temperature Range
-40C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 5 mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Min Typ
Note 4
Max
Max
C460RT290-S0100
C470RT290-S0100
2.7 2.9
3.1
10
C527RT290-S0100
2.6 2.9
3.2
10
Mechanical Specifications
CxxxRT290-S0100
Description Dimension
Tolerance
P-N Junction Area (m)
240 x 240
25
Top Area (m)
270 x 270
25
Bottom Area (m)
270 x 270
25
Chip Thickness (m)
95
15
Au Bond Pad Diameter (m)
110
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width (m)
20
10
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol
OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1
3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G SiC die but by the effect of
the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package;
junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325C (< 5 seconds).

2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test
(RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other
assurances regarding the ability of Products to withstand ESD.

3. All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when
assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents.
Typical values given are the average values expected by Seller in large quantities and are provided for information only.
Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps
in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.

4. For reference only, typical V
f
for C460, C470, and C527 is 3.2V and at 20mA.
CPR3BU Rev. B
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
RazerThinTM LEDs
CxxxRT290-S0100

Standard Bins for RT290:
All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux values
shown and specified are at If = 20mA (see Note 1) and all dominant wavelength values shown and
specified are at If = 5mA (see Note 2).









Notes:
1) For reference only, radiant flux values at If = 5mA are typically 29% and 32% of the corresponding radiant flux at If =
20mA for 455-475nm range and 520-535nm range, respectively.

2) For reference only, wavelength values at If = 20mA are typically 2nm less and 7nm less than the corresponding
wavelength values at If=5mA for 455-475nm range and 520-535nm range, respectively.
C460RT290-S0100
465nm
C470RT290-S0100
475nm
6.0mW
3.5mW
C527RT290-S0100
1.7mW
Dominant Wavelength
C527RT290-0105
C527RT290-0106
535nm
525nm
C527RT290-0101
C527RT290-0104
520nm
530nm
467.5nm
C460RT290-0108
C470RT290-0108
C460RT290-0103
C460RT290-0105
C460RT290-0106
C460RT290-0107
C470RT290-0106
470nm
472.5nm
C527RT290-0102
C527RT290-0103
Dominant Wavelength
Sorted Die Kits may contain any or all
bins shown to the left.
Sorted Die Kits may contain any or all
bins shown to the left.
Sorted Die Kits may contain any or all
bins shown to the left.
C460RT290-0104
462.5nm
C470RT290-0102
C470RT290-0103
C470RT290-0104
457.5nm
C470RT290-0107
Dominant Wavelength
C460RT290-0101
C460RT290-0102
460nm
7.2mW
3.8mW
455nm
10.4mW
Radiant Flux
11.1mW
Radiant Flux
6.7mW
3.4mW
Radiant Flux
465nm
C470RT290-0101
C470RT290-0105
CPR3BU Rev. B
Cree, Inc. 2003 All Rights Reserved.
G
SiC
Technology
RazerThinTM LEDs
CxxxRT290-S0100






Characteristic Curves:
These are representative measurements for the RazerThin products. Actual curves will vary slightly for
the various radiant flux and dominant wavelength bins.
Relative Intensity vs W avelength - All Products
0%
20%
40%
60%
80%
100%
W avelength (nm)
Re
la
tiv
e
In
te
n
s
ity
(%
)
500
470 nm
527 nm
Relative Intensity vs Forward Current
0
20
40
60
80
100
120
140
0
5
10
15
20
25
30
If (mA)
%
In
te
n
s
ity
Forward Current vs Forward Voltage
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Volts
If (mA
)
Wavelength Shift vs Forward Current
-12.00
-10.00
-8.00
-6.00
-4.00
-2.00
0.00
2.00
4.00
6.00
8.00
10.00
0
5
10
15
20
25
30
If (mA)
Sh
ift (
n
m)
527nm
470nm
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