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Datasheet: C470CB230-S0100 (Cree, Inc.)

 

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Cree, Inc.
G
SiC
Technology
SuperBrightTM LEDs
Cxxx-CB230-S0100

Features Applications
High Performance
1.0 - 4.0mW (460nm) Deep Blue
1.0 3.8mW (470nm) Blue
0.5 1.8mW (527nm) Green
Sorted to Wavelength and Power Bins

Single Wire Bond Structure

Class II ESD Rating
Outdoor LED Video Displays
White LEDs
Automotive Dashboard Lighting
Cellular Phone Backlighting
Audio Product Display Lighting
Entertainment and Amusement
Description
Cree's CBTM series of SuperBrightTM LEDs combine highly efficient InGaN materials with Cree's
proprietary GSiC substrate to deliver excellent price performance for high intensity blue and green
LEDs. These LED chips have an industry-standard vertical chip structure, which requires only a single
wire bond connection. Sorted Die Kits provide die sheets conveniently sorted into wavelength and radiant
flux bins. Cree's CB series chips are tested for conformity to optical and electrical specifications and the
ability to withstand 1000V ESD. These LEDs are useful in a broad range of applications such as outdoor
and indoor full motion LED video signs, transportation signaling and white LEDs, yet can also be used in
high volume applications such as LCD backlighting. Cree's CB series chips are compatible with most
radial and SMT LED assembly processes.
Cxxx-CB230-S0100 Chip Diagram
Topside View
GSiC LED Chip
200 x 200 m
Mesa (junction)
175 x 175 m
Gold Bond Pad
112m Diameter
Anode (+)
Die Cross Section
t = 250 m
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
CPR3AU Rev. C
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
SuperBrightTM LEDs
Cxxx-CB230-S0100
Maximum Ratings at T
A
= 25C
Notes 1&3
Cxxx-CB230-S0100
DC Forward Current
15 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
35 mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-20C to +80C
Storage Temperature Range
-30C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000
V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2
Typical Electrical/Optical Characteristics at T
A
= 25C, If = 10mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Peak Wavelength
(
p,
nm)
Halfwidth
(
D,
nm)
Optical Rise Time
(
, ns)
Typ
Max
Max Typ Typ Typ
C460CB230-S0100
3.3 3.7
10
458
26
30
C470CB230-S0100
3.3 3.7
10
468
26
30
C527CB230-S0100
3.3 3.7
10
523
36
30
Mechanical Specifications
Cxxx-CB230-S0100
Description Dimension
Tolerance
P-N Junction Area (m)
175 x 175
25
Top Area (m)
200 x 200
25
Bottom Area (m)
200 x 200
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
112
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width (m)
19.8
-5,+10

Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization.
Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED junction temperature on the
package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to
determine limitations. Assembly processing temperature must not exceed 325C (<5 seconds).

2) Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET). The
RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD classification of
Class II is based on sample testing according to MIL-STD 883E.

3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 10 mA
within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the
manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000
epoxy). Dominant wavelength measurements taken using Illuminance E.

4) Specifications are subject to change without notice.
CPR3AU Rev. C
2000-2003 Cree, Inc. All Rights Reserved.
CPR3AU Rev. C
2000-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
SuperBrightTM LEDs
Cxxx-CB230-S0100

Standard Bins:
LED chips are sorted to the radiant flux and dominant wavelength bins. A sorted die sheet contains die from only one bin.
Sorted die kit (Cxxx-CB230-S0100) orders may be filled with any or all bins (Cxxx-CB230-01xx) contained in the kit.
Kit Part Number
C460CB230-S0100
C470CB230-S0100
C527CB230-S0100
C527CB230-0101
C527CB230-0102
C527CB230-0103
C460CB230-0105
C460CB230-0106
C460CB230-0102
C527CB230-0104
C527CB230-0105
C470CB230-0106
C470CB230-0104
C470CB230-0102
C460CB230-0101
4.0mW
3.8mW
3.0mW
460nm
2.0mW
465nm
1.0mW
C460CB230-0103
C460CB230-0104
1.0mW
455nm
2.7mW
1.8mW
465nm
1.7mW
C470CB230-0105
C470CB230-0103
C470CB230-0101
535nm
470nm
475nm
520nm
525nm
530nm
0.5mW
0.9mW
C527CB230-0106
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