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Datasheet: C460MB290-0103 (Cree, Inc.)

 

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Cree, Inc.
CPR3AP Rev. F
2001-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
CxxxMB290-S0100


Features Applications
MegaBright LED Performance
8.0mW min (460nm) Deep Blue
7.5mW min (470nm) Blue
6.0mW min (505nm) Traffic Green
5.0mW min (527nm) Green
Single Wire Bond Structure
Class II ESD Rating
Outdoor LED Video Displays
Automotive Dashboard Lighting
White LEDs
Backlighting
Traffic Signals
Description
Cree's MBTM series of MegaBright
LEDs combine highly efficient InGaN materials with Cree's
proprietary G
SiC substrate to deliver superior price/performance for high intensity blue and green
LEDs. These LED chips have a geometrically enhanced vertical chip structure to maximize light
extraction efficiency, and require only a single wire bond connection. Sorted Die Kits provide die
sheets conveniently sorted into wavelength and radiant flux bins. Cree's MB series chips are tested for
conformity to optical and electrical specifications and the ability to withstand 1000V ESD. These LEDs
are useful in a broad range of applications such as outdoor full motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high volume applications such as LCD backlighting.
Cree's MB series chips are compatible with most radial and SMT LED assembly processes.
CxxxMB290-S0100 Chip Diagram

Topside View
G
SiC LED Chip
300 x 300 m
Mesa (junction)
240 x 240 m
Gold Bond Pad
114 m Diameter
Anode (+)
h = 250 m
Backside
Metallization
Cathode (-)
InGaN
SiC Substrate
Bottom View
Die Cross Section
CPR3AP Rev. F
2001-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
CxxxMB290-S0100


Maximum Ratings at T
A
= 25C
Notes 1&3
CxxxMB290-S0100
DC Forward Current
30mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
100mA
LED Junction Temperature
125C
Reverse Voltage
5 V
Operating Temperature Range
-40C to +100C
Storage Temperature Range
-40C to +100C
Electrostatic Discharge Threshold (HBM)
Note 2
1000
V
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Class
2

Typical Electrical/Optical Characteristics at T
A
= 25C, If = 20mA
Note 3
Part Number
Forward Voltage
(V
f,
V)
Reverse Current
[I(Vr=5V), A]
Peak Wavelength
(
p,
nm)
Full Width Half Max
(
D,
nm)
Optical Rise Time
(
, ns)
Min
Typ
Max
Max
Typ
Typ
Typ
C460MB290-S0100 3.0 3.5 3.8
10
458
26
30
C470
MB290-S0100 3.0 3.5 3.8
10
468
26
30
C505
MB290-S0100 3.0 3.8 4.0
10
502
30
30
C527
MB290-S0100 3.0 3.8 4.0
10
518
35
30
Mechanical Specifications
CxxxMB290-S0100
Description Dimension
Tolerance
P-N Junction Area (m)
240 x 240
25
Top Area (m)
300 x 300
25
Bottom Area (m)
200 x 200
25
Chip Thickness (m)
250
25
Au Bond Pad Diameter (m)
114
20
Au Bond Pad Thickness (m)
1.2
0.5
Back Contact Metal Width (m)
20
-5, +10
Notes:
1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for
characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die but by the effect of the LED
junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be
characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds).

2)
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche energy test (RAET).
The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is performed on each die. The ESD
classification of Class II is based on sample testing according to MIL-STD 883E.

3)
All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20
mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values
expected by the manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1 3/4 packages
(with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.
4)
Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed 80
m.
5)
Specifications are subject to change without notice.
CPR3AP Rev. F
2001-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
CxxxMB290-S0100
Standard Bins for CxxxMB290-S0100:
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxMB290-S0100) orders may be filled with any or all bins (CxxxMB290-010x) contained in the
kit.
12.0mW
10.0mW
8.0mW
12.0mW
10.0mW
7.5mW
7.0mW
6.0mW
6.0mW
5.0mW
C505MB290-0101
C470MB290-0107
C527MB290-0103
C470MB290-0101
C470MB290-0102
C505MB290-0103
C505MB290-0104
470nm
472nm
510nm
475nm
C470MB290-0106
Radiant Flux
Radiant Flux
C460MB290-S0100
C460MB290-0105
C460MB290-0106
C460MB290-0104
C460MB290-0103
C460MB290-0101
C460MB290-0102
C527MB290-0102
465nm
455nm
465nm
460nm
C470MB290-0108
C470MB290-0109
C470MB290-0104
C470MB290-0105
Dominant Wavelength
Dominant Wavelength
Dominant Wavelength
Dominant Wavelength
C470MB290-S0100
C505MB290-S0100
C527MB290-S0100
530nm
520nm
525nm
535nm
C505MB290-0102
Radiant Flux
Radiant Flux
500nm
505nm
C527MB290-0104
C527MB290-0105
C527MB290-0106
C527MB290-0101

CPR3AP Rev. F
2001-2003 Cree, Inc. All Rights Reserved.
G
SiC
Technology
MegaBright
LEDs
CxxxMB290-S0100



Characteristic Curves





Relative Intensity vs Forward Current - All Products
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
0
5
10
15
20
25
30
If (mA)
%
Forward Current vs Forward Voltage - All Products
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vf (V)
If (mA)
Wavelength Shift vs Forward Current - All Products
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0
5
10
15
20
25
30
If (mA)
S
h
i
ft (nm)
527nm
505nm
470nm
Relative Intensity vs Wavelength - All Products
0%
20%
40%
60%
80%
100%
W avelength (nm)
Re
la
tiv
e
Inte
ns
ity
(%
)
500
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