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Datasheet: NESG2031M16-T3-A (California Eastern Labs)

High Frequency Transistor

 

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California Eastern Labs
NESG2031M16
NEC's NPN SiGe
HIGH FREQUENCY TRANSISTOR
DESCRIPTION
NEC's NESG2031M16 is fabricated using NECs high voltage
Silicon Germanium process (UHS2-HV), and is designed for
a wide range of applications including low noise amplifiers,
medium power amplifiers, and oscillators.
California Eastern Laboratories
HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY
V
CEO
= 5 V (Absolute Maximum)
LOW NOISE FIGURE:
NF
= 0.8 dBm at 2 GHz
NF
= 1.3 dBm at 5.2 GHz
HIGH MAXIMUM STABLE GAIN:
MSG
= 21.5 dB at 2 GHz
LOW PROFILE M16 PACKAGE:
6-pin lead-less minimold
FEATURES
Notes:
1. MSG =
2. Collector to base capacitance when the emitter pin is grounded.
3. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
PART NUMBER
NESG2031M16
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
dB
1.3
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 5.2 GHz,
dB
10.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
NF
Noise Figure at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
dB
0.8
1.1
Z
S
= Z
SOPT
, ZL = Z
LOPT
G
a
Associated Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
dB
15.0
17.0
Z
S
= Z
SOPT
, ZL = Z
LOPT
MSG
Maximum Stable Gain
1
at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
dB
19.0
21.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
dB
16.0
18.0
P
1dB
Output Power at 1dB Compression Point at
dBm
13
V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz
OIP
3
Output 3rd Order Intercept Point at V
CE
= 3 V, I
CQ
= 20 mA, f = 2 GHz dBm
23
f
T
Gain Bandwidth Product at V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
GHz
20
25
C
re
Reverse Transfer Capacitance
2
at V
CB
= 2 V, I
E
= 0 mA, f = 1 GHz
pF
0.15
0.25
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
100
h
FE
DC Current Gain
3
at V
CE
= 2 V, I
C
= 5 mA
130
190
260
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
RF
DC
S
21
S
12
M16
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on 1.08 cm
2
x 1.0 mm (t) glass epoxy PCB.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
13.0
V
CEO
Collector to Emitter Voltage
V
5.0
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
35
P
T
2
Total Power Dissipation
mW
175
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
NESG2031M16
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M16
6-PIN LEAD-LESS MINIMOLD
0.50.05
0.125
+0.1
-0.0
5
0.4
0.4
0.8
0.150.05
1.2
+0.07
-0.0
5
0.8
+0.07
-0.05
1.00.05
1
2
3
6
5
4
zF
PIN CONNECTIONS
1. Collector
2. Emitter
3. Emitter
4. Base
5. Emitter
6. Emitter
ORDERING INFORMATION
PART NUMBER
QUANTITY
SUPPLYING FORM
NESG2031M16-T3-A 10 K pcs
reel
Pin 1 (Collector), Pin 6
(Emitter) face the perfora-
tion side of the tape
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
11/13/2003
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
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< 1000 PPM
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(*)
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< 1000 PPM
Not Detected
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< 100 PPM
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< 1000 PPM
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< 1000 PPM
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< 1000 PPM
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