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Datasheet: NE685M33-A (California Eastern Labs)

NECs NPN SILICON TRANSISTOR

 

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California Eastern Labs
NE685M33
NEC's NPN SILICON TRANSISTOR
California Eastern Laboratories
LOW NOISE:
NF = 1.5 dB TYP. @ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz
INSERTION POWER GAIN:
|S
21e
|
2
= 11 dB TYP. @ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
FEATURES
DATA SHEET
ORDERING INFORMATION
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(T
A
=+25C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector to Base Voltage
V
CBO
9.0
V
Collector to Emitter Voltage
V
CEO
6.0
V
Emitter to Base Voltage
V
EBO
2.0
V
Collector Current
I
C
30
mA
Total Power Dissipation
P
tot
Note
130
mW
Junction Temperature
T
j
150
C
Storage Temperature
T
stg
-
65 to +150
C
Note Mounted on 1.08 cm
2
1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
PART NUMBER
QUANTITY
SUPPLYING FORM
NE685M33-A
50 pcs (Non reel)
8 mm wide embossed taping
Pin 2 (Base) face the perforation side of the tape
NE685M33-T3-A
10 kpcs/reel
NE685M33
ELECTRICAL CHARACTERISTICS
(T
A
=+25C)
Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
RANK
FB
Marking
Y2
h
FE
Value
75 to 150
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC Characteristics
Collector Cut-off Current
I
CBO
V
CB
= 5 V, I
E
= 0 mA
100
nA
Emitter Cut-off Current
I
EBO
V
EB
= 1 V, I
C
= 0 mA
100
nA
DC Current Gain
h
FE
Note 1
V
CE
= 3 V, I
C
= 10 mA
75
110
150
RF Characteristics
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
10
12
GHz
Insertion Power Gain
|S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
7
11
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
1.5
2.5
dB
Reverse Transfer Capacitance
C
re
Note 2
V
CB
= 3 V, I
C
= 0 mA, f = 1 MHz
0.4
0.7
pF
NE685M33
TYPICAL CHARACTERISTICS
(T
A
=+25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
V
CE
= 1 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
V
CE
= 3V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
V
CE
= 2 V
100
10
1
0.01
0.001
0.1
0.0001
0.7
0.5
0.6
0.4
0.8
0.9
1.0
f = 1 MHz
0.5
0.2
0.1
0
2
4
6
8
10
250
200
150
100
50
0
25
50
75
100
125
150
130
0.4
0.3
40
10
20
30
0
2
4
6
8
I
B
= 50 A
200 A
300 A
350 A
400 A
150 A
100 A
35
25
15
5
250 A
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
T
otal Power Dissipation
P
to
t
(mW)
Ambient Temperature T
A
(C)
Mounted on Glass Epoxy PCB
(1.08 cm
2
1.0 mm (t) )
Reverse T
ransfer Capacitance
C
re
(p
F)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Collector Current
I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
NE685M33
TYPICAL CHARACTERISTICS
(T
A
=+25C, unless otherwise specified)
Remark The graphs indicate nominal characteristics.
1000
100
10
1
0.1
10
100
V
CE
= 1 V
1000
100
10
1
0.1
10
100
1000
100
10
1
0.1
10
100
V
CE
= 2 V
V
CE
= 3 V
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC Current Gain
h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
NE685M33
PACKAGE DIMENSIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33)
(UNIT: mm)
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
A Business Partner of NEC Compound Semiconductor Devices, Ltd.
06/22/2004
0.15
0.57
0.285
0.125
0.440.05
1
2
3
(Bottom View)
0.15
0.840.05
0.125
0.15
0.640.05
0.1
1
0.4
1. Emitter
2. Base
3. Collector
PIN CONNECTIONS
Y

2
NE package code: M33
SOT number: -
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